Citizen Watch Company, Ltd.

Citizen Holdings Company, Ltd.

Sumitomo Chemical Company, Limited

National Institute of Advanced Industrial Science and Technology

The University of Tokyo

Bridgestone Corporation

Masafumi Yokoyama

Sadao Masubuchi

Akira Shiota

Masaaki Matsunaga

Kenji Matsumoto

Nobuyuki Hashimoto

Ayano Tanabe

Makoto Kurihara

Shinichi Nonaka

Shinichi Takagi

Masahiko Hata

Hisashi Yamada

Mitsuru Takenaka

Tetsuji Yasuda

Chikara Aizawa

Noboru Fukuhara

Makoto Yasunaga

Maki Wakita

Shigeru Futakami

Yuji Urabe

Sigeru Futakami

Hideki Takagi

Keisuke Sakai

Taro Itatani

Hideyuki Kawashima

Akinobu Iwako

Noriyuki Miyata

Hiroyuki Ishii

Yuka Saito

Takeshi Aoki

SangHyeon Kim

Kazunari Takahashi

A run-flat radial tire having a tire cross-section height of 115 mm or greater including: a carcass spanning between a pair of bead portions; a vehicle mounting direction outer side side-reinforcing rubber layer that is provided to a tire side portion at a vehicle mounting direction outer side and that extends in a tire radial direction along an inner face of the carcass; and a vehicle mounting direction inner side side-reinforcing rubber layer that is provided to a tire side portion at a vehicle mounting direction inner side and that extends in the tire radial direction along an inner face of the carcass, a tire radial direction outer side end portion of the vehicle mounting direction inner side side-reinforcing rubber layer being closer to a tire equatorial plane than a tire radial direction outer side end portion of the vehicle mounting direction outer side side-reinforcing rubber layer.

Run-flat radial tire

A light modulating deviceincludes: a selective diffraction device (') which generates diffracted light beams of a plurality of orders by diffracting illumination light into one of a plurality of directions, the illumination light being linearly polarized light having a polarization plane oriented in a first polarization direction, and which causes a phase difference between the diffracted light beams of the plurality of orders; and a polarization plane rotating devicewhich rotates the polarization plane of the diffracted light beam of each order so as to be oriented in a direction perpendicular to a direction radiating from an optical axis.

Light modulating device

An aberration correction device () corrects wave front aberration arising in an optical system that includes an object lens () disposed in an optical path for light beams output by a coherent light source (). The aberration correction device () has a symmetrical aberration correction element () that corrects symmetrical aberrations, which are the wave front aberrations that are symmetrical with respect to the optical axis among the wave front aberrations generated in the optical path, and an asymmetrical aberration correction element () that corrects asymmetrical aberrations, which are wave front aberrations that are asymmetrical with respect to the optical axis, generated in light beams incident obliquely on the object lens ().

Aberration correction device and laser microscope

A phase modulation device corrects wave front aberrations generated by an optical system including an objective lens disposed on an optical path of a light flux. The phase modulation device includes a phase modulation element which includes a plurality of electrodes, and modulates the phase of the light flux in accordance with a voltage applied to each electrode, and a control circuit which controls the voltage to be applied to each electrode. The control circuit controls the voltage to be applied to each electrode in such a manner that the light flux is imparted with a phase modulation amount in accordance with a phase modulation profile having a polarity opposite to the polarity of a phase distribution to be determined according to a relational equation representing a relationship between a numerical aperture of the objective lens and a ratio between third-order spherical aberration and fifth-order spherical aberration.

Phase modulation device and laser microscope

A polarization conversion element includes a phase reversal element and a polarization plane rotation element including a liquid crystal layer. The liquid crystal layer has a plurality of regions disposed along circumferential direction with the intersection point of the polarization plane rotation element and the optical axis as the center with alignment directions different from each other. When electric voltage in accordance with the wavelength of linear polarization incident on the polarization plane rotation element is applied, each region rotates the polarization plane of the polarization component transmitted by each region, and thereby converts linear polarization to radial polarization. The phase reversal element reverses, among the first and the second annular portions alternately disposed along the radial direction with the optical axis as the center, the phase of light incident on the first annular portion relative to the phase of light incident on the second annular portion.

Polarization conversion element

A light modulator element includes a liquid crystal element which has a liquid crystal layer containing liquid crystal molecules aligned along a first direction, and two transparent electrodes disposed in opposition to each other with the liquid crystal layer sandwiched therebetween, and which controls the phase of linear polarization light and passing through said liquid crystal layer by applying an electric voltage between said two transparent electrodes; a polarizer plate which is disposed between a light source and said liquid crystal element and which has the transmission axis along the first direction or along a direction orthogonal to said first direction; and a rotation mechanism which supports the liquid crystal element and the polarizer plate and which rotates the liquid crystal element and the polarizer plate integrally in one unit with the optical axis of the liquid crystal element as the rotation axis.

Light modulator element and microscope apparatus including light modulation element

A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate

Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Eof the first crystal layer is larger than the electron affinity Eof the second crystal layer.

Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor

Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of InGaAsP(0&#x3c;x1&#x2266;1, 0&#x2266;y1&#x2266;1), the second semiconductor crystal layer is made of InGaAsP(0&#x2266;x2&#x2266;1, 0&#x2266;y2&#x2266;1, y2&#x2260;y1), and the electron affinity Eof the first semiconductor crystal layer is lower than the electron affinity Eof the second semiconductor crystal layer.

Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer

The present invention is directed to the provision of a liquid crystal Fresnel lens that achieves high focusing performance. The liquid crystal Fresnel lens according to the present invention includes a concentrically segmented ring-shaped electrode group, a common electrode disposed opposite the ring-shaped electrode group, a liquid crystal layer provided between the ring-shaped electrode group and the common electrode, a first lens segment region which includes a first plurality of ring-shaped electrodes from the ring-shaped electrode group, and which forms a first retardation distribution by utilizing the first plurality of ring-shaped electrodes, and a second lens segment region which includes a second plurality of ring-shaped electrodes from the ring-shaped electrode group, the second plurality of ring-shaped electrodes being located outwardly of the first plurality of ring-shaped electrodes, and which forms a second retardation distribution by utilizing the second plurality of ring-shaped electrodes, wherein a Fresnel lens-like retardation distribution is formed across the first and second lens segment regions, and the number of the second plurality of ring-shaped electrodes is made smaller than the number of the first plurality of ring-shaped electrodes.

Liquid crystal fresnel lens

The present invention is directed to the provision of an LED light source that can easily adjust its chromaticity and a chromaticity adjustment method for such an LED light source. More specifically, the invention provides a chromaticity adjustment method for an LED light source having an LED device, a phosphor which absorbs a portion of light emitted from the LED device and emits light by wavelength conversion, and a resin material containing the phosphor and disposed so as to enclose the LED device, wherein an ink coating layer is disposed on a surface of the resin material in order to adjust chromaticity; the invention also provides an LED light source adjusted in such a manner.

LED light source and method for adjusting chromaticity of LED light source

The invention provides an exposure apparatus that outputs a stable photographic quality image unaffected by variations in ambient temperature, by suppressing the effects of the temperature variations and achieving accurate grayscale reproduction. In the exposure apparatus, input grayscale data Pis converted into corrected grayscale data by using a conversion table for correcting for the nonlinearity of exposure density, and grayscale exposure is performed on a photosensitive material by controlling exposure conditions in an exposure head based on the corrected grayscale data; here, the conversion table actually comprises a plurality of conversion tables one for each designated temperature region, and a temperature detector is provided for detecting the ambient temperature, with provisions made to select an appropriate one of the conversion tables under the control of select data in accordance with the temperature data supplied from the temperature detector. The exposure apparatus can thus achieve accurate grayscale reproduction and output a stable photographic quality image even when the ambient temperature varies.

Exposure device

The invention is directed to the provision of an exposure apparatus that can determine a correction value for each individual light-emitting part by employing a method that detects the amount of light corresponding to one particular light-emitting part from composite light containing light rays from adjacent light-emitting parts, and also to the provision of a method for producing such an exposure apparatus. The production method according to the invention comprises the steps of lighting a plurality of light-emitting parts at the same time, detecting an output light-amount distribution across all of the plurality of light-emitting parts by making measurements using a line-like light-receiving device, detecting a peak position corresponding to each light-emitting part by using the output light-amount distribution; detecting the amount of light of each light-emitting part based on the peak position, and determining, based on the amount of light of each light-emitting part, the correction value for correcting nonuniformity in the amount of light of the light-emitting part.

Method for determining a correction value for light-emitting parts in exposure apparatus

A color liquid crystal exposure apparatus includes a color light source for emitting a plurality of colored light beams, a liquid crystal shutter having a plurality of liquid crystal pixels arrayed in a direction orthogonal to the direction of the relative movement, and a driving circuit for switching the color light source from one color to another, and for driving the plurality of liquid crystal pixels. The plurality of liquid crystal pixels are divided into a plurality of pixel groups. The liquid crystal pixels in each pixel group are arrayed, one displaced from another by a prescribed distance, in the direction orthogonal to the direction of the relative movement. The driving circuit drives the plurality of liquid crystal pixels in time-division fashion so that the liquid crystal pixels having the same displaced position in the plurality of pixel groups are driven at one time.

Liquid crystal exposure device

A light source for an optical apparatus comprises a light emitting device, a light receiving device () for detecting the amount of light of the light emitting device, and light emission control means () for controlling the amount of light of the light emitting device in accordance with the amount of light detected by the light receiving device, wherein the light receiving device is disposed on one side of the light emitting device to form an optical pair, and a plurality of such optical pairs are arranged on a substrate. The plurality of optical pairs, each consisting of the light receiving device and the light emitting device, are arranged in a substantially straight line on a first substrate (), and the light emission control means are arranged in a substantially straight line on a second substrate ().

Growing community of inventors

Tokyo, Japan

Masafumi Yokoyama