Mitsubishi Denki Kabushiki Kaisha

Masafumi Katsumata

Hajime Watanabe

Yasuhiro Kimura

Hidekazu Yamamoto

Shigehisa Yamamoto

Yasukazu Mukogawa

Keiji Yamauchi

A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

Growing community of inventors

Hyogo, Japan

Masafumi Katsumata