Hitachi, Ltd.

Tohoku University

Masahiko Ichimura

Tomihiro Hashizume

Toshiyuki Onogi

Satoshi Watanabe

Yasuo Wada

Yoshimasa A Ono

Hiromasa Takahashi

Yuji Suwa

Ryoko Sugano

Akihiko Kandori

Sadamichi Maekawa

Saburo Takahashi

Hiroshi Imamura

To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Magnetic detection device

A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Magnetic sensor, magnetic head, and magnetic memory by using spin Hall devices

The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.

Magnetic memory cell and magnetic memory device

Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.

Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom ( ), a second atom ( ) of the same kind as the first atom ( ), and a third atom (or atomic group) ( ) of the same kind as the first atom ( ) or of a kind different from that of the first atom ( ). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond ( ) is formed between the first atom or molecule and the third atom or molecule, a chemical bond ( ) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path ( ) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Ferromagnetic material and magnetic apparatus employing the ferromagnetic material

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (,), a second atom (,) of the same kind as the first atom (,), and a third atom (or atomic group) (,) of the same kind as the first atom (,) or of a kind different from that of the first atom (,). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (,) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (,) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (,) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

A ferromagnetic fine line has no loss of spontaneous magnetization even when fabricated ultra-small. The magnetization can be controlled by the proximity of the electrodes and the atomic level structure, and is protected from adsorption of impurities by embedding the ferromagnetic fine line in a nonmagnetic atomic layer.

Ferromagnetic fine line and magnetic apparatus thereof

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.

Growing community of inventors

Kokubunji, Japan

Masahiko Ichimura