Fujitsu Corporation

Fujitsu Semiconductor Limited

Masaharu Minamizawa

Masataka Mizukoshi

Yoshiyuki Yoneda

Toshio Hamano

Masashi Takenaka

Atsushi Kikuchi

Makoto Iijima

Tetsushi Wakabayashi

Nobutaka Shimizu

Taturou Yamashita

Eiji Watanabe

Kazuyuki Imamura

Tatsuharu Matsuda

Mitsutaka Sato

Toshiyuki Motooka

Tadahiro Okamoto

Masaru Nukiwa

Nobukatsu Saito

Yasunori Fujimoto

Kazuto Tsuji

Toshiyuki Honda

Muneharu Morioka

Sumikazu Hosoyamada

Mitsuo Abe

Katsuro Hiraiwa

Takao Akai

Osamu Yamaguchi

Takumi Ihara

Yoshitsugu Kato

Yukihiro Kuriki

Masaki Uchida

A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Semiconductor device and manufacturing method thereof

A semiconductor element has a circuit formation surface on which electrode terminals are arranged in a peripheral part thereof. The semiconductor element is encapsulated by a mold resin on a substrate which has openings at positions corresponding to the electrodes of the semiconductor element. The semiconductor element is mounted to the substrate in a state where the circuit formation surface faces the substrate and the electrode terminals are positioned at the openings and a back surface opposite to the circuit formation surface of the semiconductor element is exposed from the mold resin. A heat-emitting member formed of a metal plate is provided on a surface of the substrate opposite to a surface on which the semiconductor element is mounted. The surface of the heat-emitting member being exposed from the mold resin.

Semiconductor device having a heat spreader exposed from a seal resin

A manufacturing method of a semiconductor device incorporating a passive element includes the steps as follows: a redistribution board forming step forms a redistribution board incorporating the passive element on a base board; a semiconductor element mounting step mounts at least one semiconductor element formed on an opposite side surface of the redistribution board with regard to the base board; a base board separating step separates the base board from the redistribution board and exposes the other surface of the redistribution board; a redistribution board mounting step mounts the redistribution board on a package board via electrode pads exposed from the other surface of the redistribution board.

Manufacturing method of a semiconductor device incorporating a passive element and a redistribution board

A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.

Method of forming a device substrate and semiconductor package including a pyramid contact

Semiconductor device and package including forming pyramid mount protruding through silicon substrate

A BGA semiconductor device includes a package substrate carrying thereon a semiconductor chip in a face-down state and a cap member covering the semiconductor chip on the package substrate, wherein the cap member has a optimized Young modulus smaller than about 20 GPa and a thermal conductivity exceeding about 100 W/(m&middot;K).

Flip-chip semiconductor device having an improved reliability

A semiconductor device includes a board and a semiconductor chip which is connected to an upper surface of the board via face-down bonding. The semiconductor device further includes a frame-shape member which is connected to the upper surface of the board with first adhesive, and has an opening to accommodate the semiconductor chip therein, and a plate-shape member which is situated to cover the semiconductor chip and the frame-shape member, and is connected to the semiconductor chip and the frame-shape member with second adhesive, wherein the frame-shape member has such a sufficient sturdiness as to prevent thermal-expansion-induced deformations of the board and the plate-shape member.

Semiconductor device and method of forming the same

A semiconductor device includes a board base having through-holes filled with a filling core, an additive layer provided on an upper surface of the board base as well as an upper surface of the filling core wherein the additive layer includes a wiring pattern having one or more paths, a semiconductor chip fixed on an upper surface of the additive layer, and nodes provided on a lower surface of the board base, wherein the one or more paths are laid out without a restriction posed by the through-holes, and are used for electrically connecting the semiconductor chip and the nodes.

Method of forming an assembly board with insulator filled through holes

Semiconductor device and assembly board having through-holes filled with

A method of forming a semiconductor device having a semiconductor chip having electrodes on which electrode pins are formed includes the steps of forming a complex having the electrode pins fixed in a fixing member, an arrangement of the electrode pins corresponding to that of the electrodes, connecting the electrode pins with the electrodes by mounting the complex on the semiconductor chip, and removing the fixing member from the complex mounted on the semiconductor chip.

Semiconductor device with reliable electrodes of projecting shape and

A semiconductor device includes a board base having through-holes filled with a filling core, and an additive layer provided on an upper surface of the board base as well as an upper surface of the filling core wherein the additive layer includes a wiring pattern having one or more paths. The semiconductor device further includes a semiconductor chip fixed on an upper surface of the additive layer, and nodes provided on a lower surface of the board base, wherein the one or more paths are laid out without a passage restriction posed by the through-holes, and are used for electrically connecting the semiconductor chip and the nodes.

A bump electrode includes a core portion provided on an intermediate electrode layer formed on an electrode pad formed on a surface of an element. The core portion contains a material having a Young's modulus less than that of soldering. An electrically conductive film covers the core portion.

Bump electrode, semiconductor integrated circuit device using the same,

Growing community of inventors

Kawasaki, Japan

Masaharu Minamizawa