Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Masafumi Asano

Tadahito Fujisawa

Soichi Inoue

Satoshi Tanaka

Hiroshi Matsushita

Kyoko Izuha

Junji Sugamoto

Takashi Sato

Shoji Mimotogi

Ryoichi Inanami

Masayuki Hatano

Kazuhiro Takahata

Hideki Kanai

Yoko Takekawa

Shinichiro Nakagawa

Shinichi Ito

Kazuya Fukuhara

Tsuyoshi Shibata

Takashi Sakamoto

Kenji Yoshida

Shigeki Nojima

Takahiro Ikeda

Kei Hayasaki

Masato Suzuki

Nobuhiro Komine

Tatsuhiko Higashiki

Kenji Konomi

Masahiro Kanno

Tetsuaki Matsunawa

Sachiko Kobayashi

Yohko Furutono

Tomoko Ojima

Takumichi Sutani

Yingkang Zhang

Daizo Mutoh

Ryouichi Inanami

According to an embodiment, a method for designing a mask set is provided. In the method for designing the mask set, an imprint-alignment mark is arranged in a region other than a chip region in an imprint shot formed in a template. The imprint-alignment mark is used for alignment during an imprint. Subsequently, the shape of the imprint shot is set based on an arrangement position of the imprint-alignment mark. Subsequently, another pattern is arranged in a region where the region is other than the chip region in the imprint shot and the imprint-alignment mark is not arranged. The other pattern is used in a process other than the imprint.

Method for designing mask set, recording medium, template, and method for manufacturing template

According to one embodiment, a mold includes a base, a first concave pattern, a second concave pattern, and a third concave pattern. The base includes a first surface and a pedestal projecting from the first surface. The pedestal includes a first region and a second region disposed outside the first region. The first concave pattern is formed in the first region. The second concave pattern is formed in the second region. The third concave pattern extends from the first region to the second region.

Mold and mold manufacturing method

According to the embodiments, a distribution of a recess portion shape is calculated based on a result obtained by measuring the recess portion shape of a first projection and recess pattern formed on a surface of a template. Next, a distribution of an application amount of a curing agent to a processing target layer is calculated based on the distribution of the recess portion shape, and the curing agent is applied to the processing target layer based on this distribution of the application amount of the curing agent. Next, a second projection and recess pattern is formed by transferring the first projection and recess pattern onto the curing agent by causing the curing agent to cure in a state where the first projection and recess pattern is in contact with the curing agent.

Pattern forming method, processing method, and processing apparatus

According to one embodiment, in a pattern inspection method, a guide pattern is formed on a substrate. A block copolymer is applied on the guide pattern. Thereafter, the substrate is heated according to a predetermined heating condition to promote directed self assembly corresponding to a shape of the guide pattern with respect to the block copolymer. Further, the substrate is observed by a fluorescence microscope during heating or after heating the substrate.

Pattern inspection method, pattern formation control method, and pattern inspection apparatus

According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.

Mask pattern creation method, recording medium, and semiconductor device manufacturing method

According to one embodiment, a pattern forming method is disclosed. The method can include forming an insulating layer on a major surface of a substrate. The method can include forming first and second openings on the insulating layer. The first opening has a first length in a first direction along the major surface, and the second opening has a second length longer than the first length in the first direction. The method can include forming a first pattern in the first opening. The method can include forming a second pattern in the second opening. The method can include forming a self-assembled material film contacting the insulating layer, the first pattern and the second pattern. The method can include forming a third pattern with guidance of the second pattern. In addition, the method can include forming a fourth pattern contacting the first pattern based on the third pattern.

Pattern forming method, mold and data processing method

According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed.

Simulation model creating method, computer program product, and method of manufacturing a semiconductor device

A simulation model creating method computes, for measurement results of a line width of a resist pattern formed with varied an exposure amount and focus value, a permissible fluctuation range of the pattern line width from a distribution of the exposure amount and a distribution of the focus value; computes difference values between the measurement results and corresponding approximation values on a fitting function which has the exposure amount and focus value as parameters; compares the difference values with the permissible fluctuation range; deletes any measurement values for which the difference value is larger than the permissible fluctuation range, and recomputes the fitting function accordingly; and deletes measurement values outside a permissible fluctuation range of a pattern line width of the mask, and creates a simulation model.

Simulation model creating method, mask data creating method and semiconductor device manufacturing method

A system of testing semiconductor devices includes a classification module configured to classify a plurality of lots into a plurality of groups; an apparatus assignment module configured to assign a plurality of testing apparatuses to each of the groups; and a test recipe creation module configured to create a test recipe to test defects in a second group other than a first group specified in the groups, the test recipe including a definition of testing positions in the second group defined by a rule different from the first group.

System of testing semiconductor devices, a method for testing semiconductor devices, and a method for manufacturing semiconductor devices

A management system includes a variable-period setting unit that sets a variable period in which quality-control values vary. Then, a retrieving unit retrieves events sandwiching the variable period. The events can be a maintenance of the semiconductor manufacturing device and/or a change of a correction value. An analysis-period setting unit sets an analysis period for analyzing a cause of variation of the quality-control values between the events retrieved by the retrieving unit.

Method and system for managing semiconductor manufacturing device

A method for controlling a semiconductor manufacturing apparatus for processing wafers divided for each lot, has acquiring quality control value data group containing quality control value data of wafers in a plurality of lots previously processed, and an equipment engineering system parameter group containing equipment engineering system parameters corresponding to the wafers; creating a prediction formula of quality control value data, acquiring a first equipment engineering system parameters; inputting the first equipment engineering system parameters to the prediction formula, and performing calculation to predict first quality control value data of the wafers in the first lot; determining processing of the wafers corresponding to the first quality control value data; acquiring measured first quality control value data of the wafers in the first lot; replacing the quality control value data corresponding to the wafers in the first processed lot; updating the prediction formula.

Method for controlling semiconductor manufacturing apparatus and control system of semiconductor manufacturing apparatus

A method for evaluating a sampling inspection. The method includes determining a first and a second sampling plan, and obtaining a first and a second measured value of a production lot based on the first and the second sampling plans, respectively. The method also includes calculating a first and a second acceptance variable based on the first and second measured values, respectively, and calculating a first and second acceptance probabilities based on the first and second acceptance variables, respectively. The method further includes calculating a first and a second operating characteristic of the first and second sampling plans based on the first and second acceptance probabilities, respectively, and evaluating the first and the second operating characteristics.

Method, apparatus, and computer readable medium for evaluating a sampling inspection

An evaluation method for lithography apparatus including a coating unit, an exposure unit, a heating unit and a development unit, the evaluation method including forming an evaluation resist pattern by using the lithography apparatus, the evaluation resist pattern including first and second evaluation patterns, the first and second evaluation patterns having different peripheral environments, measuring dimensions of the first and second evaluation patterns to obtain a dimensional difference between the first and second resist evaluation patterns, estimating an exposure dose of a resist when the resist is exposed by the exposure unit, the estimating the exposure dose being performed based on the dimensional difference between the first and second resist evaluation patterns, and estimating an effective heating temperature of the resist when the resist is heated by the heating unit, the estimating the effective heating temperature being performed based on the estimated exposure dose and the dimensional difference.

Method for evaluating lithography apparatus and method for controlling lithography apparatus

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Yokohama, Japan

Masafumi Asano