Mitsubishi Heavy Industries Limited

Masahiko Inoue

Ryuichi Matsuda

Tadashi Shimazu

Kazuto Yoshida

Yuichi Kawano

Hitoshi Sakamoto

Toshihiko Nishimori

Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (), a process chamber () is supplied with an inert gas for carrying in and out the substrate (), pressure fluctuation in the process chamber () is adjusted to be within a prescribed range, and plasma () of the inert gas supplied in the process chamber () is generated. The density of the plasma () in the transfer area of the substrate () is reduced by controlling plasma power to be in a prescribed range, and the substrate () is carried in and out to and from a supporting table ().

Plasma processing apparatus and plasma processing method

A plasma film deposition apparatus (plasma processing apparatus) includes a second antennadisposed around an antennaand located outwardly of a ceiling surface. The second antennais supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antennaby a power supply. Lines of magnetic force F, heading in a direction opposite to the direction of lines of magnetic force Fappearing at the site of the antenna, are thereby generated at the site of the second antenna. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container

Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.

Plasma treatment method and plasma treatment device

The present invention attracts a wafer, placed on a susceptor, toward the susceptorby the electrostatic attractive power of an electrostatic chuck electrode, varies the output voltage of a variable direct current power sourcefor the electrostatic chuck electrodewhile measuring the temperature of the waferby a temperature detection sensor; and detects the potential of the waferbased on the output voltage of the variable direct current power sourceat a time when the temperature of the waferpeaks.

Method and device for measuring wafer potential or temperature

A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiHgas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiHgas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.

Plasma CVD apparatus

An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.

Growing community of inventors

Kobe, Japan

Masahiko Inoue