Canon Kabushiki Kaisha

Hitachi-high-technologies Corporation

Jeol Ltd.

Masahiko Okunuki

Takeo Tsukamoto

Isamu Shimoda

Akira Suzuki

Osamu Tsujii

Toshihiko Takeda

Akira Shimizu

Tetsuya Kaneko

Satoshi Shimizu

Masao Sugata

Haruhito Ono

Nobuo Watanabe

Takashi Ogura

Mamoru Miyawaki

Makoto Sato

Shinan Wang

Kenji Tamamori

Taiko Motoi

Toshiaki Aiba

Takao Yonehara

Takeshi Ichikawa

Masanori Takenouchi

Masakazu Morishita

Kenji Nakamura

Takao Kariya

Mitsuaki Seki

Fumitaka Kan

Naoji Hayakawa

Masato Muraki

Akira Miyake

Hiroya Ohta

Shigeru Terashima

Hisashi Namba

Shin Matsui

Susumu Goto

Nobuki Yoshimatsu

Yasuo Kawai

Hidetoshi Suzuki

Ichiro Nomura

Kazuhiro Matsumoto

Hiroyuki Shinbata

Akio Atsuta

Norio Kaneko

Yoshikazu Banno

Nobutoshi Mizusawa

Yoshifumi Nishimoto

Ryuichi Arai

Norio Saito

Keiji Hirabayashi

Yuichi Nishii

Tomohiko Matsuura

Keiji Tsuchiya

Takeshi Haraguchi

Sayaka Tanimoto

Noriko Kurihara

Susumu Gotoh

Yukio Masuda

Takahiko Ishiwatari

Masaki Takakuwa

Norimichi Anazawa

Ryuzo Aihara

Yuichi Kumabe

Hiroya c/o Hitachi Ltd Int Property Group Ohta

A mammography apparatus includes a detector that detects X-rays transmitted through a breast, and an optically transparent or semitransparent pressing panel for pressing the breast. The apparatus further includes a near infrared ray source that provided between the X-ray source and the pressing panel and arranged in a two-dimensional shape in alignment with the pressing panel, and that is movable between a first position in close contact with the pressing panel and a second position outside an X-ray image capture region. Near infrared image capture is carried out using the near infrared ray source by causing the near infrared ray source to be in the first position, and the near infrared ray source is caused to retract to the second position when carrying out X-ray image capture using the X-ray source.

Mammography apparatus

An X-ray imaging apparatus is provided with a multi X-ray source and a collimator in which a plurality of slits for X-rays to pass through are two-dimensionally formed, the size and position of the slits being adjustable. A control unit, as a first control mode, controls the size and position of the slits to move an examination region in parallel, when an X-ray source is changed to a different X-ray source, such that the examination directions are parallel before and after the change. Also, the control unit, as a second control mode, controls the size and position of the slits to rotate the examination direction, when an X-ray source is changed to a different X-ray source, such that the center of the examination regions is the same before and after the change.

X-ray imaging apparatus

An X-ray imaging apparatus includes a multi X-ray source which includes a plurality of X-ray focuses to generate X-rays by irradiating X-ray targets with electron beams, a detector which detects X-rays which have been emitted from the multi X-ray source and have reached a detection surface, and a moving mechanism for moving the multi X-ray source within a plane facing the detection surface. The X-ray imaging apparatus acquires a plurality of X-ray detection signals from the detector by causing the multi X-ray source to perform X-ray irradiation while shifting the positions of a plurality of X-ray focuses which the detector has relative to the detection surface by moving the multi X-ray source using the moving mechanism. The apparatus then generates an X-ray projection image based on the plurality of X-ray detection signals acquired by the detector.

Multi X-ray imaging apparatus and control method therefor

In an X-ray generator which includes an electron beam generating unit which has a plurality of electron emitters and generates an electron beam corresponding to driven electron emitters, and a target electrode which generates X-rays with the irradiation position of an electron beam generated by the electron beam generating unit being an X-ray focus, the X-ray focus shape formed by a set of X-ray focuses on the target electrode is controlled by individually controlling driving of the plurality of electron emitters.

X-ray generator, X-ray imaging apparatus, and control methods therefor

A compact apparatus can form multi-X-ray beams with good controllability. Electron beams (e) emitted from electron emission elements () of a multi-electron beam generating unit () receive the lens effect of a lens electrode (). The resultant electron beams are accelerated to the final potential level by portions of a transmission-type target portion () of an anode electrode (). The multi-X-ray beams (x) generated by the transmission-type target portion () pass through an X-ray shielding plate () and X-ray extraction portions () in a vacuum chamber and are extracted from the X-ray extraction windows () of a wall portion () into the atmosphere.

Multi X-ray generator and multi X-ray imaging apparatus

A multi-X-ray generating apparatus which has a plurality of electron sources arranged two-dimensionally and targets arranged at positions opposite to the electron sources includes a multi-electron source which includes a plurality of electron sources and outputs electrons from driven electron sources by selectively driving a plurality of electron sources in accordance with supplied driving signals, and a target unit which includes a plurality of targets which generate X-rays in accordance with irradiation of electrons output from the multi-electron source and outputs X-rays with different radiation qualities in accordance with the generation locations of X-rays. The generation locations and radiation qualities of X-rays from the target unit are controlled by selectively driving the electron sources of the multi-electron source.

Multi-X-ray generating apparatus and X-ray imaging apparatus

A multi X-ray generating apparatus which has a plurality of electron sources arranged two-dimensionally and targets arranged at positions opposite to the electron sources includes a multi electron source which includes a plurality of electron sources and outputs electrons from driven electron sources by selectively driving a plurality of electron sources in accordance with supplied driving signals, and a target unit which includes a plurality of targets which generate X-rays in accordance with irradiation of electrons output from the multi electron source and outputs X-rays with different radiation qualities in accordance with the generation locations of X-rays. The generation locations and radiation qualities of X-rays from the target unit are controlled by selectively driving the electron sources of the multi electron source.

Multi X-ray generating apparatus and X-ray imaging apparatus

A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Method for forming etching mask, method for fabricating three-dimensional structure and method for fabricating three-dimensional photonic crystalline laser device

A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 &#x3bc;m tin in depth according to a predetermined line width.

Method of manufacturing a nano structure by etching, using a substrate containing silicon

Growing community of inventors

Akiruno, Japan

Masahiko Okunuki