Tokyo Electron Limited

Shin-etsu Chemical Co., Ltd.

Tokyo Electron Limi Ted

Masahide Iwasaki

Toshihisa Nozawa

Toshihiko Iwao

Shinji Komoto

Satoshi Yonekura

Tomoaki Ukei

Naoki Matsumoto

Yohei Yamazawa

Koji Miyata

Jacques Faguet

Naohiko Okunishi

Toshihiro Hayami

Koji Yamagishi

Kazuyoshi Watanabe

Kohei Yamashita

Yuichi Sasaki

Junichi Takahira

Shinichi Komatsu

A film forming apparatus includes: a mounting table configured to place a substrate thereon and to be rotatable around an axis; a unit provided in a first region such that its bottom surface faces the mounting table and having first and second buffer spaces therein; and a flow rate controller that independently controls flow rates of a precursor gas supplied to the first and second buffer spaces. In the bottom surface, the unit includes: an inside injection section including injection ports communicated with the first buffer space and configured to inject the precursor gas supplied to the first buffer space; and an intermediate injection section including injection ports communicated with the second buffer space and configured to inject the precursor gas supplied to the second buffer space. All the first injection ports are provided at a location closer to the axis, as compared to the second injection ports.

Film forming apparatus and shower head

A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion.

Plasma process apparatus

A processing chamber accommodating a mounting table includes a first region and a second region. As the mounting table rotates, a substrate mounting region of the mounting table moves in a circumferential direction around the axis to pass through the first region and the second region. A first gas supply unit supplies a precursor gas to the first region from an injection unit disposed to face the mounting table. An exhaust outlet exhausts an exhaust port formed to extend along a closed path surrounding the exhaust outlet. A second gas supply unit supplies purge gas from an injection port formed to extend along a closed path surrounding the exhaust port. A plasma generation unit generates plasma from a reaction gas in the second region. An angular range of the second region is larger than an angular range of the first region.

Film formation device

Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Film forming apparatus

In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.

Film-forming apparatus

The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.

Plasma processing apparatus

Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter() coaxially accommodates a coil() within a cylindrical outer conductor, and a ring memberis coaxially installed between the coil() and the outer conductor. The ring-shaped membermay be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductorand made of a conductor such as cupper or aluminum and electrically connected with the outer conductorwhile electrically insulated from the coil().

A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

Plasma processing apparatus, plasma processing method, method for cleaning plasma processing apparatus and pressure control valve for plasma processing apparatus

A plasma processing apparatusincludes a processing chamber; a gas supply unitfor supplying a plasma processing gas into a processing chamber; a mounting tableconfigured to hold the target substrate W thereon; a plasma generating deviceconfigured to generate plasma within the processing chamber; and a gas supply device. The gas supply deviceincludes a head unitconfigured to move between a first position above the mounting tableand a second position different from the first position and to supply a gas, and the head unitis configured to supply a film forming gas to a small-volume region formed between the mounting tableand the head unitwhen the head unitis positioned at the first position and to adsorb the film forming gas on the target substrate W.

Plasma processing apparatus and gas supply device for plasma processing apparatus

A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

Method and system for performing different deposition processes within a single chamber

A plasma processing unit of the present invention includes a processing container whose inner pressure can be reduced, a first electrode arranged in the processing container, a process gas supplying unit that supplies a process gas into the processing container, a high-frequency electric power source that outputs high-frequency electric power having a frequency in a VHF band, a matching unit electrically connected to the high-frequency electric power source and the first electrode for impedance matching, and a transmission line that transmits the high-frequency electric power from the high-frequency electric power source to the matching unit. A substrate to be processed is adapted to be arranged in the processing container. The high-frequency electric power transmitted to the first electrode is adapted to generate plasma in such a manner that the substrate to be processed can undergo a plasma process by means of the plasma. The transmission line has a length shorter than a length wherein a resonance state of a third harmonic wave of the high-frequency electric power may be generated.

Plasma processing unit and high-frequency electric power supplying unit

A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.

Growing community of inventors

Miyagi, Japan

Masahide Iwasaki