Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Masahiko Kuraguchi

Yosuke Kajiwara

Aya Shindome

Daimotsu Kato

Akira Mukai

Hiroshi Ono

Shinya Nunoue

Toshiki Hikosaka

Hisashi Saito

Tatsuo Shimizu

Jumpei Tajima

Kentaro Ikeda

Miki Yumoto

Kenjiro Uesugi

Shigeya Kimura

Akira Yoshioka

Toshiya Yonehara

Hitoshi Sugiyama

Yoshiharu Takada

Matthew David Smith

Po-Chin Huang

Wataru Saito

Takashi Shinohe

Tomoaki Inokuchi

Ryosuke Iijima

Akira Tanaka

Yusuke Kobayashi

Koichi Tachibana

Hisashi Yoshida

Tatsuya Nishiwaki

Masaaki Onomura

Kazuto Takao

Toru Sugiyama

Shintaro Nakano

Hiro Gangi

Takao Noda

Kohei Oasa

Shigeto Fukatsu

Tomohiro Nitta

According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes AlGaN (0≤x<1). The first semiconductor layer includes first, second, third, fourth, fifth, and sixth partial regions. The second semiconductor layer includes AlGaN (0<x—1, x<x). The second semiconductor layer includes first and second semiconductor portions. The first insulating member includes a first insulating region and includes a first material. The first insulating region contacts the third partial region and a part of the third electrode. The first member includes a first portion and includes a second material different from the first material. The first portion is between the fourth partial region and an other part of the third electrode.

Semiconductor device

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, a nitride region, and a first insulating member. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to sixth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The sixth partial region is between the fifth and second partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion is in contact with the fifth partial region. The nitride region includes a first nitride portion being in contact with the sixth partial region. The first insulating member includes a first insulating region between the third partial region and the first electrode portion.

Semiconductor device in which current collapse and leakage current between source and drain regions are suppressed

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first member. The first semiconductor region includes AlGaN (0≤x1<1). The second semiconductor region includes AlGaN (x1<x2≤1). The first member includes first and second regions. The second region is between the first region and the first electrode region of the second electrode. A part of the second region is between the second semiconductor portion of the second semiconductor region and the second electrode region. The second region includes at least one first element selected from the group consisting of Ti, Al, Ga, Ni, Nb, Mo, Ta, Hf, V, and Au. The first region does not include the first element, or a concentration of the first element in the first region is lower than a concentration of the first element in the second region.

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, first and second insulating members. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes a first insulating portion. The first insulating portion is between the third and first electrode portions. The second insulating member includes first and second insulating regions. The first insulating region is between the first electrode and the first electrode portion. The second insulating region is between the first insulating region and the first electrode portion.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first insulating film. The first semiconductor region includes a first partial region, a second partial region, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second semiconductor region includes a sixth partial region and a seventh partial region. The third electrode overlaps the sixth and seventh partial regions. The first insulating film includes a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region.

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.

A semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions. The first and second insulating regions are between the nitride regions and the third electrode.

Semiconductor device including compound and nitride members

According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.

Semiconductor device that includes a conductive member and an electrode and method for manufacturing the same

According to one embodiment, a semiconductor device includes first, second, third nitride members, first, second, third electrodes, and a first insulating member. The first nitride member includes a first face along a first plane, a second face along the first plane, and a third face. The third face is connected with the first and second faces between the first and second faces. The third face crosses the first plane. The first face overlaps a part of the first nitride member. The second nitride member includes a first nitride region provided at the first face. The third nitride member includes a first nitride portion provided at the second face. The first electrode includes a first connecting portion. The second electrode includes a second connecting portion. The third electrode includes a first electrode portion. The first insulating member includes a first insulating region.

According to one embodiment, a semiconductor device includes first, second, third electrodes, first, and second semiconductor regions, a first conductive member, and an insulating member. The third electrode is between the first and second electrodes. The first semiconductor region includes first to sixth partial regions. The second semiconductor region includes first to third semiconductor portions. The first conductive member is electrically connected with a first one of the first and third electrodes. The first conductive member includes a first conductive end portion. The insulating member includes first and second nitride regions. The second semiconductor portion is between the fifth partial region and the first nitride region. The third semiconductor portion is between the sixth partial region and the second nitride region. The first nitride region includes a first nitride end portion. The first nitride end portion is in contact with the second semiconductor region.

The nitride-based semiconductor device includes a carrier traveling layercomposed of non-doped AlGaN (0≤X<1); a barrier layerformed on the carrier traveling layerand composed of non-doped or n-type AlGaN (0<Y≤1, X<Y) having a lattice constant smaller than that of the carrier traveling layer; a threshold voltage control layerformed on the barrier layerand composed of a non-doped semiconductor having a lattice constant equal to that of the carrier traveling layer; and a carrier inducing layerformed on the threshold voltage control layerand composed of a non-doped or n-type semiconductor having a lattice constant smaller than that of the carrier traveling layer. The nitride-based semiconductor device further includes a gate electrodeformed in a recess structure, a source electrodeand a drain electrode

Nitride-based semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes first and second regions, a first insulating portion, and first, second, and third electrodes. The first region includes first and second partial regions, and a third partial region between the first and second partial regions. The second region includes fourth and fifth partial regions. The fourth partial region overlaps the first partial region. The fifth partial region overlaps the second partial region. The first insulating portion includes first, second, and third insulating regions. The first insulating region is provided between the second insulating region and the third partial region and between the third insulating region and the third partial region. The first electrode is electrically connected to the fourth partial region. The second electrode is away from the first electrode and is electrically connected to the fifth partial region. The third electrode is provided between the first and second electrodes.

According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes AlGaN, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes AlGaN, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes AlGaN, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

Semiconductor device including different nitride regions improving characteristics of the semiconductor device

A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.

Semiconductor device, method for manufacturing the same, power circuit, and computer

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes AlGaN and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes AlGaN. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

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Yokohama, Japan

Masahiko Kuraguchi