Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Masachika Iida

Hisashi Yoshino

Tsutomu Okutomi

Noburu Fukushima

Sadaaki Mori

Masakatsu Haga

Eiichi Takayanagi

Kazuyoshi Kuwabara

A protection circuit for a semiconductor device is disclosed. This circuit is connected in series with a power semiconductor device to be protected, and is comprised of a circuit breaker and current-limiting device. The current-limiting device limits the overcurrent, thereby providing a time allowance until the circuit breaker begins operate.

Protection circuit for a semiconductor device

Disclosed is an electrical contact of composite layer type which comprises an interrupting layer consisting of Cu-W alloy, Cu-WC alloy or Cu-W-WC alloy containing 20 to 60 wt % of Cu and being bonded to the top surface of a base plate, and a contacting layer consisting of Ag-WC alloy, Ag-W alloy or Ag-W-WC alloy containing 20 to 60 wt % of Ag and being bonded to the top surface of said interrupting layer.

Electrical contact

Growing community of inventors

Kuwana, Japan

Masachika Iida