Wako Pure Chemical Industries, Inc.

Purex Co., Ltd.

Masahiko Kakizawa

Ichiro Hayashida

Hironori Mizuta

Osamu Ichikawa

Ken-ichi Umekita

Hisashi Muraoka

Hiroyoshi Nawa

Hiroyuki Tsurumoto

Takahiro Yokomizo

Mayumi Kimura

Kenichi Umekita

The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide. The present invention relates to: an etching agent for a titanium-based metal on a semiconductor substrate, having a titanium-based metal and a metallic copper or a copper alloy on the upper part of the titanium-based metal, comprising an aqueous solution containing at least (A) hydrogen peroxide, (B) phosphonic acid-based chelating agent having a nitrogen atom in the structure, (C) alkali metal hydroxide, and (D) organic acid having at least one hydroxyl group and at least three carboxyl groups; an etching method, which comprises using the etching agent; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Etching agent, etching method and etching agent preparation liquid

The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

Resist remover composition and method for removing resist using the composition

The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor&#x2014;Cu film, in particular, a Cu-BTA film. The present invention provides a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles, and a cleaning method for a surface of substrate, which comprises the surface of substrate is treated with said cleaning agent.

Cleaning agent for substrate and cleaning method

A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiOof the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.

Semiconductor wafer cleaning agent and cleaning method

Cleaning agent for a semi-conductor substrate

Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

Cleaning agent

This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.

The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.

Surface treating agents and treating process for semiconductors

A combination of a first surface treating solution comprising an inorganic or organic alkali such as ammonia or a quaternary ammonium hydroxide, hydrogen peroxide, water and a second surface treating solution of ultra-pure water, at least one of the first and second surface treating solutions containing as a complexing agent a compound having one or more phosphonic acid groups in the molecule and showing chelating ability, or an oxidized form thereof, or polyphosphoric acid or a salt thereof, is effective for making semiconductor surfaces free from harmful metallic impurities such as Fe, Al, Zn, etc.

Growing community of inventors

Saitama, Japan

Masahiko Kakizawa