Anelva Corporation

Kabushiki Kaisha Toshiba

3M Innovative Properties Company

Other

Asahi Glass Company, Limited

Masahiko Kobayashi

Nobuyuki Takahashi

Masahito Ishihara

Kazuharu Yamamoto

Hajime Sahase

Yuichi Tsubaki

Nobuyoki Takahashi

Hiroshi Yamakawa

Yoichiro Numasawa

Toshimi Yajima

Tetsuo Ishida

Masahiro Tsuchiya

Yoshihisa Kawate

Katsuki Saito

Hirobumi Takemura

Kenji Numajiri

To provides a contact holder, capable of compensating a change of signal transmission characteristic at the outer edge area of the substrate. A substratehas grounding conductive layersarranged on or above surfacesof the substrate, near a plunger of a signal transmitting contactEach grounding conductive layer is electrically connected to a conductive portionelectrically connected to each grounding contact, on surfaceorof substrateFurther, each grounding conductive layer is not electrically connected to the signal transmitting contact.

Contact holder

To provide an electronic device socket able to shorten conductive paths between terminals of an electronic device and contacts of a circuit board. An electronic device socket () wherein a socket partelectrically connecting a plurality of terminals of an electronic device to corresponding contacts of a circuit board has a plurality of through holesarranged corresponding to the positions of the terminals. Each through holehas an elastic membercomprised of a coil spring, provided with an upper part having elasticity along a longitudinal direction of the through hole and a lower part able to form a conductive path substantially parallel to an extension direction of the through hole, a plungerhaving conductivity biased from the elastic member toward the top surface in a second state where the electronic device is attached and the terminals and contacts of the circuit board are electrically connected, and a conductive filmformed at an inner surface of the through hole so as to electrically connect with near a part of the elastic member where a upper part of the elastic member and the plunger contact each other, and a lower part of the elastic member when the elastic member is compressed.

Electronic device socket

A socket () for electronic devices has a plurality of retainers (). Each retainer () has a first member (), a first shaft () for pivotably connecting a proximal portion of the first member with a lower frame () so the distal portion of the first member moves between an operative position in which the distal portion of the first member stays on the electronic device to make contact with an upper surface of the electronic device and an inoperative position in which the distal portion of the first member stays away from the electronic device, a second member () having a distal portion and a proximal portion, a second shaft () for pivotably connecting the distal portion of the second member with the intermediate portion of the first member; and a third shaft () for pivotably connecting the proximal portion of the second member with the upper frame.

Socket for electronic devices

To provide an IC socket which reduces the operating force of a pressing member, enlarges the dimensions of a pressing surface of the pressing member, and prevents positional offset of the IC device while applying the pressing force. Means for Solution: An IC socketis provided with a housinghaving a support, a plurality of contacts, a pressing memberfor pressing an IC device supported at the support toward a group of contacts, and a biasing mechanismfor generating a pressing force for pressing the IC device at the pressing member. The pressing member has a pivotguided linearly on the housing and a pressing surface swingable about the pivot on the housing, while the biasing mechanismapplies a biasing force to the pivot of the pressing member so as to cause the pressing force at the pressing surface. The pressing surface of the pressing member moves in parallel displacement between an operating position where it is closest to the support and a first nonoperating position where it is away from the support and swings between the first nonoperating position and a second nonoperating position further away from the support.

IC socket

This invention discloses ionization sputtering apparatuses which have a function for ionizing sputtered particles. Those apparatuses comprise an ionization means for ionizing sputtered particles from a target. The ionization means generates a plasma by applying radio frequency energy with plasma generation gas at an ionization space between the target and a holder holding a substrate. An disclosed apparatus comprises a magnetic device preventing the plasma from diffusing from the ionization space. Another disclosed apparatus comprises a magnetic device which orients the ionized sputtered particles toward the substrate.

Ionization sputtering apparatus

In bending a glass sheet, the load applied to an intermediate glass sheet can be equalized to improve the quality of a final glass sheet. For this purpose, a forming ring comprises a first forming frame and a second forming frame , and the swingable center of each of swingable frames , which forms right and left portions of a second forming frame , is located at an intermediate position apart from a separation position from each of fixed frames . By such arrangement, the intermediate glass sheet can be equally supported when the swingable frames are moved along the intermediate glass sheet and the intermediate glass sheet is transferred from the first forming frame onto the second forming frame

Method for bending a glass sheet, a ring mold for bending a glass sheet, and apparatus using the ring mold

A sputtering apparatus which is used in a film depositing step in manufacturing a semiconductor integrated circuit or the like. In a vacuum vessel, a target and a substrate are disposed so as to be coaxial and parallel with and oppose each other, and a thin film is deposited on the inner face of a fine hole which is formed in the surface of the substrate. The target has a size Dt at which relationships that Q,&equals;N&middot;Q,and that N is not smaller than 0.7, and more preferably not smaller than 0.7 and not larger than 1.2 are established between an angle Q,satisfying tan Q,&equals;(Dt&minus;Ds)/2L, and an angle Q,satisfying tan Q,&equals;A/B where A indicates a diameter of the opening of the fine hole, B indicates a depth of the hole, Ds indicates a size of the substrate, and L indicates a distance between the target and the substrate.

Sputtering apparatus

A substrate which has been heated to a predetermined temperature by a heating unit during sputtering is transferred into an unload-lock chamber having a vacuum pump system and a vent gas introducing system. The unload-lock chamber is provided with a cooling stage which makes surface contact with the substrate so as to forcedly cool the substrate to a predetermined temperature. The substrate is placed on the cooling stage and forcedly cooled. After the substrate is cooled to the predetermined temperature or lower, the vent gas introducing system is operated so that the interior of the unload-lock chamber is returned to the atmospheric pressure ambient. Since the substrate under a high temperature condition does not make contact with the atmospheric pressure ambient, film properties are prevented from being varied.

Method of handling a substrate after sputtering and sputtering apparatus

A sputtering device includes a sputter chamber equipped with a vacuum pump system; a metal target provided inside the sputter chamber; a sputtering power source for producing a sputter discharge and sputtering the target to create sputter particles; a substrate holder for holding a substrate in the position where the sputter particles land; and a gas introduction device for introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target, and produces a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone, wherein the compound can be dissociated in another region of the substrate. A method of sputtering includes the steps of producing a sputter discharge with a sputtering power source for sputtering a metal target in a sputter chamber to create sputter particles; holding a substrate in a position where the sputter particles land; introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target to produce a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone; and dissociating the compound in another region of the substrate.

Sputter device

A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The supplemental electrode is either maintained at a floating potential so that it is capacitively coupled with the target to which high frequency electric power has been applied, in addition, high frequency electric power of the same frequency may be applied directly to the supplemental electrode. A plasma P' is formed on the inside of the supplemental electrode, and the sputter particles released from the target are ionized. An extraction-use electric field is set up by an electric field establishment means, and is directed perpendicularly to the substrate. This construction and its associated method allow a film to be formed with good bottom coverage on the inner surfaces of holes whose aspect ratio is over 4.

Sputtering device and sputtering method

A sputtering apparatus which is used in a film depositing step in manufacturing a semiconductor integrated circuit or the like. In a vacuum vessel, a target and a substrate are disposed so as to be coaxial and parallel with and oppose each other, and a thin film is deposited on the inner face of a fine hole which is formed in the surface of the substrate. The target has a size Dt at which relationships that Q.sub.1 =N.multidot.Q.sub.2 and that N is not smaller than 0.7, and more preferably not smaller than 0.7 and not larger than 1.2 are established between an angle Q.sub.1 satisfying tan Q.sub.1 =(Dt-Ds)/2L, and an angle Q.sub.2 satisfying tan Q.sub.2 =A/B where A indicates a diameter of the opening of the fine hole, B indicates a depth of the hole, Ds indicates a size of the substrate, and L indicates a distance between the target and the substrate.

A sputtering apparatus with improved bottom coverage ratio, is used in a film depositing step for manufacturing a semiconductor integrated circuit or the like. In the apparatus, arcuate leakage lines of magnetic force emerge from a magnet mechanism which is part of a cathode, and the lines of magnetic force are ranged into a circumferential shape so as to set a plurality of circumferential magnetic fields on the surface of a target. The plurality of circumferential magnetic fields form a plurality of erosion regions having a circumferential shape, without the regions crossing each other. When the diameter of the deepest erosion portion is small, the incident angle of sputter particles can be made small without increasing the target-to-substrate distance. Specifically, in a portion of the substrate on which sputter particles impinge at the largest incident angle from the deepest erosion portion of the erosion regions, the incident angle is smaller than that in the case of a single erosion region, thereby allowing an improved bottom coverage ratio of the fine holes in the substrate, while maintaining a required film deposition rate.

A method and apparatus for facilitating high-quality hot reflow sputtering with no occurrence of voids while reducing the processing time by rapid heating of the substrate. The method comprises two steps. In the first step, a thin base film 81 of aluminum is formed on the side and bottom surfaces of a minute hole 90 formed in the surface of a substrate 9. Substrate 9 is heated to a first temperature of no more than 100.degree. C. at which it is possible to prevent gaps occurring in the base film 81. In the second step, the hole is filled in with aluminum by depositing a further film of aluminum 82 inside hole 90 and causing it to reflow. Substrate 9 is heated to a second temperature which is higher than the first temperature. The hot reflow sputtering apparatus is equipped with an electrostatic attraction mechanism 43, which uses static electricity to grip substrate 9 against a substrate holder 4 provided with an indentation 40 in the substrate mounting surface thereof, and a pressurizing gas introduction system 42 which introduces a pressurizing gas into the indentation 40. A control unit 47 controls the apparatus so that neither electrostatic attraction mechanism 43 nor pressurizing gas introduction system 42 are operated in the first step. In the second step the pressurizing gas introduction system 42 is operated after the electrostatic attraction mechanism 43 has been operated.

Hot reflow sputtering method and apparatus

A long distance sputtering apparatus is provided in which a target and a substrate are disposed so as to oppose each other in a vacuum vessel provided with an exhaust system, wherein the target and substrate are separated by a distance of 150 mm or more. The long distance sputtering apparatus includes a gas-introducing tube, a cylindrical shield, and an exhaust hole. The gas-introducing tube introduces gas from a location closer to the target than halfway between the target and the substrate. The shield is disposed so as to surround the space between the target and the substrate. The exhaust hole is formed closer to the substrate than the gas-introducing tube. The pressure distribution of the sputtering gas between the target and the substrate is characterized by a higher pressure toward the target and a lower pressure toward the substrate.

Growing community of inventors

Kanagawa, Japan

Masahiko Kobayashi