Ngk Insulators, Inc.

Masahiko Namerikawa

Kazuyoshi Shibata

Yukihisa Takeuchi

Takashi Yoshino

Shinsuke Yano

Tomoyoshi Tai

Keiichiro Asai

Koji Ikeda

Yoshitaka Kuraoka

Masaki Iwamoto

Takao Ohnishi

Yuji Hori

Masahiro Abe

Masashi Goto

Tsutomu Nanataki

Koji Kimura

Morimichi Watanabe

Takami Hirai

Shohei Oue

Nobuo Takahashi

Iwao Ohwada

Katsuhiro Imai

Mikiya Ichimura

Hideki Shimizu

Takahiro Yamadera

Yudai Uno

Masayuki Uetani

Ryosuke Hattori

Tomohiro Yamada

Yasufumi Horio

Shigeki Nakao

Tatsuya Tsuruoka

Hideaki Okubo

Atsuo Mizuma

An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon. A bonding layer is on the intermediate layer and is composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, and a high resistance silicon and hafnium oxide. A supporting body is composed of a polycrystalline ceramic and is bonded to the bonding layer by direct bonding, and an electrode is on the piezoelectric material substrate.

Acoustic wave devices and a method of producing the same

A piezoelectric monocrystalline substrate is composed of a material represented by LiAO(A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of EO(E represents at least one element selected from the group consisting of niobium and tantalum and 0.29&#x2264;x&#x2264;0.89).

Bonded body with piezoelectric monocrystalline substrate and supporting substrate

A bonding layeris formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

Bonding method

In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

Elastic wave element and method for manufacturing same

It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

A heat discharge structure that includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Heat discharge structures for light source devices and light source systems

A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cmin a Raman spectrum is lower than or equal to 1.8 cm. With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride.

GaN template substrate

A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.

Light emitting device and method for manufacturing light emitting device

A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts.

The present invention intends to provide a small-sized impedance matching device with a small variation in quality and large-current tolerance. The above described intention of the present invention is achieved by an impedance matching device, which comprises a wiring portion comprising a conductor pattern for wiring, embedded inside or formed on the surface of first dielectric material, and either one or both of an inductor portion comprising a conductor pattern for inductor, embedded inside or formed on the surface of the first dielectric material, or a capacitor portion comprising at least one pair of conductor patterns for capacitor and second dielectric material with a dielectric constant larger than that of the first dielectric material, existing between the pair of conductor patterns for capacitor wherein the thicknesses of the conductor pattern for wiring and the conductor pattern for inductor are 20 &#x3bc;m or more.

Impedance matching device

A combiner for a Doherty amplifier includes, on and in a dielectric substrate, a carrier input terminal, a peak input terminal, an output terminal, a combining point for combining an output signal from the carrier amplifier and an output signal from the peak amplifier, a first &#x3bb;/4 line connected between the carrier input terminal and the combining point, a second &#x3bb;/4 line connected between the combining point and the output terminal, and a first directional coupler. The first directional coupler includes a third &#x3bb;/4 line electromagnetically coupled to one, to be monitored, of the first &#x3bb;/4 line and the second &#x3bb;/4 line.

Combiner for Doherty amplifier

A ceramic compact having a patterned conductor is obtained by coating the patterned conductor with a slurry and then by hardening the slurry. The slurry is prepared by mixing a thermosetting resin precursor, a ceramic powder, and a medium. In the ceramic compact, an isocyanate- or isothiocyanate-containing gelling agent and a hydroxyl-containing polymer are reacted and hardened to produce a thermosetting resin. The hydroxyl-containing polymer is preferably a butyral resin, an ethylcellulose-based resin, a polyethyleneglycol-based resin, or a polyether-based resin.

Method for producing a ceramic compact

A ceramic compact is provided having a patterned conductor is obtained by coating the patterned conductor with a slurry and then hardening the slurry. The slurry is prepared by mixing a thermosetting resin precursor, a ceramic powder, and a medium. In the ceramic compact, an isocyanate- or isothiocyanate-containing gelling agent and a hydroxyl-containing polymer are reacted and hardened to produce a thermosetting resin. The hydroxyl-containing polymer is preferably a butyral resin, an ethylcellulose-based resin, a polyethyleneglycol-based resin, or a polyether-based resin.

Method for producing ceramic compact and ceramic part

Ceramic compact, ceramic part, method for producing ceramic compact, and method for producing ceramic part

An ultrasonic motor piezoelectric actuator element uses a primary longitudinal mode and a secondary bending mode and includes a stacked piezoelectric element in which piezoelectric layers and electrode layers are stacked alternately in such a manner that the electrode layers divide the piezoelectric layers into two approximately equal portions. A piezoelectric inactive region is formed from the surface portion to the center portion in the thickness direction of the stacked piezoelectric element. The migration resistance of the piezoelectric actuator element is improved while suppressing a decrease in displacement so that a short circuit can be prevented and portions generating heat during alternating polarization can be dispersed, whereby reliability is increased. Moreover, the amount of electrode material used can be reduced, whereby cost can be reduced.

Growing community of inventors

Seto, Japan

Masahiko Namerikawa