Fuji Photo Film Company, Limited

Fujifilm Corporation

Fuji Photo Film, Inc.

Fuji Photo Optical Co., Ltd.

Fuji Film Co., Ltd.

Junichi Nishizawa

Masafumi Inuiya

Takeshi Misawa

Kazuya Oda

Yasuko Sonoda

Michitoshi Takayama

Yoshiaki Nakayama

Takahiro Ohta

Masaru Osada

Mikio Ihama

Koji Ichikawa

Takashige Tamamushi

Yuichi Ohashi

Noboru Arai

Koji Shimanuki

Jun Inada

Yukio Hagino

Kazuyuki Masugane

Kenkichi Hayashi

Mikio Watanabe

Masamichi Sato

Tomoki Inoue

Masahiro Konishi

Hiroyuki Ueda

Osamu Saito

Satoru Okamoto

Masatoshi Tabei

Makoto Murakoshi

Makoto Tsugita

Kazuyuki Masukane

Ikuo Fujimura

Yasumasa Sunaga

Kazuyoshi Kobayashi

Takashi Murakami

Kenichiro Ayaki

An imaging device comprising: in-substrate photoelectric converting devices arranged on the same plane in a semiconductor substrate; on-substrate photoelectric converting devices, formed on the same plane above the semiconductor substrate, each of which corresponds to each of at least a part of the in-substrate photoelectric converting devices and comprises a first electrode formed above the semiconductor substrate, a photoelectric converting layer formed on the first electrode and a second electrode formed on the photoelectric converting layer; a color filter layer that is formed above the semiconductor substrate and transmits a light in a different wave range from a wave range of a light to be absorbed by the photoelectric converting layer; and a signal reading section that reads a signal corresponding to an electric charge generated in the on-substrate photoelectric converting device and a signal corresponding to an electric charge generated in the in-substrate photoelectric converting device respectively.

Imaging device and endoscopic apparatus

A solid-state imaging device is provided and includes: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a plurality of semiconductor substrates between the substrate and the plurality of photoelectric conversion elements, each of the plurality of semiconductor substrates corresponding to each of the plurality of photoelectric conversion element groups; and a signal output section in the plurality of semiconductor substrates. The signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to a semiconductor substrate.

Solid-state imaging device, imaging apparatus, and method for manufacturing solid-state imaging device

A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, and the solid-state imaging device includes partitions for preventing light that is incident on the color filter of each pixel portion from entering adjacent pixel portions.

Solid-state imaging device and imaging apparatus having light-preventing partitions

A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, the solid-state imaging device includes partitions provided between the color filters of the adjoining pixel portions so as to cover side surfaces of the color filters, each of the photoelectric conversion portions includes a lower electrode provided over the substrate, an upper electrode provided over the lower electrode, and a photoelectric conversion layer provided between the lower electrode and the upper electrode, each of the pixel portions further includes a protective layer provided between the color filter and the upper electrode, and the protective layer has a thickness of greater than 0 &#x3bc;m and smaller than or equal to 1.0 &#x3bc;m.

Solid-state imaging device and imaging apparatus having pixels portions over a substrate

An image processing apparatus includes a color image data generation sectionthat generates color image data from an image pickup signal of a red component, an image pickup signal of a green component, and an image pickup signal of a blue component which are output from an image pickup device; an infrared image data generation sectionthat generates infrared image data from an image pickup signal of an infrared component output from the image pickup device; and a high-contrast infrared image data generation sectionthat generates high-contrast infrared image data using the color image data and the infrared image data. Contrast of the high-contrast infrared image data is more enhanced than that of the infrared image data.

Image processing apparatus, endoscope, and computer readable medium

An image print system for printing a picture from an image file having additional information, which enables high-quality image printing to be achieved using various types of image data and their additional information. Image data obtained by taking subjects are sent, together with their additional information, to an image reproduction system in a photographic laboratory. The image reproduction system carries out processing of the image data in accordance with the additional information, and produces its resultant images in the form of image prints. The additional information includes post-processing information for temporally or spatially correlating a series of images to combine them or to select some of them.

Image print system for printing a picture from an additional information affixed image file

A solid-state image pickup element has: a photoelectric converting film which is stacked above a semiconductor substrate; plural photoelectric converting elements which are arranged in the row direction and the column direction on the semiconductor substrate, and signal charge accumulating portions in which signal charges generated in the photoelectric converting film are accumulated; vertical transfer paths which are formed in the semiconductor substrate, and which transfer signal charges accumulated in the photoelectric converting elements and the signal charge accumulating portions, in the column direction; a horizontal transfer path which transfers the signal charges transferred from the vertical transfer paths, in the row direction; and an output section which outputs color signals corresponding to the signal charges transferred from the horizontal transfer path. The vertical transfer paths are formed so that two of them are disposed between the photoelectric converting elements adjacent to each other in the row direction, and between the signal charge accumulating portions, and they are formed so as to meander in the column direction between the columns.

Hybrid solid-state image pickup element and image pickup apparatus using the same

A solid-state image pickup apparatus includes a color filter including complementary color filter segments. When a shutter release bottom is pressed to its half-stroke or full-stroke position, light incident via the filter is picked up in a movie/photometry or a still picture mode, respectively. While signal charges are read out of an image sensor in accordance with the mode, the signal charges are digitized to become pixel data. In the movie/the photometry mode, despite that a plurality of pixel data are mixed together, a set of primary color pixel data are generated as if pixel signals were thinned out by mixture. In the still picture mode, all the pixels are sequentially read out and interpolated to generate primary color pixel data greater in number than photosensitive cells. The primary color data are raised in frequency to enhance the resolution of a picture.

Solid-state honeycomb type image pickup apparatus using a complementary color filter and signal processing method therefor

An information reader includes an imaging device that images a subject illuminated with light in a first wavelength region; an information-reading unit that reads information expressed by a site absorbing light in a second wavelength region based on imaging signals from the imaging device; and an information output unit, wherein the imaging device is a stack-typed imaging device that includes a plurality of pixel sections containing stacked two photoelectric conversion devices, with each of the two photoelectric conversion devices receiving light from the same position of the subject and converting it into the imaging signal, the two photoelectric conversion devices are a first photoelectric conversion device and a second photoelectric conversion device, and the information output unit generates the information based on a first imaging signal and a second imaging signal and outputs the information.

Information reader

After electrode padsformed on a silicon substrateand an electrodeto be connected thereto are exposed, a photoelectric conversion layeris formed via a first maskwhich covers exposed surfaces of the electrode padsand the electrode. Then, a second electrodeis formed on a third electrode via a second maskin which an opening is formed. This establishes a connection between the second electrodeand the electrode pads

Method of manufacturing solid-state imaging device and solid-state imaging device

In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.

Photoelectric converting film stack type solid-state image pickup device and method of producing the same

In a solid-state image pick-up device comprising photoelectric converting devicesandformed at a predetermined array interval in row and column directions on a semiconductor substrate, vertical transfer paths, . . . provided in the column direction of the photoelectric converting device and serving to read and transfer a signal charge obtained by the photoelectric converting device, and a shielding film for covering an upper part of the vertical transfer path, a poreis provided in a place corresponding to an imaginary pixel point position in the shielding film. Consequently, an actual signal (an imaginary pixel point charge) corresponding to the amount of a received light on the imaginary pixel point through the poreis stored in the vertical transfer path. Therefore, the imaginary pixel point charge is read from the solid-state image pick-up device before the signal charge is read from the photoelectric converting device, and image data based on the signal charge are corrected by the actual imaginary pixel point charge. Thus, it is possible to generate an image having a high resolution.

Solid-state image pick-up device and digital still camera

A solid-state image sensing device comprising: a silicon substrate; a photoelectric conversion layer provided for absorbing a green light component to generate optical charge; and photodiodes provided in a shallow portion and in a deep portion respectively in a depth direction of the silicon substrate, wherein the solid-state image sensing device further comprises a trimming layer provided between the photoelectric conversion layer and the silicon substrate for adjusting intensity of each of respective color light components of the light which is transmitted through the photoelectric conversion layer so as to be made incident on the photodiodes.

Photoelectric conversion layer stack type color solid-state image sensing device

A solid-state imaging apparatus includes an image pick-up section in which photosensitive devices are arranged in, e.g., a honeycomb G square lattice, RB full-checker pattern due to shifted pixels. Regions void of the photosensitive devices are assumed to be virtual photosensitive devices. A signal processing section generates data for the virtual photosensitive devices by using the data of surrounding photosensitive devices while attaching importance to accurate color reproduction and horizontal and/or vertical resolution. As a result, the number of pixel data are increased in a square lattice arrangement. Therefore, high quality image signals are readily achievable with a smaller number of photosensitive devices than conventional with a conventional apparatus. Interpolation can be executed with the high quality signals to the limit of resolution with an adequate circuit scale. The honeycomb arrangement guarantees the required size of the individual pixel and thereby the sensitivity of the entire apparatus while increasing yield on a production line. False colors particular to a single photosensitive portion can be reduced by, e.g., uniform interpolation. Particularly, when a digital camera is constructed by using an imaging apparatus including optics operable with a silver halide sensitive type of film, false colors can be reduced without resorting to an optical low pass filter.

Solid-state imaging apparatus and signal processing method for transforming image signals output from a honeycomb arrangement to high quality video signals

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Kanagawa, Japan

Masafumi Inuiya