Toyo Tire Rubber Co., Ltd.

Masahiko Nakamori

Takatoshi Yamada

Tetsuo Shimomura

Kazuyuki Ogawa

Atsushi Kazuno

Koichi A Ono

Shigeru Komai

Masayuki Tsutsumi

Yoshiyuki Nakai

Tsuyoshi Kimura

Masahiro Watanabe

Hiroshi Seyanagi

Takashi Masui

Takeshi Fukuda

Masato Doura

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

Polishing pad and method of producing semiconductor device

A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.

Polishing pad

The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.

Polishing pad and method of producing the same

A polishing pad has an excellent polishing rate and is superior in longevity without generating center slow. A method of manufacturing a semiconductor device with the polishing pad is also provided. The polishing pad has a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.

A method for manufacturing a polishing pad made from a polyurethane resin foam having very uniform, fine cells therein and a polishing pad obtained by that method provides a polishing pad having better polishing characteristics (especially, in planarization) while providing improved dressability while maintaining the planarization characteristics and polishing speed of a conventional polishing pad. The polyurethane resin foam is a cured product obtained by reacting an isocyanate-terminated prepolymer with an aromatic polyamine chain extender having a melting point of 70&#xb0; C. or lower, for example.

Polishing pad and manufacturing method thereof

It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

A polishing pad includes a polishing layer having abrasive grains dispersed in a resin and is characterized in that the resin is a resin containing ionic groups in the range of 20 to 1500 eq/ton.

Polishing pad and cushion layer for polishing pad

The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference &#x394;T (&#x394;T=T&#x2212;T) (%) between Tand Tis within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein Tis the light transmittance (%) of the light-transmitting region measured at the measurement wavelength &#x3bb; after dipping for 24 hours in a KOH aqueous solution at pH 11 or an HOaqueous solution at pH 4 and Tis the light-transmittance (%) measured at the measurement wavelength &#x3bb; before the dipping.

Polishing pad and semiconductor device manufacturing method

Grinding pad and method of producing the same

A polishing pad includes at least a polishing layer and a cushion layer and is characterized in that the difference in hardness in Shore D hardness between the polishing layer and the cushion layer is 3 or more.

The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 &#x3bc;m/(gf/cm).

Polishing pad and method for manufacture of semiconductor device using the same

A polyurethane composition containing solid beads dispersed therein, is formed of a microcellular polyurethane foam, and the composition has a storage modulus of elasticity at 40&#xb0; C. of 270 MPa or more as measured by means of a dynamic elasticity measuring device. Another polyurethane composition of this invention contains solid beads dispersed therein, that are capable of swelling with or are soluble in an aqueous medium. The former composition has excellent flattening capability, and the latter composition can provide a polished surface which combines good flatness and good uniformity and can also reduce scratches on the surface.

Growing community of inventors

Ohtsu, Japan

Masahiko Nakamori