Hitachi Chemical Company, Ltd.

Masaaki Yasuda

Takashi Masuko

Shigeki Katogi

Takashi Kawamori

Toshiaki Tanaka

Aizou Kaneda

Akira Nagai

Hiroshi Nishizawa

Yoshii Morishita

Hidekazu Matsuura

Yoshihiro Nomura

Hiroyuki Kawakami

Keiichi Hatakeyama

Touichi Sakata

Naoya Suzuki

Yasuhiro Yano

Takashi Kousaka

Shoichi Sasaki

Naotaka Tanaka

Itsuo Watanabe

Fumio Inoue

Masao Suzuki

Akira Kageyama

Teiichi Inada

Kazuhiko Kurafuchi

Kazunori Yamamoto

Keiji Sumiya

Takayuki Matsuzaki

Yasushi Shimada

Tomohisa Ohta

Yoshiaki Tsubomatsu

Kazuyoshi Kojima

Hiroyuki Kuriya

Osamu Watanabe

Toshio Yamazaki

Michio Uruno

Tetsuya Enomoto

Kenzo Takemura

Kenya Kawano

Takeo Tomiyama

Masaya Nishiyama

Tatsuo Kawata

Tetsurou Iwakura

Tsutomu Kitakatsu

Masao Kawasumi

Naoyuki Shiozawa

Hiroyuki Sakai

Yuuko Tanaka

Takafumi Dohdoh

Koji Tasaki

Yuuji Hasegawa

Hiroto Ohata

A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.

Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part

To provide a method of manufacturing semiconductor devices, the method being capable of efficiently obtaining a singulated semiconductor chip upon which an adhesive is adhered and also capable of excellently bonding a semiconductor chip to a wiring substrate, and provide an adhesive film. A layered productin which a dicing tape, an adhesive layer, and a semiconductor waferare stacked in this order so that a circuit surfaceof the semiconductor wafermay face the dicing tapeside. A cutting position is recognized by recognizing a circuit pattern P in the circuit surfacefrom a rear surfaceof the semiconductor wafer. At least the semiconductor waferand the adhesive layerare cut in the thickness direction of the layered product. The dicing tapeis cured to peel off the dicing tapeand the adhesive layer. A projection electrodeof a semiconductor chipis aligned with a wiringof a wiring substrate. The wiring substrateand the semiconductor chipare bonded via an adhesive layerso that the wiringand the projection electrodemay be electrically connected to each other.

Production method of semiconductor device and bonding film

A semiconductor device is provided with connection reliability between a bump electrode and a substrate electrode. An elastic modulus of an adhesive material used to electrically connect a metal bump and an interconnect pattern, and sealing the circuit surface of an LSI chip, after thermosetting is Ea; an elastic modulus of an insulating material of a packaging substrate surface layer after thermosetting is Eb; an elastic modulus of a core material, if used, is Ec, and the following rational expression is satisfied at normal temperature or a thermal contact bonding temperature of the adhesive material: at least Ea&#x3c;Eb&#x3c;Ec, preferably &#x2153;Eb&#x3c;Ea&#x3c;Eb&#x3c;3Ea(&#x3c;Ec). With this arrangement, a stable connection state can be attained irrespective of the level of the contact bonding load or fluctuations of it upon mass production and, therefore, high yield can be attained at low cost.

Semiconductor device and multilayer substrate therefor

There are disclosed a resin composition comprising (A) a heat-resistant resin soluble in a solvent at room temperature, (B) a heat-resistant resin which is insoluble in a solvent at room temperature but becomes soluble by heating, and (C) a solvent; a heat-resistant resin paste further containing (D) particles or liquid state material D showing rubber elasticity; and a semiconductor device using the same and a method for producing the same.

Resin composition, heat-resistant resin paste and semiconductor device using these and method of preparing the same

There are disclosed an adhesive composition comprising: (a) an epoxy resin, (b) a curing agent and (c) a polymer compound with a weight average molecular weight of 100,000 or more, wherein a ratio of A/B exceeds 1 and is 10 or less, where A represents the total weight of (a) the epoxy resin and (b) the curing agent and B represents a weight of (c) the polymer compound; an adhesive composition, whose compositions are separated into a sea phase and an island phase, when viewed at a section in a cured state, and a ratio X/Y is in a range of 0.1 to 1.0, where X is an area of the sea phase and Y is an area of the island phase; a process for producing said adhesive composition; an adhesive film wherein said adhesive composition is formed into a film form; an adhesive film for bonding a semiconductor chip and a wiring board for mounting a semiconductor or for bonding semiconductor chips themselves, wherein the adhesive film can perform bonding by heat-pressing with a pressure of 0.01 to 0.5 MPa; a wiring board for mounting a semiconductor equipped with said adhesive film on a surface for mounting a semiconductor chip; and a semiconductor device using said adhesive film or said wiring board for mounting a semiconductor.

Adhesive composition, method for preparing the same, adhesive film using the same, substrate for carrying semiconductor and semiconductor device

Resin composition, heat-resistant resin paste and semiconductor device using them and method for manufacture thereof

A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e&lE;0.2&times;&sgr;b formula (1) Ui&gE;2.0&times;10 &times;&sgr;ei formula (2) Ud&gE;4.69&times;10 &times;ed formula (3) wherein &sgr;b (MPa)represents the flexural strength at break of the sealing material at 25&deg;, Ui (N&middot;m) and Ud (N&middot;m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where &sgr;e&equals;(1/log(kd ))&times;Ee &times;(&agr;m&minus;&agr;e )&times;&Dgr;T formula (4), &sgr;ei&equals;Ee &times;(&agr;e &minus;&agr;m)&times;&Dgr;T formula (5), &sgr;ed&equals;log(kd )&times;Ee &times;(&agr;e &minus;&agr;m)&times;&Dgr;T Formula (6), kd : a ratio of the flexural elastic modulus Ed (MPa) of the die bonding material at 25&deg; to 1 MPa of elastic modulus (Ed >1 MPa), kd : a ratio of the flexural elastic modulus Ed (MPa) of the die bonding material at the peak temperature during the soldering to 1 MPa of elastic modulus (Ed >1 MPa), Ee : a flexural modulus (MPa) of the sealing material at 25&deg;, Ee : a flexural modulus (MPa) of the sealing material at the peak temperature during soldering, &agr;e : an average thermal expansion coefficient (1/&deg; C.) of the sealing material from forming temperature for the semiconductor to room temperature (25&deg; C.), &agr;e : an average thermal expansion coefficient (1/&deg; C.) of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, &agr;m: a thermal expansion coefficient (1/&deg; C.) of the lead frame, &Dgr;T : the difference (&deg; C.) between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and &Dgr;T : the difference (&deg; C.) between the forming temperature for the semiconductor and the peak temperature during soldering.

Resin-sealed semiconductor device, and die bonding material and sealing material for use therein

In the present invention, provided are a semiconductor device having a semiconductor-element-mounting substrate on which a semiconductor element has been mounted via an adhesive having an exothermic-reaction curing start temperature of 130&deg; C. or below as measured with a differential scanning calorimeter at a heating rate of 10&deg; C./minute, and a process for its fabrication.

Semiconductor device and method for manufacturing the same

A paste composition which comprises as essential ingredients (A) a thermoplastic resin, (B) an epoxy resin, (C) a coupling agent, (D) a powdery inorganic filler, (E) a powder having rubber elasticity and (F) an organic solvent and which, when applied and dried, gives a coating film having a void content of 3% by volume or higher and a water vapor permeability as measured at 40&deg; C. and 90 %RH of 500 g/m &middot;24 h or less; a protective film which is formed by applying the paste composition to a surface of a semiconductor part and drying it and has a void content of 3% by volume or higher and a water vapor permeability as measured at 40&deg; C. and 90%RH of 500 g/m &middot;24 h or less; and a semiconductor device having the protective film.

Paste composition, and protective film and semiconductor device both obtained with the same

Method of production of semiconductor device

Growing community of inventors

Tsukuba, Japan

Masaaki Yasuda