Nissin Electric Co., Ltd.

Masahiko Aoki

Naoto Okazaki

Yasuhiro Matsuda

Masayasu Tanjyo

Masashi Konishi

A large-area ion beam having a one-directionally long section is generated in a magnetically shielded ion source. The ion beam is bent evenly to form a large center angle of about 90 degrees in the direction of the short side by a window/frame type magnet having a large gap and having left and right frames each wound with a plurality of coils. Then, the ion beam is made to pass through a slit plate having a one-directionally long opening so that unnecessary ions are removed. The ion beam is then radiated onto a subject which makes a translational motion in the direction of the short side of the beam.

Method and apparatus for deflecting charged particles

A surface analyzer for analyzing the atomic composition of the surface of sample. An ion source generates a proton beam. A magnet directs the proton beam through an accelerating device toward the sample for collision therewith. Protons that are scattered at an angle of 180.degree. pass through the accelerating device in the reverse direction and are decelerated. The magnet directs the protons as a parallel beam to a position detecting device that indicates the position at which the proton beam strikes and energy loss of the protons can be determined.

Surface analyzer for determining the energy distribution of scattered

A surface analyzer for analyzing physical properties of the surface of a sample by means of PELS (Proton energy loss spectroscopy) in which accelerated ion beams such as proton beams impinge on the sample in the vertical direction to the surface of the sample and ion beams scattered from the sample are decelerated and then detected by an analyzer to analyze the energy loss of the ion beams. The surface analyzer comprises an ion beam source for generating ion beams, deflecting means for deflecting the ion beams from the ion beam source, irradiating the surface of the sample with the ion beams from the ion beam source in the vertical direction to the surface of the sample, and deflecting scattered ion beams from the sample, accelerating and decelerating means for accelerating the ion beams before the ion beams impinge on the sample and decelerating the scattered ion beams, and analyzing means for detecting the scattered beams and analyzing energy loss of the ion beams.

Surface analyzer

An apparatus for ion and vapor deposition comprises an ion implantation assembly including an ion source, a power supply for the ion source and an accelerator-injector for implanting ions from the ion source, a film forming assembly including an evaporation source and a power supply for the evaporation source, and a control assembly for controlling the two assemblies. The control assembly comprises means for maintaining ion implantation and vapor deposition in a specified ratio at all times when ion implantation and vapor deposition are effected at the same time and, which assures that ion implantation and vapor deposition are effected at the same time in a specified ratio to form a thin film of good quality and strong adhesion.

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Kyoto, Japan

Masahiko Aoki