Toshiba Ceramics Co., Ltd.

Tokyo Electron Limited

Toshiba Kikai Co., Ltd.

Masahiko Ichishima

Eiichi Toya

Takashi Suzuki

Takanori Saito

Shinichi Mitani

Ken Nakao

Kazuhide Kawai

Makoto Takahashi

Yasumi Sasaki

Tadashi Ohashi

Takaaki Honda

Shunzo Shimai

Tomio Konn

Norihiko Saito

Hisaei Osanai

Tomohiro Nagata

Toshiyuki Makiya

Hiroyuki Honma

Takeshi Inaba

Hideo Uemoto

Shigeru Yamamura

Fumio Tokuoka

Masaki Shimada

Hiroaki Shitara

Toyokazu Matsuyama

Kouji Teraoka

Masatoshi Kasahara

Ritsurou Makita

Yoshio Kobayashi

Yuu Yokoyama

A plasma resistant member has a base material and a coating layer made of an YO, the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 &#x3bc;m or more and the YOof the coating layer contains solid solution Si ranging from 100 ppm to 1000 ppm.

Plasma resistant member

The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Ceramic member with fine protrusions on surface and method of producing the same

A carbon heater comprising heater members (11, 111, 121 . . . 161, 212, 222, 315, 325 . . . 345, 411, 515, 612) in which a plurality of carbon fiber bundles having a plurality of carbon fibers whose diameter is 5 to 15 .mu.m bundled are woven into a longitudinally elongated shape such as a wire shape or a tape shape and the impurity content is less than 10 ppm in ashes.

Carbon heater

A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.

Vapor phase growth apparatus

A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.

Electrode plate for plasma etching

Growing community of inventors

Aichi, Japan

Masahiko Ichishima