Sharp Kabushiki Kaisha Corporation

Masahiko Sakata

Takahisa Kurahashi

Masahiro Araki

Atsuo Tsunoda

Yoshimi Tanimoto

Daigaku Kimura

Noboru Oshima

Takanori Sonoda

Takaaki Utsumi

Makoto Yokota

Akinori Mizogami

Motoi Nagamori

Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.

Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus

A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

Semiconductor light-emitting device and method of producing the same

The present invention relates to a ridge-stripe semiconductor laser device and a process for producing the same. More specifically, the object of the present invention is to control the formation of cavities at the side of the ridge without adding any step, and to provide a ridge stripe semiconductor laser device with good properties by strictly controlling its ridge width and a process for producing the same. Thereby, it is possible to form a ridge whose sidewalls stand almost vertically.

Semiconductor laser device and process for producing the same

For evaporating a protective coating on a light emitting end surface of a laser chip , there is formed first an Si film , which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating , if oxygen is generated due to decomposition of the evaporation material Al O , and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface is prevented, thereby decreasing damages given to the end surface in the process of protective coating creation. Further, the Si film has a film thickness as small as approx. 20 &angst;. This controls generation of leakage current in the Si film (or the end surface ), and prevents negative influence on oscillation characteristics.

Semiconductor laser device capable of suppressing leakage current in a light emitting end surface and method for manufacturing same

The light-emitting diode array of the invention includes: a semiconductor substrate of a first conductivity type and a plurality of light-emitting elements linearly arranged on the substrate of the first conductivity type. Each of the plurality of light-emitting elements includes: a cladding layer of the first conductivity type; a cladding layer of a second conductivity type; an (Al,Ga,),In,P (where 0&lE;x&lE;1 and 0&lE;y&lE;1) active layer interposed between the cladding layer of the first conductivity type and the cladding layer of the second conductivity type; and a current diffusion layer of the second conductivity type deposited on the cladding layer of the second conductivity type. In the light-emitting diode array, at least the current diffusion layer of the second conductivity type and the cladding layer of the second conductivity type are electrically isolated from each other in two adjacent light-emitting elements among the plurality of light-emitting elements.

Growing community of inventors

Osaka, Japan

Masahiko Sakata