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National Institute of Advanced Industrial Science and Technology

Semiconductor Technology Academic Research Center

Gunma University

Nisshinbo Holdings Inc.

Masaharu Oshima

Hiroyuki Akinaga

Masaki Mizuguchi

Kazuo Saito

Hiroshi Fujioka

Takeaki Kishimoto

Seizo Miyata

Jun-ichi Ozaki

Haruhiko Takahashi

Masaki Yoshimaru

Koji Usuda

Shogo Moriya

Kyosuke Iida

Ziyuan Liu

Liu Guo-lin

Kazuto Ikeda

A carbon catalyst which has high catalytic activity and can achieve high catalyst performance is provided. The carbon catalyst comprises nitrogen. The energy peak area ratio of the first nitrogen atom whose electron in the 1s orbital has a binding energy of 398.5&#xb1;1.0 eV to the second nitrogen atom whose electron in the 1s orbital has a binding energy of 401&#xb1;1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the nitrogen introduced into the catalyst is 1.2 or less.

Carbon catalyst, method for producing carbon catalyst, fuel cell, electricity storage device, and use of carbon catalyst

A magneto-resistance effect device () includes a semiconductor region () having a surface provided with a plurality of isolated metal micro-particles () of not more than 100 &#x3bc;m disposed at intervals of not more than 1 &#x3bc;m, a semiconductor or half-metal cap layer () for covering the semiconductor region and a plurality of electrodes () disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device () has various excellent characteristics.

Magnetoresistance effect device and magnetism sensor using the same

A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Method of manufacturing an insulating film containing hafnium

A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300&deg; C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Magnetoresistance effect film and method of forming same

Evaluating electrical properties of a semiconductor device by measuring and analyzing a junction capacitance of a semiconductor provided in the semiconductor device and a transient change of the junction capacitance while applying an X-ray beam to the semiconductor device intermittently, and evaluating a structure and electron states of the semiconductor by measuring and analyzing an energy spectrum of an X-ray beam absorbed into an element present in the semiconductor while applying an X-ray beam to the semiconductor device continuously.

Evaluation method and evaluation apparatus for semiconductor device

Growing community of inventors

Tokyo, Japan

Masaharu Oshima