Sumco Corporation

Kyushu University

Sumitomo Mitsubishi Silicon Corporation

Masaharu Ninomiya

Koji Matsumoto

Masanobu Miyao

Masahiko Nakamae

Ichiro Shiono

Hazumu Kougami

Akihiko Endo

Yasuo Koike

Etsurou Morita

Shinsuke Sadamitsu

Taizoh Sadoh

Tomoyuki Hora

Takeshi Kii

A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere.

Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer

A strained Si&#x2014;SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layeron an SOI substratehaving an Si layerand a buried oxide film; forming protective filmson the surface of the SiGe mixed crystal layer; implanting light element ions into a vicinity of the interface between the Si layerand the buried oxide film; performing a first heat treatment at a temperature in the range of 400 to 1000&#xb0; C.; performing a second heat treatment at a temperature not lower than 1050&#xb0; C. under an oxidizing atmosphere; performing a third heat treatment at a temperature not lower than 1050&#xb0; C. under an inert atmosphere; removing the Si oxide filmformed on the surface; and forming a strained Si layer

Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same

A method for manufacturing a semiconductor wafer with a strained Si layer having sufficient tensile strain and few crystal defects, while achieving a relatively simple layered structure, is provided. The method includes the steps of: (a) forming an SiGe mixed crystal layerand a first Si layerin this order on the surface of a silicon wafer; (b) forming an SiOlayeron top of the first Si layer and/or a support wafer; (c) forming a layered productby stacking the silicon wafer and the support wafer with the SiOlayer being placed therebetween; (d) forming a second Si layerby thinning the silicon wafer of the layered product; (e) implanting hydrogen ion and/or rare gas ion, such that ionic concentration peaks in a predetermined area; (f) subjecting the layered product to a first heat treatment; and (g) carrying out a second heat treatment following the first heat treatment, thereby relaxing the SiGe mixed crystal layer and diffusing Ge through portions of the first Si layer and the second Si layer.

Method for manufacturing semiconductor wafer including a strained silicon layer

A semiconductor substrate manufacturing method has a first layer formation process, a second layer formation process, a heat treatment process, and a polishing process; in the first layer formation process, the thickness of the first SiGe layer is set to less than twice the critical thickness, which is the film thickness at which dislocations appear and lattice relaxation occurs due to increasing film thickness; in the second layer formation process, the Ge composition ratio of the second SiGe layer is at least at the contact face with the first SiGe layer or with the Si layer, set lower than the maximum value of the Ge composition ratio in the first SiGe layer, and moreover, a gradient composition region in at least a portion of which the Ge composition ratio increases gradually toward the surface is formed. By this means, the penetrating dislocation density is kept low, surface roughness is low, and worsening of roughness at the surface and at interfaces due to heat treatment in device manufacturing processes or similar is prevented.

Semiconductor substrate and field-effect transistor, and manufacturing method for same

In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradient composition layer of which a Ge composition ratio is gradually increased from a Ge composition ratio of a base material and a process of epitaxially growing a SiGe constant-composition layer on the gradient composition layer at a final Ge composition ratio of the gradient composition layer, thereby depositing a SiGe layer of which a Ge composition ratio changes in a film deposition direction, in a step-like manner with a gradient, a heat treatment step of performing heat treatment at a temperature exceeding a temperature of the epitaxial growth either during or after formation of the SiGe layer, and a polishing step of polishing to remove irregularities on a surface of the SiGe layer which arise in the heat treatment after formation of the SiGe layer are included.

Method for producing semiconductor substrate, method for producing field effect transistor, semiconductor substrate, and field effect transistor

Growing community of inventors

Tokyo, Japan

Masaharu Ninomiya