Hitachi, Ltd.

Hitachi Electronics Co., Ltd.

Masahiko Ogirima

Naoki Yamamoto

Tohru Nakamura

Yuichi Ono

Minoru Nagata

Kazuo Nakazato

Takao Miyazaki

Akira Shintani

Michiyoshi Maki

Nobuyoshi Natsuaki

Yoichi Tamaki

Shigeo Kato

Kazuhiro Kurata

Yukio Takano

Seiichi Isomae

Mitsuo Nanba

Hirotsugu Kozuka

Shigeru Aoki

Hajime Kusumoto

Kozi Honma

Yoshiteru Keikoin

Shojiro Sugaki

Shojiro Sugaki, Deceased

Toshimitu Shinoda

A semiconductor device is constructed so that an insulation film is provided in regions other than a protruding portion of a substrate. A polycrystalline silicon layer and a metal silicide layer are formed over said insulation film to provide a multi-layer structure, and a take-out portion for at least one of the emitter, base, and collector members of a bipolar transistor provided in the mesa region is constituted by a film of this multi-layer structure. By virtue of the use of metal silicide together with the polycrystalline silicon, a very low resistance is achieved which enhances the device's operating speed. Further, the metal silicide is separated from the protruding portion of the substrate by a portion of the polycrystalline silicon to provide a smooth interface with the substrate. This smooth interface significantly reduces crystal defects in the single crystal substrate.

Semiconductor device

The invention deals with a semiconductor device which comprises a semiconductor substrate of a first conductivity type, a semiconductor region formed on said substrate, and a first insulation film provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer formed in the periphery of said semiconductor region thereby to reduce the parasitic capacitance, and wherein said insulation film is stretched and arranged on the lower side of said semiconductor region.

Semiconductor device having a PN junction formed on an insulator film

After a silicon layer is selectively grown on that part of a silicon substrate surface on which an electrode is to be formed, the silicon layer is reacted with a refractory metal so as to form the electrode made of a metal silicide layer.

Method of forming electrode of semiconductor device

Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused. The impurity can be diffused in much larger quantities than in a prior art vapor diffusion, and a very low sheet resistance for the diffused layer of antimony can be attained.

Method of diffusing an impurity

This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semiconductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of a Si wafer is ground to form a damaged layer having a certain fixed thickness, the Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is manufactured.

Semiconductor substrate and a manufacturing method thereof

A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si.sub.3 N.sub.4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.

Germanium-containing silicon nitride film

A layer of GaAs.sub.1-x P.sub.x (0&lt;x&lt;1) is epitaxially grown on GaAs which is disposed in a reaction tube at a different location from the Ga source by maintaining the GaAs at a temperature range of from about 750.degree. C. to about 850.degree. C., maintaining the Ga source at a temperature higher than that of the GaAs, introducing As.sub.4 gas, PCl.sub.3 gas and H.sub.2 gas or AsCl.sub.3 gas, P.sub.4 gas and H.sub.2 gas into the reaction tube from the Ga source side, whereby said gases react with the Ga source and produce GaCl gas, and contacting said gases including the GaCl gas with the surface of the GaAs.

Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x

A longitudinal epitaxial growth device for making a mixed crystal of III.sub.b -V.sub.b group intermetallic compound semiconductor in which a means for inverting the reaction gas flow is disposed between the gallium source and the substrate, the height of the device is reduced, and the length of the gas mixing band is made sufficiently long.

Epitaxial growth device

Growing community of inventors

Tokyo, Japan

Masahiko Ogirima