Sumitomo Electric Industries, Limited

Sharp Kabushiki Kaisha Corporation

Toyota School Foundation

Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Sharp Life Science (eu) Limited

Sasakura Engineering Co., Ltd.

Asahi Kogyosha Co., Ltd.

Masahiro Adachi

Yoshiyuki Yamamoto

Takashi Kyono

Shinji Tokuyama

Masaki Ueno

Yusuke Yoshizumi

Yohei Enya

Takamichi Sumitomo

Tsunehiro Takeuchi

Koji Katayama

Kotaro Hirose

Katsushi Akita

Takatoshi Ikegami

Takao Nakamura

Makoto Kiyama

Takashi Matsuura

Toshimitsu Konuma

Michael James Brownlow

Yasuyoshi Kaise

Shimpei Takagi

Hiroshi Morimoto

Fuminori Mitsuhashi

Akihiro Hata

Kyohei Kakuyama

Takeshi Nishi

Yasushi Kubota

Yoshitaka Yamamoto

Masaru Yoshida

Benjamin James Hadwen

Katsunori Yanashima

Shinji Shimada

Kiyoshi Ogishima

Takahiro Tsuji

Nobuyoshi Nagashima

Adrian Marc Simon Jacobs

Yoshihiro Saito

Satoshi Yamaue

Yasunori Tateno

Takashi Funai

Jason Roderick Hector

Ryo Toyoshima

Mark Childs

Alison Mary Skinner

Shunpei Yamazaki

Jun Koyama

Yutaka Takafuji

Mikio Katayama

Nobuaki Yamada

Hiroshi Nakajima

Takeshi Masuda

Wataru Sakurai

Hiroshi Nakanishi

Noriyuki Futagawa

Mitsuaki Tamura

Yasuhiro Okuda

Shuichi Kohzaki

Masahiko Kondo

Hideki Matsubara

Hirohisa Tanaka

Eiichi Takahashi

Shuhei Yasuda

Kiyoshi Okano

Kazuhide Sumiyoshi

Nobuhiro Saga

Kenichi Ishiguro

Hideaki Toshioka

Kyouichirou Nakatsugi

Narihiro Morosawa

Hiromi Sakamoto

Takao Nomura

Toshiyuki Makii

Makoto Ohue

Iwao Sawada

Toshio Nomura

Hirofumi Masuki

Makoto Koganei

Akihiko Sakai

Shunsuke Nishino

Shunsuke Fujii

Do-Gyun Byeon

An optical sensor includes a support film having a first main surface and a second main surface located opposite to the first main surface in a thickness direction; a thermoelectric-conversion material section disposed on the first main surface and including a plurality of strip-shaped first material layers formed of SiGe having p-type conductivity and configured to convert thermal energy into electric energy, and a plurality of strip-shaped second material layers formed of SiGe having n-type conductivity and configured to convert thermal energy into electric energy; a heat sink disposed on the second main surface; and a light absorbing film disposed so as to form a temperature difference in each of the first material layers in longitudinal directions and each of the second material layers in longitudinal directions and configured to convert received light into thermal energy.

Optical sensor

A thermoelectric conversion material includes, a base material composed of SiGe, a first additive element functioning as a dopant, a second additive element different from the first additive element, and oxygen. The second additive element includes at least one of Mg, Ca, and Ti. A content ratio of the second additive element relative to the base material is 0.5 at % to 5 at %. In a rectangular area of a section of the base material, the rectangular area being selected such that a grain boundary intersects opposite sides of the rectangular area, a distribution of the second additive element and the oxygen has a positive correlation. A correlation coefficient of the correlation is in a range of 0.2 or more and less than 1.0.

Thermoelectric conversion material, thermoelectric conversion element, and thermoelectric conversion module

An optical sensor includes a support film, a thermoelectric conversion material portion, a heat sink, a light absorption film, a first electrode, and a second electrode. The thermoelectric conversion material portion includes a plurality of first material layers and a plurality of second material layers. The support film includes a first layer arranged on the heat sink side in a thickness direction and configured with a phononic structure having a large number of holes, and an insulating second layer arranged on the first layer and in contact with the thermoelectric conversion material portion.

A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 mΩcmand not more than 0.5 mΩcm.

Thermoelectric conversion element, thermoelectric conversion module, and method of producing thermoelectric conversion element

An optical sensor includes a support and a thermoelectric-conversion material section including first material layers, second material layers, and a third material layer. Each of the first material layers may have a first region including a first end portion and a second region including a second end portion. Each of the second material layers may have a third region including a third end portion and a fourth region including a fourth end portion. The first region and the second region are electrically connected to the third region and the fourth region, respectively, such that the plurality of first material layers and the plurality of second material layers are alternately connected in series to each other. The third material layer is disposed between the first region and the third region.

Thermoelectric-conversion material element and optical sensor containing the same

A thermoelectric conversion material is represented by a composition formula AgSSe, where x has a value of greater than 0.01 and smaller than 0.6.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor

A thermoelectric conversion material is represented by a composition formula AgαS, where α is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.

A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and light sensor

A thermoelectric conversion material is represented by a composition formula AgSSe. The value of x is not smaller than 0.2 and not greater than 0.95.

A photosensor includes: a support; a thermoelectric conversion material section that is disposed on a first main surface of the support and that includes a plurality of first material layers each having an elongated shape, a plurality of second material layers each having electrical conductivity and an elongated shape, and an insulating film, the first material layers and the second material layers each being configured to convert thermal energy into electrical energy; a heat sink that is disposed on a second main surface of the support and along an outer edge of the support; a light-absorbing film that is disposed in a region surrounded by inner edges of the heat sink as viewed in a thickness direction of the support so as to form temperature differences on the first main surface of the support in longitudinal directions of the first material layers.

Photosensor

A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution Δd/d of 0.0055 or more.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor

An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 μm or more.

A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of Cions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of Cions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiCions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Siions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. A value obtained by dividing the maximum value of the detection intensities of SiCions by an average of detection intensities of SiCions associated with a region of the multilayer body is 1 or greater and 3.5 or less, the region having distances from the exposed surface in a thickness direction of the multilayer body of equal to or greater than 8 nm and 12 nm or less.

Multilayer body and electronic device

A stack includes a base portion consisting of silicon carbide and having a first surface that is a Si face and a carbon atom thin film disposed on the first surface and including a first main surface facing the first surface and a second main surface that is a main surface on an opposite side from the first main surface. The carbon atom thin film consists of carbon atoms. The carbon atom thin film includes at least one of a buffer layer that is a carbon atom layer including carbon atoms bonded to silicon atoms forming the Si face and a graphene layer. The second main surface includes a plurality of terraces parallel to the Si face of the silicon carbide forming the base portion and a plurality of steps connecting together the plurality of terraces.

Stack, electronic device, and method for manufacturing stack

A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

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Osaka, Japan

Masahiro Adachi