Hamamatsu-photonics K.k.

Masahiko Honda

Harumichi Mori

Kazuki Fujita

Ryuji Kyushima

Junichi Sawada

Seiichiro Mizuno

Takuya Homme

Toshio Takabayashi

Takaharu Suzuki

Masahiro Suganuma

The present invention relates to a solid-state imaging device, etc. having a structure for capturing a high-resolution image even when any row selecting wiring is disconnected. The solid-state imaging device () comprises a photodetecting section (), a signal reading-out section (), a row selecting section (), a column selecting section (), an overflow preventing section (), and a controlling section (). The photodetecting section () has M&#xd7;N pixel portions Pto Ptwo-dimensionally arranged in a matrix of M rows and N columns, and each of the pixel portions Pto Pincludes a photodiode that generates charge of an amount according to an incident light intensity and a reading-out switch connected to the photodiode. Each of the N pixel portions Pto Pbelonging to an m-th row is connected to the row selecting section () and the overflow preventing section () by an m-th row selecting wiring L.

Solid imaging device and X-ray CT device including the solid imaging device

The solid-state imaging device comprises a photodetecting section having M&#xd7;N pixel portions Pto Ptwo-dimensionally arranged in a matrix of M rows and N columns. A pixel portion Pof the photodetecting section includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SWconnected to the photodiode PD. The photodetecting section includes plural dummy photodiodes PDarranged around one pixel portion without not completely surrounding the one pixel portion, and each dummy photodiode PDis provided in a region surrounded by any two pixel portions adjacent to one another.

Solid-state imager and X-ray CT apparatus including same

The present invention relates to a solid-state imaging device, etc., having a structure which enables to obtain an image with higher resolution by correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device () comprises a photodetecting section (), a signal reading-out section (), a controlling section (), and a correction processing section (). The photodetecting section () has M&#xd7;N pixel portions Pto Ptwo-dimensionally arrayed in M rows and N columns, and each of the pixel portions Pto Pincludes a photodiode which generates charges of an amount corresponding to an incident light intensity and a reading-out switch connected to the photodiode. Charges generated in each of the pixel portions Pto Pare inputted into an integrating circuit Sthrough a reading-out wiring L. A voltage value outputted from the integrating circuit Scorresponding to the amount of inputted charges is outputted to an output wiring Lthrough a holding circuit H. The correction processing section () applies correction processing to frame data repeatedly outputted from the signal reading-out section (), and then outputs the frame data after correction processing.

Solid-state imaging device and frame data correcting method which determine a voltage value corresponding to a pixel portion in frame data

The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. A pixel portion Pof the photodetecting section () includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SWconnected to the photodiode PD. The pixel portion Poccupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SWis formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2&#xd7;2 pixel portions adjacent to one another, a dummy photodiode PDsurrounded by the channel stopper CS is formed.

For a solid-state image pickup device, a plurality of pixels are two dimensionally arranged in an imaging region, and two photodiodes PDand PDare included in each pixel P. An electric charge generated in the respective photodiodes PDand PDis input to a signal readout section, and a voltage according to an electric charge amount thereof is output from the signal output section. The voltage output from the signal readout sectionis input to an A/D converting section, and a digital value according to the input voltage is output from the A/D converting section. In an adding section, a sum of digital values to be output from the A/D converting sectionaccording to the amount of electric charge generated, for each pixel Pof the imaging region, in the two respective photodiodes PDand PDincluded in the pixel is operated, and a digital value being a sum value thereof is output.

Solid-state imaging device

The present invention relates to a solid-state imaging device, etc., which makes it possible to obtain an image with higher resolution by properly correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device () comprises a photodetecting section (), a signal reading-out section (), a controlling section (), and a correction processing section (). In the photodetecting section (), M&#xd7;N pixel portions Pto Pare two-dimensionally arrayed in a matrix of M rows and N columns, and each of the pixel portions Pto Pincludes a photodiode and a reading-out switch. Charges generated in each pixel portion Pare inputted into an integrating circuit Sthrough a reading-out wiring L, and a voltage value corresponding to the amount of charges is outputted from the integrating circuit S. The voltage value from the integrating circuit Sis outputted to an output wiring Lthrough a holding circuit H. In the correction processing section (), correction processing is applied to frame data repeatedly outputted from the signal reading-out section (), and the frame data after correction is outputted.

Solid-state imaging device and frame data correcting method

A solid state imaging deviceincludes a photodetecting section, a signal readout section, a controlling section, and a correction processing section. In the photodetecting section, M&#xd7;N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pare input into an integration circuit S, through a readout wiring L, and a voltage value output corresponding to the charge amount from the integration circuit Sis output to an output wiring Lthrough a holding circuit H. In the correction processing section, correction processing is performed for frame data repeatedly output from the signal readout section, and frame data after being subjected to the correction processing is output.

Solid state imaging device

A solid state imaging deviceincludes a photodetecting section, a signal readout section, a controlling section, and a correction processing section. In the photodetecting section, M&#xd7;N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pare input into an integration circuit Sthrough a readout wiring L, and a voltage value output corresponding to the charge amount from the integration circuit Sis output to an output wiring Lthrough a holding circuit H. In the correction processing section, correction processing is performed for frame data repeatedly output from the signal readout section, and frame data after being subjected to the correction processing is output.

A solid state imaging deviceincludes a photodetecting section including M&#xd7;N pixel portions Pto Ptwo-dimensionally arrayed in M rows and N columns, a signal readout section including integrating circuits Sto Sand holding circuits Hto H, and an initialization section including initialization switches SWto SW. In response to a discharging control signal Reset, discharge switches SWin the integrating circuits Sare temporarily closed and then opened, and thereafter, in response to an m-th row selecting control signal Vsel(m), the readout switches SWof the pixel portions Pof the m-th row are closed for a first period. In this first period, in response to a hold control signal Hold, the input switches SWof the holding circuits Hare switched from a closed state to an open state, and thereafter, in response to an initializing control signal Init, the initialization switches SWare closed for a second period.

Wiring substratesandare positioned on a fixed basein a manner such that there is a step between the wiring substrates, and radiation imaging elementsand, respectively having scintillatorsanddeposited on photosensitive portionsand, are respectively mounted on the wiring substratesand. The radiation imaging elementis positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element, and the photosensitive portionof the radiation imaging elementand the photosensitive portionof the radiation imaging elementare juxtaposed to a degree to which the portions do not overlap. The photosensitive portionof the radiation imaging elementextends close to an edge at the radiation imaging elementside and the scintillatorof substantially uniform thickness is formed up to this position.

Radiation image device

There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pin the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor Tfor outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor Tfor inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T; a discharging transistor Tfor discharging the charges of the capacitive element C; and a selecting transistor Tfor selectively outputting a voltage value output from the amplifying transistor Tto a wiring L.

Solid-state image pickup device

Radiation imaging device

A radiographic imaging apparatushas a solid-state image sensor, a scintillator, and others. The solid-state image sensorhas a photosensitive sectionand an amplification section, which are formed on one side of an Si substrate. The photosensitive sectionincludes a plurality of photodiodesas photoelectric converters for photoelectric conversion, and these photodiodesare arrayed in a two-dimensional pattern. The amplification sectionamplifies outputs from the photodiodesand outputs amplified signals. The scintillatoris arranged to cover a region where the photosensitive sectionand the amplification sectionare formed on the one side of Si substrate, and is formed directly on the region.

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Hamamatsu, Japan

Masahiko Honda