Fuji Electric Co., Ltd.

Fuji Electric Corporate Research and Developement Ltd.

Masaharu Namba

Toyoki Kazama

Hideki Kina

Kazuo Mukae

Ikuo Nagasawa

Mitsuru Yamauchi

Toshiyuji Iijima

Eizo Tanabe

In the specific embodiments described herein, the charge drop resulting from fatigue in an electrophotographic process using an a-Se:H photosensitive member is reduced by a stabilization exposure carried out for one to three cycles prior to use of the member for image formation. Longer wavelength light may be used for the stabilization exposure and shorter wavelength light may be used for the imaging and discharge steps.

Electrophotographic process

Disclosed is an production method for plasma chemical vapor deposition (CVD) of amorphous silicon films providing improved throughput and film yield. According to the present invention, a glow discharge is generated in a reaction chamber containing a gaseous silicon-containing compound, such as monosilane (SiH.sub.4) or tetraflourosilane (SiF.sub.4), by the imposition of an electric field between a pair of spaced-apart electrodes within the chamber. The electric field is established by connecting an appropriate DC or high frequency driving voltage to one of the pair of electrodes and ground potential to the other. In the case where a high frequency driving voltage is used, connection to the driven electrode is made through a coupling capacitor, and the frequency of the driving voltage is selected such that a DC potential develops between the pair of electrodes. Substrates on which amorphous silicon films are to be deposited are positioned adjacent to each one of the electrodes, and the connections for the driving voltage and ground to the electrodes are periodically reversed during film deposition. In an alternative embodiment of the invention, multiple pairs of electrodes are arranged within the reaction chamber.

Production of amorphous silicon film

A ceramic having non-linear voltage characteristics, comprising the product obtained on mixing (a) zinc oxide, as a principal component, and (b) (1) cobalt and (2) one of neodymium, samarium or dysprosium, either in an elemental form or as a compound thereof, each in an amount of 0.1 to 10 atomic % for the cobalt, neodymium, samarium and dysprosium, calculated as cobalt, neodymium, samarium and dysprosium as subcomponents, and calcining the mixture at a temperature of from about 1150.degree. to about 1400.degree. C.

Ceramics having non-linear voltage characteristics and method of

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Kanagawa, Japan

Masaharu Namba