Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Screen Semiconductor Solutions Co., Ltd.

Sokudo Co., Ltd.

Masahiko Harumoto

Yuji Tanaka

Masaya Asai

Koji Kaneyama

Chisayo Nakayama

Masakazu Sanada

Tadashi Miyagi

Yasuhiro Fukumoto

Tomohiro Matsuo

Hiroshi Kobayashi

Yukihiko Inagaki

Minobu Matsunaga

Akihiro Hisai

Akira Yamaguchi

Takeharu Ishii

Takuya Kuroda

Minoru Sugiyama

Takafumi Oki

You Arisawa

Akihiko Morita

Takahiro Yamada

Osamu Tamada

Akiko Tanaka

Kayoko Nakano

Tomohiro Motono

Shuji Miyamoto

Chisayo Mori

Sadayasu Suyama

A coating liquid containing metal as a metal-containing coating liquid is supplied to a surface to be processed of a substrate by a coating processing unit, whereby a metal-containing coating film is formed on the surface to be processed. The substrate on which the metal-containing coating film has been formed is transported to a metal removal unit by a transport mechanism. A removal liquid for dissolving the metal is supplied to a peripheral portion of the substrate by the metal removal unit such that the metal-containing coating film remains in a region except for the peripheral portion of the surface to be processed of the substrate.

Substrate processing method

A nozzle is stored in a nozzle storage hole of a waiting pod. In this state, a cleaning liquid is discharged to an outer peripheral surface of the nozzle from a plurality of discharge ports. Thus, a coating liquid and its solidified matter adhering to the nozzle are dissolved and removed from the nozzle. Subsequently, a metal removal liquid is discharged from a plurality of discharge ports to the outer peripheral surface of the nozzle. Thus, a metallic component remaining on the nozzle is dissolved and removed from the nozzle. Further, pure water is discharged to the outer peripheral surface of the nozzle from the plurality of discharge ports, and the metal removal liquid adhering to the nozzle is cleaned away.

Film processing method

Substrate processing apparatus, film formation unit, substrate processing method and film formation method

An exposure device has a cylindrical peripheral wall member. The peripheral wall member forms a processing space in which a substrate is storable and has an upper opening and a lower opening. Further, a light emitter is provided in an upper portion of the peripheral wall member to close the upper opening. A lower lid member that is provided to be movable in an up-and-down direction and configured to be capable of closing and opening the lower opening is provided below the peripheral wall member. The atmosphere in the processing space is replaced with an inert gas with the substrate stored in the processing space and the lower opening closed by the lower lid member. In this state, vacuum ultraviolet rays are emitted to the substrate from the light emitter, and the substrate is exposed.

Exposure device

A substrate processing apparatus includes a development processor and a reversal film former, and processes a substrate having one surface on which a resist film made of a photosensitive material is formed. The development processor forms a resist pattern on the one surface of the substrate by performing development processing on a resist film using a development liquid. A reversal film former forms a reversal film having etch resistance higher than that of the resist film on the one surface of the substrate to cover the resist pattern while regulating a temperature of the substrate in a certain range after the development processing is performed by the development processor.

Substrate processing apparatus and substrate processing method

An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.

Substrate treating method

Film processing unit and substrate processing apparatus

Exhaust of gas in the processing chamber is started by a gas exhaust section, and supply of an inert gas into the processing chamber is started by a gas supply section after a predetermined time length has elapsed since the exhaust of gas is started. Alternatively, the gas in the processing chamber in which a substrate is stored is exhausted by the gas exhaust section, the inert gas is supplied into the processing chamber by the gas supply section, and the pressure in a light emitter that has a light-transmitting plate is allowed to match or be close to the pressure in the processing chamber. The substrate in the processing chamber is irradiated with vacuum ultraviolet rays by the light emitter with an oxygen concentration in the gas in the processing chamber lowered to a predetermined concentration. Thus, the substrate is exposed.

Exposure device, substrate processing apparatus, exposure method and substrate processing method

Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of performing exhaust of gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, and a heat treating step of performing the heat treatment of the substrate in the heat treating space.

Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.

Substrate treating method and apparatus used therefor

A substrate is held and rotated by a spin chuck, and a coating liquid is discharged to the substrate. The coating liquid that is splashed outwardly from the substrate is received by an outer cup. A cleaning liquid that has been discharged from a cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a first guide to clean the outer cup. Thus, the coating liquid, its solidified matter and the like adhering to the outer cup are dissolved and removed from the outer cup. Subsequently, a metal removal liquid that has been discharged from the cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a second guide. Thus, a metallic component remaining on the outer cup is dissolved and removed from the outer cup.

Film processing unit, substrate processing apparatus and substrate processing method

A substrate on which a processing film made of a directed self-assembly material is formed is placed on a holding plate incorporating a preheating mechanism, and is preheated. A low oxygen atmosphere surrounds the substrate. A preheating temperature is a temperature at which the directed self-assembly material comprised of two types of polymers is phase-separated. By preheating the processing film, the two types of polymers are phase-separated to form a fine pattern. The processing film is irradiated with flashes of light from flash lamps while being preheated. This increases the fluidity of the polymers constituting the processing film to achieve the formation of a fine pattern while suppressing the occurrence of defects.

Method for processing substrate

A heating plate is stored in a chamber. With a solvent containing gas present in the chamber, a substrate on which a DSA film is formed is held at a position further upward than the heating plate. Thus, neutralization of an atmosphere is performed at a temperature at which microphase separation does not occur. Thereafter, with the solvent containing gas present in the chamber, the substrate is held on an upper surface of the heating plate. Thus, thermal processing is performed on the DSA film on the substrate.

Thermal processing device, substrate processing apparatus, thermal processing method and substrate processing method

A substrate having a film of a coating liquid containing metal is held by a spin chuck, the film having been exposed in a predetermined pattern. A slit nozzle supplies a development liquid to a surface to be processed of the substrate supported by the spin chuck. A cleaning liquid for removing or dissolving metal is supplied by a cleaning nozzle to the surface to be processed of the substrate to which the development liquid has been supplied.

Development unit, substrate processing apparatus, development method and substrate processing method

In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

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Kyoto, Japan

Masahiko Harumoto