Ricoh Company, Ltd.

Sumitomo Electric Industries, Limited

Masahiko Shimada

Seiji Sarayama

Hisanori Yamane

Hirokazu Iwata

Masato Aoki

Masafumi Kumano

Takashi Araki

Hisao Takeuchi

Taira Okamoto

Ken-ichi Matsushita

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Crystal growth apparatus

A method is provided for producing a single crystal body of a group III nitride, comprising the steps of forming a molten flux of a volatile metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel, and wherein a seed crystal is disposed in the reaction vessel.

Production of a GaN bulk crystal substrate and a semiconductor device formed thereon

A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.

Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device

A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

Methods of growing a group III nitride crystal

Crystal growth method

A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.

Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device

A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).

Herein disclosed is a transverse resonance measurement device for measuring the Young's modulus and/or internal friction of the plate specimen of a material over a wide temperature range even if the material is nonconductive, e.g., ceramics, wood or plastics. Platinum paste is applied to one side of a plate specimen to be measured, and is baked into a platinum electrode.

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Miyagi, Japan

Masahiko Shimada