Hitachi, Ltd.

Hitachi-high-technologies Corporation

Torotrak (development) Limited

Kk Equos Research

Tokyo Process Service Co., Ltd.

Allison Transmission, Inc.

Masahiko Ando

Masatoshi Wakagi

Hiroshi Sasaki

Masahiro Kawasaki

Takeo Shiba

Tomihiro Hashizume

Masaaki Fujimori

Sanato Nagata

Katsumi Kondo

Shinichi Komura

Masaya Adachi

Shingo Ishihara

Ritsuo Fukaya

Masuyuki Ota

Tadashi Okumura

Kazuhiko Yanagawa

Ikuo Hiyama

Osamu Itou

Tomohiro Inoue

Toshiki Kaneko

Tsunenori Yamamoto

Masuyuki Ohta

Makoto Tsumura

Yoshiharu Nagae

Junichi Hirakata

Tatsuya Sugita

Masahito Ohe

Yuji Mori

Kenichi Onisawa

Shuji Imazeki

Mitsuharu Tai

Tadashi Arai

Yuji Suwa

Norifumi Kameshiro

Tohru Sasaki

Takashi Naito

Masahiro Ishii

Hiromasa Takahashi

Makoto Yoneya

Masaaki Kitajima

Tomohiro Okada

Kazumichi Imai

Takashi Suzuki

Kyoko Imai

Kenzo Kurotsuchi

Naoshi Itabashi

Kazuyoshi Torii

Takanori Nakayama

Yoshimitsu Yanagawa

Kenta Imai

Seiichi Suzuki

Kazunori Yamamoto

Toshiro Saito

Tetsuro Minemura

Itaru Yanagi

Brian Joseph Dutson

Osamu Itoh

Shirun Ho

Akira Doi

Mitsutoshi Honda

Yoshihito Maeda

Kaga Hasegawa

Tetsuroh Minemura

Yasuhiro Ishihara

Hideo Nakako

Takeo c/o Hitachi Ltd Shiba

Yasushi Kumashiro

Provided is a computer system for generating a neural network (NN) used for a task including a training unit that calculates a weighting factor between a reservoir and an output layer using training data, a first storage unit that stores, as node activity information, information on a node activity level of a node included in the reservoir, and a second storage unit that stores model information. When receiving a training execution request for a second task after a training process of a first task is completed, the training unit calculates a weighting factor of the NN used for a third task obtained by combining the first task and the second task, updates the model information based on the calculated weighting factor, and updates the node activity information based on the node activity measured during execution of the training process of the third task.

Computer system and model training method

A technology that can enhance the computing performance of a computing system using reservoir computing (RC), includes a computing system which performs computation using a recurrent neural network (RNN) including an input unit, a reservoir unit, and an output unit. The reservoir unit includes a plurality of nodes circularly connected to each other. The circular connection has a weight matrix for determining a weight between the nodes of the plurality of nodes, in which a weight between the nodes closely arranged on the circle is larger than a weight between the nodes arranged away from each other on the circle. The plurality of nodes each have a g value that is a parameter for designating nonlinearity of an activation function of each of the nodes, and that is set so as to periodically change in a direction on the circle.

Computing system and method

A device includes an input unit, a nonlinear converter, and an output unit. The nonlinear converter and the output unit are connected via a connection path having a delay mechanism that realizes a feedback loop giving a delay to a signal. The delay mechanism includes a conversion mechanism that generates a plurality of signals with different delay times using the signal output from the nonlinear converter, generates a new signal by superimposing the plurality of signals, and outputs the generated signal to the output unit.

Device and computer realizing calculation of reservoir layer of reservoir computing

An object of the present invention is to provide an artificial olfactory sensing system capable of sniffing out various odors highly sensitively. The artificial olfactory sensing system includes: plural sensor cells on a lipid membrane of each of which olfactory receptors have developed; and plural ion-sensitive field-effect transistors (ISFETs) that correspondingly exist to the sensor cells on a one-on-one basis. A response signal showing that each of the olfactory receptors of each of the sensor cells has recognized an odor molecule is converted into an electric signal by an ISFET corresponding to each of the sensor cells.

Artificial olfactory sensing system

The present invention is intended to provide a method and a device for detecting a biomolecule with high sensitivity and high throughput over a wide dynamic range without requiring concentration adjustments of a sample in advance. The present invention specifically binds charge carriers to a detection target biomolecule, and detects the detection target biomolecule one by one by measuring a current change that occurs as the conjugate of the biomolecule and the charge carriers passes through a micropore. High-throughput detection of a biomolecule sample is possible with an array of detectors.

Biomolecule detection method, biomolecule detection device and analysis device

An I/O device management method of a computer system including a computer, an I/O device, an I/O switch assigning the I/O device to the computer, and a management computer of managing the I/O device, in which a process of the management processor includes a step of acquiring a piece of configuration information of the I/O device assigned to the computer, and a piece of configuration information of a network connected with I/O device, a step of acquiring a flow amount indicating an amount of a data transmitted and received via the I/O device for each I/O type, a step of determining the I/O device of changing an assignment to the computer based on the pieces of acquired information, and a step of issuing an assignment change instruction to the I/O switch.

I/O device management method, computer system, and I/O device management program product

A variator () having a pair of semi-toroidally recessed races () mounted to a housing () for rotation about a common variator axis. A roller () is mounted between the races to transfer drive between them at a variable drive ratio. A sun gear () is mounted between the races, as is a ring (gear). The ring gear is radially outboard of the sun gear. Mounted between the sun and ring and meshing with both is a carrier gear () upon which the roller is mounted in a manner which enables it to both spin about its own axis, when turned by the races, and also to tilt relative to the races to vary the drive ratio. A control pinion () is also arranged between the sun and ring gears meshing with both. The control pinion is able to rotate about its own axis freely, but the pinion axis is fixed with respect to the housing.

Continuously variable transmission

A liquid film applicator means can apply a photosensitive lyophobic filmto a substrate. An exposure unitis placed on the back side of the substrate and forms the lyophobic film applied on the substrate into a pattern in alignment with gate electrodes. A dropping unitdrops a test liquid to a surface of the substrate having a pattern of the lyophobic film formed by the exposure means. A measuring meansdetects the droplet dropped by the dropping unit. A determining means determines whether the pattern of the lyophobic film formed by the exposure means is proper or not based on the droplet detected by the detecting means.

Pattern manufacturing equipments, organic thin-film transistors and manufacturing methods for organic thin-film transistor

An electrode substrate in which a lower electrode and an upper electrode are well positioned by way of an insulating film could not be formed by a printing method since positional displacement is caused. The cost was increased outstandingly when using photomasks for positioning. In the present invention, positional displacement does not occur even when using the printing method since the upper electrode and the lower electrode are positioned in self-alignment. Accordingly, a semiconductor device such as a flexible substrate using an organic semiconductor can be formed with low cost by using the printing method.

Method of manufacturing a semiconductor device having an organic thin film transistor

In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.

Thin film transistor device, image display device and manufacturing method thereof

To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.

Field effect transistor and its manufacturing method

A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

Field effect transistor and manufacturing method thereof

The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.

Thin film transistor used as a switching element in an active matrix type liquid crystal display device

To increase productivity of organic thin-film transistors, in an organic thin-film transistor manufacturing equipment, a liquid containing at least either one of a wiring material and a semiconductor material is coated on a substrate to form a number of organic thin-film transistors. Substrate carrying means carry the substrate. The substrate is heated by a first heating means, and the temperature of the substrate is controlled by a controller. The liquid containing at least either one of the wiring material and the semiconductor material is heated by a second heating means, and the temperature of this liquid is controlled also by the controller.

Manufacturing method of organic thin-film transistors and equipment for manufacturing the same

Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.

Organic transistor using self-assembled monolayer

Growing community of inventors

Hitachinaka, Japan

Masahiko Ando