Nissan Motor Company Limited

Nec Corporation

Nec Electronics Corporation

Canon Kabushiki Kaisha

Renesas Electronics Corporation

Kabushiki Kaisha Kobe Seiko Sho

The University of Tokyo

Nippon Steel & Sumitomo Metal Corporation

Masaharu Sato

Naoto Fukushima

Itaru Fujimura

Yohsuke Akatsu

Kensuke Fukuyama

Yukio Fukunaga

Yosuke Akatsu

Sunao Hano

Takaaki Uno

Koji Hio

Yasutaka Nakashiba

Takashi Saito

Masayuki Furumiya

Hiroaki Ohkubo

Kenji Goto

Kuniko Kikuta

Hiroshi Nishihara

Ryoji Sato

Takayuki Jinno

Keiichiro Kata

Ryota Yamamoto

Akira Shibasaki

Sho Yamanaka

Shuichi Matsuda

Makoto Nakayama

Mariko Miyachi

Tokuji Maruyama

Kazuo Ikemoto

Yoshiya Sakai

Yasuhiro Nagai

Kouichi Sawahata

Chika Fujiwara

Tetsuo Suga

Takaaki Ogasawara

Kohji Kohno

Yukio Hida

Takuo Uehara

Yoshitsugu Okanaka

Yoshiki Tsuda

Tomonobu Shiraishi

Motokuni Itakusu

An information processing apparatus includes one or more memories and one or more processors. The one or more processors and the one or more memories are configured to acquire material appearance information including specular reflection information, convert the specular reflection information to an intensity of perception in accordance with visual characteristics for a gloss intensity, and resample the intensity of perception.

Information processing apparatus, information processing method, and storage medium

An apparatus includes a first acquisition unit configured to acquire specular reflection information about specular reflection light on an object, a second acquisition unit configured to acquire diffuse reflection information about diffuse reflection light on the object, and a compression unit configured to compress the diffuse reflection information based on the specular reflection information.

Apparatus, method, and storage medium for compressing data about texture of an object

To provide a negative electrode for a secondary battery and a secondary battery having a large energy density and a capacity less likely to reduce even after repeated charging and discharging, and manufacturing methods thereof. The above-described problem is solved by a negative electrode for a secondary battery () comprising a negative electrode active material layer (') including at least a silicon-based active material and a binder, and a negative electrode current collector () having a structural form in which the silicon-based active material has an amorphous region including lithium and island-shaped lithium carbonate is distributed in the amorphous region. This negative electrode for a secondary battery () is manufactured by a method including a step of forming a negative electrode active material layer (&#x2032;) including a Si-based active material and a binder, and a predoping step of bringing an electrolytic solution () containing Li into contact with the negative electrode active material layer (&#x2032;), applying pressure, and introducing Li ions by an electrochemical method.

Negative electrode for secondary battery, secondary battery, and manufacturing methods thereof

Disclosed are a fibrous insulation block which can improve work efficiency of lining construction in various types of refractory furnace in iron works, and a construction method for a heated furnace-surface lining using the same. Specifically disclosed is a fibrous insulation block which comprises: a unit block () formed by laminating fibrous insulation blankets under pressure; a packing material () which has a pressing surface abutting section () covering at least a part of each pressing surface () which are the side surfaces of the unit block in the direction in which the blankets are laminated, and a heating surface protection section () connected to the pressing surface abutting section so as to cover at least a part of a heating surface () of the unit block, and in which a boundary section () between the pressing surface abutting section and the heating surface protection section covers an angle section formed by the pressing surfaces and the heating surface of the unit block; and a binding band () which maintains the shape of the unit block () using the packing material (). The heating surface protection section () of the packing material () can be moved by the removal of the binding band and disposed on the same plane as the pressing surface abutting section, and has handhold sections () provided therein.

Fibrous heat-insulating block and method for lining heated furnace-surface using same

A first first-conductivity-type diffusion layer, a first second-conductivity-type diffusion layer, a second first-conductivity-type diffusion layer, and a second second-conductivity-type diffusion layer are arranged in this order. In a region where the second second-conductivity-type diffusion layer and the first-conductivity-type layer are in contact with each other, impurity concentrations thereof are higher in a part in contact with a side face of the second second-conductivity-type diffusion layer than in a part at a bottom surface of the second second-conductivity-type diffusion layer.

Semiconductor device

In conventional processes, a recombination rate of minority carrier accumulated between a diffusion layer of an anode and a diffusion layer of a cathode cannot be enhanced. An interlayer insulating filmis formed on a semiconductor substrate. An opening(first opening), an opening(second opening) and an openingare formed in the interlayer insulating film. The openingand the openingare formed above respective the p-type diffusion layerand the n-type diffusion layer. The openingis formed above the gap region that is a region between the p-type diffusion layerand the n-type diffusion layer. A contact plug, a contact plugand a contact plugare embedded in the opening, the openingand the openingrespectively. Both regions of the semiconductor substratelocated under the openingamong and located under the openingare doped with an impurity.

Semiconductor device and method for manufacturing same

An electrostatic protective circuit includes a bipolar transistor, a bipolar transistor and an FET. The bipolar transistors and are coupled in series between a signal line and the ground (GND). The FET is configured that a source and a bulk thereof are coupled to a node N situated between the bipolar transistors, a gate is coupled to the signal line, and a drain is coupled to the power supply.

Electrostatic protective circuit and semiconductor device

A semiconductor device includes a pair of transistors formed in a first conductive type semiconductor substrate. Each of the transistors contains a collector region of a second conductive type, opposite to the first conductive type, formed in the semiconductor substrate, a base region of the first conductive type formed in the collector region, and an emitter region of the second conductive type formed in the base region, the collector region of one transistor of the pair of transistors being separated from that of the other transistor. The semiconductor device further includes a first region of the first conductive type formed between the collector regions of the pair of transistors, and a buried layer of the second conductive type formed in the semiconductor substrate under the collector region of one transistor of the pair of transistors to connect the collector regions of the transistors therethrough.

Semiconductor device having two bipolar transistors constituting electrostatic protective element

On a silicon substrate, a first insulation layer, a lower conductive layer, a capacitor-insulator layer, and an upper conductive layer are formed in that order. Then, a first resist pattern is formed, the upper conductive layer is etched to form an upper electrode, and the capacitor-insulator layer is successively etched partway under the same etching condition as that of the upper conductive layer. Next, second resist pattern is formed, the remaining part of the capacitor-insulator layer is etched to form a second insulation layer, and the lower conductive layer is successively etched under the same etching condition as that of the capacitor-insulator layer so as to form a lower electrode and a lower wiring. In this manner, an MiM capacitor element constituted by the upper electrode, a part of the second insulation layer, and the lower electrode can be fabricated.

Semiconductor device and fabrication method thereof

An electromagnetic suspension apparatus for an automotive vehicle, employs an electromagnetic actuator interleaved between a sprung mass and an unsprung mass and arranged in parallel with a suspension spring element, and an electric motor built in the electromagnetic actuator for driving the electromagnetic actuator. A motor controller calculates a displacement input, such as a suspension stroke acceleration and a suspension velocity, transmitted to the electromagnetic actuator, and controls the motor to bring a suspension damping force closer to a desired damping force suited for the displacement input. The motor controller calculates an internal inertia force of the electromagnetic actuator, and corrects or compensates for a motor output by the internal inertia force of the electromagnetic actuator.

Electromagnetic suspension apparatus for automotive vehicles and method for controlling electric motor of the same

An electromagnetic suspension system for a vehicle, comprises an electromagnetic actuator interposed between a sprung mass and an unsprung mass and disposed substantially in parallel with an spring element. An electric motor is provided for driving the electromagnetic actuator. A motor controller is configured to calculate a displacement input applied to the electromagnetic actuator and to control the electric motor in a manner that the electromagnetic actuator generates an optimum damping force corresponding to the displacement input. A motor control circuit is provided for the electric motor, through which the electric motor is connected to the motor controller. Additionally, an electrical damping element is electrically connected to the motor control circuit and in parallel with the electric motor to generate a damping force in a passive manner under a dynamic braking of the electric motor in response to the displacement input to the electromagnetic actuator from the unsprung mass.

Electromagnetic suspension system for vehicle

An infrared ray test for a semiconductor chip is conducted by irradiating infrared ray onto a bottom surface of a semiconductor chip, receiving the infrared ray reflected from a bonding pad and displaying the image of the bonding pad on a monitor. The image obtained from the infrared ray has information whether the bonding pad itself or a portion of the silicon substrate underlying the bonding pad has a defect or whether or not there is a deviation of the bonding pad with respect to the bump.

Method for inspecting semiconductor chip bonding pads using infrared rays

The invention provides a high speed sense amplifier of the current detection type employing NPN transistors used for a static operation type RAM which allows high integration and can suppress increase of power dissipation and deterioration in speed even in a high integration condition. Pairs of bit lines to which data of memory cells of a static type RAM are connected are connected to a pair of common data lines through MOS transistors, and the emitter terminals of a pair of bipolar transistors are connected to the data lines while the collector terminals which serve as signal output terminals of the sense amplifier are connected to a first power supply through resistors and the base terminals are connected to a second power supply. Further, a pair of resistance elements for normally supplying current to the sense amplifier therethrough are connected to the emitter terminals of the bipolar transistors.

Current detection type sense amplifier

A clocked master slave flip flop circuit includes a current mirror circuit with a pair of field effect transistors serving as a constant current source, and the field effect transistors are gated by a clock signal and a complementary clock signal; and the clocked master slave flip flop circuit further includes a built-in logic circuits achieving logic functions inverse to each other, and one the built-in logic circuits and the other field effect transistor are connected in series of one of the field effect transistors and in parallel to the other field effect transistor; the logic circuits are responsive to a clock control signal so as to enable the constant current source, and causes the clocked master slave flip flop circuit to change or maintain a data bit stored therein.

Clocked flip flop circuit with built-in clock controller and frequency

An active suspension system is provided which includes hydraulic cylinders for suppressing rolling motion of a vehicle body. The system is responsive to lateral acceleration acting on the vehicle body to provide a control signal for supplying hydraulic pressure to the cylinders for anti-rolling control. The control signal includes first and second pressure control signals. The first pressure control signal commands supply of hydraulic pressure for providing an anti-rolling moment, while the second pressure control signal commands supply of hydraulic pressure for supporting a portion of the static load of the vehicle body to maintain the vehicle body at a target height level. The system is further responsive to increase in lateral acceleration to modify the second pressure control signal to reduce the hydraulic pressure for supporting the portion of static load, thereby compensating for forces acting to raise the vehicle body caused by the anti-rolling control for establishing a constant vehicular height level irrespective of variation in the lateral acceleration acting on the vehicle body.

Automotive active suspension system for regulating vehicular height

Growing community of inventors

Kanagawa, Japan

Masaharu Sato