Hitachi, Ltd.

Opnext Japan, Inc.

Olympus Corporation

Olympus Optical Company, Ltd.

Other

Oclaro Japan, Inc.

Masahiro Aoki

Kazuhisa Uomi

Tomonobu Tsuchiya

Hiroshi Sato

Makoto Suzuki

Makoto Takahashi

Takayuki Tsutsui

Toshiki Sugawara

Hideo Arimoto

Takeshi Kitatani

Masaaki Komori

Tsuyoshi Taniwatari

Shinichi Saito

Tatemi Ido

Atsushi Nakamura

Koichiro Adachi

Tatsuo Nakata

Makoto Okai

Kazunori Shinoda

Kazuhiko Hosomi

Misuzu Sagawa

Shigeki Makino

Akira Taike

Tsurugi Sudoh

Takao Watanabe

Hiroyuki Uchiyama

Takeshi Shimano

Satoshi Aoki

Takahiro Kurokawa

Takeshi Kato

Kenichi Tanaka

Shinya Sasaki

Noriyuki Sakuma

Nobuyuki Sugii

Yoshitada Oshida

Koichi Watanabe

Naoki Chinone

Yasuo Sasaki

Shinji Sakano

Atsuhiro Tsuchiya

Shinji Tsuji

Masaharu Sakamoto

Yasunobu Matsuoka

Noritsugu Takahashi

Hirohisa Sano

Tsukuru Ohtoshi

Atsushi Takai

Katsuya Oda

Yasunari Obuchi

Mitsugu Sakai

Junichiro Shimizu

Koichi Karaki

Junji Shigeta

Minoru Fujita

Tatsuo Teraoka

Kazuhiko Naoe

Satoru Kikuchi

Takafumi Taniguchi

Jiro Yamamoto

Toshihiko Fukamachi

Akihiko Yoshikawa

Takashi Shiota

Katsuhiko Kuboki

Chikara Abe

Hiroyuki Gomyo

Yae Okuno

Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.

Semiconductor optical device

In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.

Surface emitting laser module and vertical illuminated photodiode module

An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Light-emitting device, light-receiving device and method of manufacturing the same

A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.

Multi-wavelength light emitting device

A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.

Wavelength tunable filter and wavelength tunable laser module

In an information storage device in which small partitions for storing information are three-dimensionally placed inside a solid, the invention aims at long-period storage, robustness, and rapid information reading. Accordingly, the stored three-dimensional information is divided into two-dimensional data for each layer, and two-dimensional inverse Fourier transform is previously applied for the two-dimensional data. The two-dimensional data is recorded in each layer in a Z direction inside a storage medium which is solid. When the information is reproduced, electromagnetic waves are irradiated to a storage area MA as gradually rotating the storage area MA around a z axis, and projection images of all layers during the rotation are obtained from response. By applying one-dimensional Fourier transform for a plurality of projection images obtained as described above, the recorded original three-dimensional information is rapidly reproduced.

Information processor device and storage medium

A microscope includes an illuminating unit that includes an excitation light source emitting an excitation light, and a phosphor receiving the excitation light and emitting illumination light in a specific wavelength range. The illuminating unit illuminates a specimen with the illumination light. The microscope also includes an observation unit for observing the specimen illuminated by the illuminating unit.

Microscope and lamphouse

An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.

Optical transmitter/receiver module

A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45&#xb0; mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45&#xb0; mirror at an angle of 90&#xb0; and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.

Semiconductor laser apparatus

It is an object of the present invention to realize a low cost laser light source capable of emitting several mW optical power while the operation current is reduced. In particular, the present invention concerns a 1.3 &#x3bc;m wavelength band laser device suitable for several to several ten km short distance fiber optic transmission and also a less power consuming optical communication module in which such a laser is preferably mounted. As a laser structure which eliminates the necessity of adding an optical isolator by providing improved immunity to reflected light while lowering the operation current for less power consumption and not lowering the response speed, a short cavity laser which operates in multiple longitudinal modes is introduced. Especially, an angled mirror structure is formed at the laser's emitting edge to change the optical output direction so that the light is emitted from the top or bottom of the substrate.

Semiconductor laser diode and optical module employing the same

There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface () and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.

Semiconductor device

The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output characteristics of a vertical cavity surface light emitting laser. A distributed Bragg reflector laser is constructed in the form of a semiconductor laser having a multilayer structure formed on a predetermined semiconductor substrate. The multilayer structure includes an active region for emitting a laser beam, and a distributed Bragg reflector layer. A length of the active region falls within the range of 10 to 100 &#x3bc;m, and a laser light beam is generated in accordance with ON/OFF of current injection to the active region.

Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser

An image processing apparatus includes an area specifying unit that specifies a closed area emitting fluorescence in a fluorescence image as a cell area in a cell population including a number of dispersed cells. The fluorescence image is generated from fluorescence emitted by the cell population irradiated with a scanning laser beam. The apparatus also includes a nucleus data removing unit that removes data corresponding to a nucleus in the cell area; an overlapping cell specifying unit that specifies an overlapping cell area where cells overlap, based on a fluorescence intensity of a cytoplasm portion corresponding to an image where the data corresponding to the nucleus is removed; and an analyzed image generating unit that generates an analyzed image where data of the overlapping cell area is removed from the fluorescence image.

Image processing apparatus which removes image data of overlapping cells

In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.

Semiconductor laser diode

Growing community of inventors

Kokubunji, Japan

Masahiro Aoki