Fujitsu Corporation

501 Fujitsu Limited

Masafumi Nakaishi

Masao Yamada

Keiji Watanabe

Ei Yano

Takashi Maruyama

Yuji Furumura

Kenji Nakagawa

Eiichi Hoshino

Fumitake Mieno

Takashi Eshita

Miwa Igarashi

Keiko Yano

Kotaro Shirabe

An electroconductive pattern is formed by coating a substrate with a solution comprising 100 parts by weight of a soluble electroconductive polymer containing an organic radical capable of cross-linking with a cross-linking agent, 5 to 1,000 parts by weight of a cross-linking agent, and 100 to 100,000 parts by weight of a solvent; effecting cross-linking of the resultant coated film to obtain a cured electroconductive film having a sheet resistance of 10.sup.10 .OMEGA./.quadrature. or less; forming a pattern as an upper layer on the cured electroconductive layer; and transferring the pattern of the upper layer to the cured electroconductive layer.

Processes for forming resist pattern and for producing semiconductor

A method of fabricating an X-ray exposure mask including the steps of forming a .beta.-SiC membrane by chemcial vapor deposition and simultaneously doping the membrane with at least one of phosphorous, boron, nitrogen and oxygen.

Method of fabricating an X-ray exposure mask

A membrane of the present invention used for a mask for X-ray exposure is made of an amorphous of boron nitride carbide hydrogenated, containing 1 to 10 atomic percent of carbon. This membrane is made in a plasma CVD, whose source gases are ammonia, diborane and methane diluted in argon gas. The flow rate ratio of the ammonia to the diborane is 0.6 to 1.55, the deposition temperature is 350.degree. to 500.degree. C., the gas pressure is 60 to 250 Pa, the applied RF power is 0.1 to 0.17 W/cm.sup.2. Thus formed membrane is adequately transparent to a visible light and the X-ray used for mask alignment, while keeping the stiffness enough and the residual stress properly tensile.

Method for production of X-ray-transparent membrane

Growing community of inventors

Inagi, Japan

Masafumi Nakaishi