Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Masahiko Kitagawa

Yoshitaka Tomomura

Kenji Nakanishi

Shigeo Nakajima

Satoshi Yamaue

Shinya Hirata

A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.

Compound semiconductor luminescent device

An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, and at least a pair of electrodes having external leads in which one electrode is connected to the uppermost layer of the electroluminescent part and another electrode is directly connected to the lowest layer of the electroluminescent part through the through-hole of the substrate. Thereby, a voltage from an external source is enabled to be directly applied to the electroluminescent part.

Compound semiconductor electroluminescent device

A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.

Method for producing a group II-VI compound semiconductor thin film and

A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers. Further, in the arrangement, more than two waveguide layers and clad layers may be formed in such a manner that each of the waveguide layer is put between the clad layers.

Semiconductor waveguide structure of a II-VI group compound

A luminescent material capable of emitting a blue-green light with high luminance, which comprises a single crystalline sulfide solid solution of cubic or hexagonal system represented by the formula: Zn.sub.1-(x+y) Cd.sub.y Al.sub.x S, wherein x and y satisfy 0.001.ltoreq.x&lt;0.1, 0&lt;y.ltoreq.0.5, respectively.

Luminescent material

An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.

Electroluminescent device of compound semiconductor with buffer layer

A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.

Method of growth II-VI semiconducting compounds

An electroluminescent device of compound semiconductor which is made of II-IV compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is Cd or Zn) as an essential composite element.

Electroluminescent device of II-IV compound semiconductor

A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n junction type compound semiconductor placed over the electroconductive layer and a step (B) of forming a pair of ohmic electrodes as electrically connected to each of said layers, both of the steps (A) and (B) being performed by using molecular beam growth under the irradiation with a light beam.

Process for preparing electroluminescent device of compound semiconductor

An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate,

Electroluminescent device of compound semiconductor comprising ZnS or

A process for preparing a doped epitaxial compound semiconductor on a substrate by molecular beam epitaxy, the molecular beam epitaxy being effected under the irradiation of the substrate surface with a specific electromagnetic radiation.

Process for preparing epitaxial compound semiconductor

An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.

Process for preparing epitaxial II-VI compound semiconductor

The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.

Electroluminescent device of compound semiconductor

The present invention provides an electroluminescent device of Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.

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Nara, Japan

Masahiko Kitagawa