Tokyo Ohka Kogyo Co., Ltd.

Masafumi Fujisaki

Junichi Tsuchiya

Kotaro Endo

Takashi Nagamine

Tsuyoshi Nakamura

Takahiro Kojima

Daichi Takaki

Hideto Nito

Takuya Ikeda

Tatsuya Fujii

Issei Suzuki

Kazuishi Tanno

KhanhTin Nguyen

Yuki Fukumura

Rikita Tsunoda

Miki Shinomiya

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a polymeric compound having a structural unit represented by general formula (a0-1) (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Varepresents a divalent hydrocarbon group; nrepresents an integer of 0 to 2; Rarepresents an acid dissociable group represented by general formula (a0-r1-1); Raand Rarepresents a hydrocarbon group; Raand Ramay be mutually bonded to form a ring; Yarepresents a quaternary carbon atom; Ra, Raand Raeach independently represents a hydrocarbon group, provided that at least one of Ra, Raand Rais a hydrocarbon group having a polar group). 

Resist composition, method of forming resist pattern, polymeric compound, and copolymer

A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid; and a compound represented by Formula (d1) in which Rand Reach independently represents &#x2014;COO, &#x2014;COOH, or a hydroxyl group, where at least one of Rand Rrepresents &#x2014;COO, R, R, and Reach independently represents a hydroxyl group or a halogen atom, Rto Reach independently represents an alkyl group, nbrepresents an integer of 0 to 4, nband nbeach independently represents an integer of 0 to 2, nbto nbeach independently represents an integer of 0 to 5, m represents 1 or 2, and q represents an integer of 0 to 3.) 

Resist composition, method of forming resist pattern, compound, and acid diffusion control agent

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1), a constitutional unit (a02) represented by Formula (a0-2), and a constitutional unit (a03) which is represented by Formula (a0-3) and has a structure different from the constitutional unit (a02). 

Resist composition and method of forming resist pattern

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1) and a constitutional unit (a1) which comprises an acid-decomposable group whose polarity is increased due to an action of an acid, and the constitutional unit (a1) comprises a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-1) and a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-2). 

A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Method of recovering resist pattern

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Kawasaki, Japan

Masafumi Fujisaki