Semiconductor Energy Laboratory Co., Ltd.

Masahiko Hayakawa

Shunpei Yamazaki

Mitsuaki Osame

Jun Koyama

Satoshi Murakami

Aya Anzai

Satoshi Teramoto

Yasushi Ogata

Kiyoshi Kato

Hiroshi Shibata

Hisashi Ohtani

Makoto Udagawa

Koichiro Tanaka

Hidekazu Miyairi

Atsuo Isobe

Akihisa Shimomura

Toshiji Hamatani

Tatsuya Arao

Koji Dairiki

Mai Akiba

Chiho Kokubo

Shinpei Matsuda

Mitsunori Sakama

Kenichi Wakimoto

Taketomi Asami

Hiroyuki Miyake

Keisuke Miyagawa

Satoshi Toriumi

Yukari Ando

Yasuyuki Arai

Yoshifumi Tanada

Daisuke Matsubayashi

Ryota Fukumoto

Junichiro Sakata

Kenichi Okazaki

Tatsuya Honda

Yu Yamazaki

Saishi Fujikawa

Shuhei Yoshitomi

Hiroyuki Tomatsu

Hajime Kimura

Toru Takayama

Masashi Tsubuku

Hiroki Adachi

Miyuki Hosoba

Ritsuko Kawasaki

Naoya Sakamoto

Takashi Hirosue

Satoshi Seo

Junichi Koezuka

Yukinori Shima

Yasuharu Hosaka

Koichiro Kamata

Hidehito Kitakado

Hiroko Abe

Takashi Hamochi

Toshimitsu Obonai

Suzunosuke Hiraishi

Satoshi Shinohara

Kengo Akimoto

Hideaki Shishido

Konami Izumi

Takahiro Tsuji

Etsuko Asano

Osamu Fukuoka

Yoshiharu Hirakata

Toshimitsu Konuma

Daisuke Kubota

Yutaka Shionoiri

Hideki Uochi

Kouhei Toyotaka

Masashi Oota

Noritaka Ishihara

Tatsuji Nishijima

Yosuke Tsukamoto

Junya Goto

Haruyuki Baba

Ritsuko Nagao

Hiromi Sawai

Akio Suzuki

Yu Kojima

Takahiro Tuji

Yuta Moriya

Yasuhiko Takemura

Akiharu Miyanaga

Hisao Ikeda

Yasutaka Nakazawa

Takashi Hamada

Tomoyuki Iwabuchi

Masahiro Katayama

Ryo Tokumaru

Seiko Inoue

Masatoshi Yokoyama

Shunsuke Koshioka

Shinya Okano

Takashi Hirosure

Yoshiko Ikeda

When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×10atoms/cmor lower.

Semiconductor device and manufacturing method thereof

To reduce power consumption of a display device with the use of a simple structure and a simple operation. The display device includes an input device. Input of an image signal to a driver circuit is controlled in accordance with an image operation signal output from the input device. Specifically, input of image signals at the time when the input device is not operated is less frequent than that at the time when the input device is operated. Accordingly, display degradation (deterioration of display quality) caused when the display device is used can be prevented and power consumed when the display device is not used can be reduced.

Display device

When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1&#xd7;10atoms/cmor lower.

Semiconductor device

To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Semiconductor display device

The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

Light emitting device

A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high Vis applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

Light-emitting device

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Semiconductor device and semiconductor device production system

A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1&#xd7;10molecules/cmby thermal desorption spectroscopy.

Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module

A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

Semiconductor element and display device using the same

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Kanagawa, Japan

Masahiko Hayakawa