Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Teitokusha Co., Ltd.

Oki Electric Industry Co., Ltd.

Masaaki Ueno

Tetsuya Kosugi

Masashi Sugishita

Hitoshi Murata

Akira Hayashida

Masakazu Shimada

Hideto Yamaguchi

Tokunobu Akao

Shinobu Sugiura

Motoya Takewaki

Kazuo Tanaka

Kenji Tanaka

Kimio Kitamura

Jyunichi Nishihara

Takeo Hanashima

Minoru Nakano

Akinori Tanaka

Tomoyuki Yamada

Toshimitsu Miyata

Kenji Shinozaki

Haruo Morikawa

Atushi Umekawa

Kiyohiko Maeda

Yukinori Aburatani

Akihiro Osaka

Seiyo Nakashima

Kazuyuki Tajima

Keishin Yamazaki

Fumio Kobayashi

Kenji Shirako

Junichi Yamamoto

Takenori Oka

Masaya Nishida

Yoshihiko Nakagawa

Tsukasa Iida

Susumu Nishiura

Kenichi Fujimoto

Hiroyuki Mitsui

Manabu Izumi

Katsuaki Nogami

Masao Aoyama

Shigemitsu Fujisawa

Sachio Henmi

Masanobu Sakurai

Yuuji Urano

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.

Substrate processing apparatus and non-transitory computer-readable recording medium

According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe provided to be accommodated in a recess formed at a portion of a substrate retainer on which the substrate is mounted.

Substrate temperature sensor, substrate retainer and substrate processing apparatus

The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program

According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.

Substrate processing apparatus, method of manufacturing semiconductor device and heater

There is provided a technique that includes: a heat generator installed for each of control zones and configured to raise an internal temperature of a reaction tube by heat generation; a circuit configured to equalize resistance values in the respective control zones, wherein the circuit is a parallel circuit and is configured such that an output variable element is installed in one or more of output circuits constituting the parallel circuit.

Heater, temperature control system, and processing apparatus

According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe passing through a notch provided at least in a bottom plate of a substrate retainer inserted into a process chamber in a state where the substrate is mounted on the substrate retainer.

A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support

There is provided a cooling unit, comprising: an intake pipe provided for each of a plurality of zones and configured to supply a gas for cooling a reaction tube; a control valve provided in the intake pipe and configured to adjust a flow rate of the gas; a buffer part configured to temporarily store the gas supplied from the intake pipe; and openings provided so as to blow the gas stored in the buffer part toward the reaction tube, wherein the flow rate of the gas introduced into the intake pipe is set according to vertical length ratios of the zones such that the flow rate and a flow velocity of the gas injected from the openings toward the reaction tube are adjusted by opening and closing the control valve.

Cooling unit, heat insulating structure, and substrate processing apparatus

Electric furnace for substrate processing apparatus

A substrate processing apparatus includes a reaction tube processing a substrate, a heating part disposed on an outside of the reaction tube that heats the interior of the reaction tube, an insulating part disposed on an outside of the heating part, a plurality of flow channels installed in the insulating part and allows an air or a cooling medium to flow, and a ceiling part configured to cover an upper surface of the insulating part. The ceiling part includes a first member having a supply hole formed to communicate with the flow channels and to supply the air or cooling medium into the flow channels, and a second member having a space formed between the second member and the first member and allowing the air or the cooling medium to flow therein and having a partition part to partition the space into at least two spaces.

Substrate processing apparatus including heating and cooling device, and ceiling part included in the same

A ceiling heat insulator installed above a side wall heat insulator of a heating apparatus for a substrate processing apparatus for processing a substrate is provided. The ceiling heat insulator includes a gas-flow path installed therein to allow a cooling gas to pass therethrough so that the ceiling heat insulator has a solid cross-sectional area in an outer edge side of the ceiling heat insulator that is smaller than that in a center side of the ceiling heat insulator.

Substrate processing apparatus, heating apparatus, ceiling heat insulator, and method of manufacturing semiconductor device

Protector tube for thermocouple

Growing community of inventors

Toyama, Japan

Masaaki Ueno