Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Masaaki Yuri

Masahiro Ishida

Tetsuzo Ueda

Osamu Imafuji

Kenji Orita

Shinji Nakamura

Masahiro Ogawa

Daisuke Ueda

Takaaki Baba

Hisashi Nakayama

Tadao Hashimoto

Hideo Nagai

Toru Takayama

Masaya Mannoh

Seiichiro Tamai

Masaru Kazumura

Kunio Ito

Kunio Itoh

Akio Yoshikawa

Nobuyuki Uemura

Norio Ikedo

Kenichi Matsuda

Toshiya Yokogawa

Hideyuki Nakanishi

Shozo Oshio

Yoshiaki Hasegawa

Satoshi Tamura

Masahiro Kume

Hirokazu Shimizu

Ryou Kato

Katsuya Samonji

Toshiyuki Takizawa

Akio Ueta

Atsunori Mochida

Masao Kawaguchi

Yasuyuki Fukushima

Yasuyuki Kouchi

Katsumi Sugiura

Hisanori Ishiguro

Kenzi Orita

Masahiro Isida

Hideho Nagai

The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar AlInGaN layer having a thickness of t1 is interposed between the AlInGaN layer included in the p-type nitride semiconductor layer and the active layer (0&#x3c;x2&#x2266;1, 0&#x2266;y2&#x3c;1, 0&#x3c;z2&#x3c;1, x2+y2+z2=1). The AlInGaN layer has first and second interfaces located close to or in contact with the active layer and the AlInGaN layer, respectively. The AlInGaN layer has a hydrogen concentration distribution along its thickness direction in the inside thereof in such a manner that the hydrogen concentration is increased from the first interface to a thickness t2 (t2&#x3c;t1), reaches a peak at the thickness t2, and is decreased from the thickness t2 to the second interface. Magnesium contained in the AlInGaN layer is prevented from being diffused into the active layer to improve the luminous efficiency.

Nitride semiconductor light-emitting element

A semiconductor light-emitting device includes: a support; a semiconductor light-emitting element bonded to the support and comprising a first electrode, a second electrode, and a semiconductor layer including at least an active layer, at least one of the first and second electrodes overlying the semiconductor layer; and a wiring metal formed to extend from above a portion of an upper surface of the support not underlying the semiconductor light-emitting element to one said electrode overlying the semiconductor layer. The electrode is fed with power through the wiring metal.

Semiconductor light-emitting device, lighting module and lighting apparatus

A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2&#x3c;Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

Semiconductor laser device

An LED bare chip which is one type of a semiconductor light emitting device () includes a multilayer epitaxial structure () composed of a p-GaN layer (), an InGaN/GaN MQW light emitting layer () and an n-GaN layer (). A p-electrode () is formed on the p-GaN layer (), and an n-electrode () is formed on the n-GaN layer (). An Au plating layer () is formed on the p-electrode (). The Au plating layer () supports the multilayer epitaxial structure () and conducts heat generated in the light emitting layer (). The Au plating layer () is electrically divided into two portions by a polyimide member (). One of the two portions (A) is connected to the p-electrode (), to be constituted as an anode power supply terminal, and the other portion (K) is connected to the n-electrode () by a wiring (), to be constituted as a cathode power supply terminal.

Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device

A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.

Semiconductor device having a group III nitride semiconductor layer

It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate, an n-type GaN layer, an n-type AlGaN cladding layer, a n-type GaN guide layer, an InGaN multiple quantum well active layer, an undoped-GaN guide layer, a p-type AlGaN electron overflow suppression layer, a p-type GaN guide layer, a SiOblocking layer, an Ni/ITO cladding layer electrodeas a transparent electrode, a Ti/Au pad electrode, and a Ti/Al/Ni/Au electrode. The SiOblocking layeris formed above the InGaN multiple quantum well active layerso as to have an opening. The Ni/ITO cladding layer electrodeis formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

Semiconductor laser device including transparent electrode

A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.

Semiconductor device with oxidized regions and method for fabricating the same

A semiconductor light source includes a light-emitting devicehaving a plurality of semiconductor layers made of nitride semiconductors, and a drive circuitfor driving the light-emitting device. The drive circuitperforms forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting deviceemit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

Semiconductor light source and light-emitting device drive circuit

A semiconductor laser () includes a first cladding layer (), an active layer () and a second cladding layer (). A window region () including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face () and a rear end face () of a laser resonator. The window region () is formed by exposing the front end face () and the rear end face () to carbon fluoride (CF) plasma. The effective band gap of a portion of the active layer () disposed in the window region () is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

Semiconductor laser and method for fabricating the same

A substrate with a second semiconductor layer and a second mask film formed thereon is subjected to a heat treatment in an oxidizing atmosphere. Thus, second oxidized regions are formed through oxidization of the second semiconductor layer in regions of the second semiconductor layer that are not covered by the second mask film. At the same time, a second base layer is formed in each region that is interposed by the second oxidized regions. Then, the second mask film is removed, and a third semiconductor layer is selectively grown on the surface of the second base layer that is exposed between the second oxidized regions so as to cover the second oxidized regions, after which the first oxidized regions and the second oxidized regions covering the entire upper surface of the substrate are removed.

Method for manufacturing semiconductor thin film

The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate: an n-type GaN layer; an n-type AlGaN cladding layer, a first n-type GaN guiding layer; and a p-type AlGaN blocking layer(current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer, a second n-type GaN guiding layeris formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer: an InGaN multiple quantum well active layer; an undoped GaN guiding layer; a p-type AlGaN electron overflow suppression layer, a p-type AlGaN cladding layer, and a p-type GaN contact layer

Semiconductor laser device and manufacturing method thereof

A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and having a larger band gap energy than the well layer; and a thin film layer provided between the well layer and the barrier layer. The thin film layer is formed during lowering of the substrate temperature after formation of the barrier layer or during elevation of the substrate temperature after formation of the well layer.

Nitride semiconductor device and method for fabricating the same

A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method

A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.

Method for manufacturing semiconductor substrate

Growing community of inventors

Osaka, Japan

Masaaki Yuri