Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electric Co., Ltd.

Masafumi Kubota

Noboru Nomura

Tokuhiko Tamaki

Kenji Harafuji

Masaaki Niwa

Ichiro Nakayama

Koji Eriguchi

Shigenori Hayashi

Mitsuhiro Ohkuni

Bunji Mizuno

Yuichiro Sasaki

Michinari Yamanaka

Atsuhiro Yamano

Masayuki Endo

Hiroshi Iwai

Yasutoshi Okuno

Tetsuya Ueda

Kousaku Yano

Hiroshi Imai

Michikazu Matsumoto

Tomoyasu Murakami

Masaru Moriwaki

Eiji Tamaoka

Naoto Matsuo

Kuniyuki Kakushima

Masuo Tanno

Riichiro Mitsuhashi

Kazuo Tsutsui

Mitsuhiro Okuni

Staoshi Ueda

Seiji Ueda

Hideo Nakagwa

Robert W Dutton

After a fin-semiconductor region () is formed on a substrate (), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (). This forms impurity-doped region () in at least side portions of the fin-semiconductor region ().

Method for fabricating semiconductor device and plasma doping apparatus

Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

Plasma doping method

A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.

Semiconductor device and method for fabricating the same

A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.

An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250&#xb0; C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Method for fabricating semiconductor device

A zirconium silicate layer is formed on a silicon substrate , a zirconium oxide layer is also formed on the zirconium silicate layer , and the zirconium oxide layer is then removed, thereby forming a gate insulating film made of the zirconium silicate layer

Semiconductor device and method for manufacture thereof

On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same

A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.

Wet-etching method and method for manufacturing semiconductor device

In etching a target film to be etched antecedently, an etching rate is measured at each of the peripheral and central portions of the target film. If the etching rate is higher at the peripheral portion of the target film to be etched antecedently than at the central portion thereof, a focus ring positioned around a wafer is moved upward in etching a target film to be etched subsequently, so that the quantity of radicals arriving at the peripheral portion of the target film to be etched subsequently is decreased. If the etching rate is lower at the peripheral portion of the target film to be etched antecedently than at the central portion thereof, the focus ring is moved downward in etching the target film to be etched subsequently, so that the quantity of radicals arriving at the peripheral portion of the target film to be etched subsequently is increased.

Etching method and etching apparatus

On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon. each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

Method of making aggregate of semiconductor micro-needles

Aggregate of semiconductor micro-needles and method of manufacturing the

Method of manufacturing aggregate of semiconductor micro-needles

A reactive gas supplied to a chamber 1 is put into plasma by supplying radio frequency power to the chamber 1 intermittently or while repeating high and low levels alternately and a specimen A in the chamber 1 is treated by the plasma. A positive pulse-like bias voltage synchronized with a period in which the radio frequency power is not supplied or a period in which low-level power is supplied is applied to the specimen A for preventing charging.

Plasma treatment method and plasma treatment system

A reactive gas is introduced into a vacuum chamber by a gas controller so that a plasma is generated in a plasma generation region. Subsequently, high-frequency power from a high-frequency power source is applied to a sample stage in the vacuum chamber so that ions in the plasma are made incident upon the sample stage, thereby performing dry etching with respect to a sample on the sample stage. In main etching, a value of (pressure of reactive gas)/(frequency of high-frequency power) is reduced so as to reduce a scattering probability, which is the probability of ions being scattered in collision with neutral particles in a sheath region, thereby increasing the energy of ion fluxes and making the incidence directions of the ion fluxes perpendicular to a surface of the sample stage. In overetching, the value of (pressure of reactive gas)/(frequency of high-frequency power) is increased so as to increase the above scattering probability, thereby reducing the energy of the ion fluxes and tilting the incidence directions of the ion fluxes from a perpendicular to the surface of the sample stage.

Plasma generating and processing method and apparatus thereof

Growing community of inventors

Osaka, Japan

Masafumi Kubota