Oki Electric Industry Co., Ltd.

Ihi Corporation

Agency of Industrial Science and Technology

Ministry of International Trade & Industry

Nec Engineering, Ltd.

Masahiro Akiyama

Yasushi Kawakami

Hideaki Horikawa

Makoto Shikata

Takashi Nakagawa

Noriko Sato

Yoshihiro Akiyama

Koutarou Tanaka

Bun Kobayashi

Yosuke Akamatsu

Noboru Kusama

Koutaro Tanaka

Katsuya Kitada

Katuzo Kaminishi

A centrifugal blower includes a motor part having a rotor provided on a rotating shaft of an impeller, a coil provided around the rotor, and a motor housing that accommodates a coil, an inverter part having an inverter unit that supplies drive power to the motor part, and an inverter housing connected to the motor housing and configured to accommodate the inverter unit, and a cooling fan that is provided on the rotating shaft, rotates with the impeller and allows cooling air to flow through the inverter housing and the motor housing in order, wherein the inverter unit is disposed to be arranged with respect to the coil in a direction of a rotation axis of the rotor.

Fluid machine

In response to changes in an input binary digital signal, a 3rd order cosine pulse waveform, which, when it is changed in the increasing direction, has '0' level in a first period of T/12 (T corresponding to one-half cycle of the binary digital signal), is changed as a waveform of (h/2)(1+cos(3&#x3c0;t/T)+&#x3c0;/4) in the next period of 4T/12 (&#x2212;5T/12&#x2266;t&#x2266;&#x2212;T/12) and has an h (constant) level in the remaining period of T/12, and when it is changed in the reducing direction, has the h level in the first period of T/12, is changed as a waveform of (h/2)(1+cos(3&#x3c0;t/T)&#x2212;&#x3c0;/4) in the next period of 4T/12 (T/12&#x2266;t&#x2266;5T/12) and also has '0' level in the remaining period of T/12. By using this pulse wave, a flat part is generated in a time width of T/12 with respect to a judgment point. It is thus possible to improve the immunity to the effects of digital signal jitter, obtain change judgment with a sole single pulse and reduce the circuit scale and the power consumption.

Phase modulator

The present invention provides a modulator which has a high degree of modulation and a good modulation sensitivity. The modulator comprises an oscillating circuit and a resonator portion, and this resonator portion comprises a reflective circuit board, a coupling line which is disposed on the reflective circuit board, a coupled load which is coupled to one end of the coupling line, a dielectric resonator which is disposed on the reflective circuit board and which is magnetically coupled with the coupling line, a window portion which is formed in the undersurface of the reflective circuit board directly beneath the coupling line, a waveguide resonator which is disposed on the undersurface of the reflective circuit board in the area that includes the window portion, and which is magnetically coupled with the coupling line, and a varactor diode which is inserted between the opposite signal conductor surfaces and of the waveguide resonator, and to which the input modulating signal terminal is connected. The other end of the coupling line constitute the output port of the resonator portion, and is connected to the input port of the oscillating circuit, and the end portion of the coupled load that is not coupled to the abovementioned coupling line is grounded.

Modulator and oscillator for microwave and milliwave use

In a frequency-dividing circuit for producing an output having a frequency half that of its input, a pair of terminals of a latch circuit are connected to input terminals of a pair of amplify/delay means, and are also connected to receive through a pair of transistors, the outputs of the amplify/delay means. A single-phase input signal is input to the control electrodes of the transistors to turn on and off the transistors. When the transistors are turned from off to on, the output states of the amplify/delay means are transferred through the transistors to invert the latch circuit, and the states of complementary terminals of the latch circuits are in turn transferred through the amplify/delay means to invert the output states of the outputs of the amplify/delay means. When the transistors are turned from on to off, no change occurs in the states of the circuit. In this way, the states of the circuit are inverted each time the transistors are turned from off to on. A frequency-divided output can therefore be derived at one of the outputs of the first and second amplify/delay means. Either one or both of the first and second inverters may be replaced by a NAND gate or a NOR gate for permitting reset of the circuit.

Frequency-dividing circuit

An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAs has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.

InP semiconductor thin film on Si

An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAS has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.

Process for fabricating an INP semiconductor thin film on silicon

A flip-flop circuit comprises two basic flip-flop circuits, four field effect transistors, and four amplifiers. The two basic flip-flop circuits respectively composed of a first and a second inverter circuits, and an output terminal of the first inverter circuit is connected to an input terminal of the second inverter circuit and an output terminal of the second inverter circuit is connected to the input terminal of the first inverter circuit. The field effect transistors have sources respectively connected to input terminals of the two basic flip-flop circuits, and gates to which clock pulses and inverse clock pulses are applied. The amplifiers respectively composed of an inverter circuit are connected to output terminals of the two basic flip-flop circuits.

Flip-flop circuit

A method for the growth of a compound semiconductor comprises growing on a silicon substrate a polycrystalline layer of a desired Group III-V compound semiconductor or a crystal layer of the desired Group III-V compound semiconductor having inferior crystallinity, growing on the formed layer at least one layer of the same semiconductor as the desired Group III-V compound semiconductor and at least one layer of a Group III-V compound semiconductor having a lattice constant approximating the lattice constant of the desired Group III-V compound semiconductor, which layers are alternately disposed, and growing on the alternately disposed layers a layer of the desired Group III-V compound semiconductor.

Method of growth of compound semiconductor

A hybrid integrated circuit for high output power having a conductive pattern on a ceramic substrate, a lead frame connected to said pattern, and electronic components mounted on said pattern wired with one another, has been found. When said conductive pattern has an inductor in a spiral shape, the same spiral pattern is conformed on the lead frame, and those two spiral patterns are overlapped. Thus, the resistance of the inductor is reduced since the conductive pattern and the lead frame pattern are connected parallel to each other. Then, a large current can be loaded to said inductance with only a small loss. As the material of the lead frame is cheap, the resultant hybrid integrated circuit can be manufactured at a lower cost.

Growing community of inventors

Tokyo, Japan

Masahiro Akiyama