Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Vlsi Engineering Corp.

Other

Hitachi Ulsi Systems Co., Ltd.

Hitachi Microcomputer Engineering, Ltd.

Hitachi Vsli Engineering Corp.

Hitachi, Ltd., & Hitachi Microcomputer Engineering Ltd.

Hitachi, Ltd. & Engineering Corp.

Hitachi Vlsi

Hitachi Vsli Eng. Corp.

Masaaki Terasawa

Kenichi Kuroda

Kiyoshi Matsubara

Shiro Baba

Kazuyoshi Shiba

Masanao Sato

Takashi Ito

Naoki Yashiki

Hirofumi Mukai

Yoshiki Kawajiri

Takanori Yamazoe

Kazunori Furusawa

Shinji Nabetani

Yoshiaki Kamigaki

Nobuyuki Sato

Yasunori Ikeda

Kazuaki Ujiie

Hidefumi Mukohda

Shoji Shukuri

Yoshifumi Kawamoto

Shinichi Minami

Yoshikazu Nagai

A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

The present invention is directed to largely reduce peak current at the time of operation of a boosting circuit provided for an EEPROM. In the erase/write operation, first, a low-frequency clock signal as a selection clock signal is input by a low-frequency clock control signal to a charge pump. After lapse of a certain period (about &#x2153; of fall time), a high-frequency clock signal having a frequency higher than that of the low-frequency clock signal is output by a high-frequency clock control signal and is input as the selection clock signal to the charge pump to boost a voltage to a predetermined voltage level. In such a manner, while suppressing the peak of consumption current, the fall time of the boosted voltage can be shortened.

Data processing circuit for contactless IC card

A delay from the release of a low power consumption mode of nonvolatile memory to the restart of read operation is reduced. Nonvolatile memory which can electrically rewrite stored information has in well regions plural nonvolatile memory cell transistors having drain electrodes and source electrodes respectively coupled to bit lines and source lines and gate electrodes coupled to word lines and storing information based on a difference between threshold voltages to a word line select level in read operation, and the nonvolatile memory has a low power consumption mode. In the low power consumption mode, a second voltage lower than a circuit ground voltage and higher than a first negative voltage necessary for read operation is supplied to the well regions and word lines. When boost forming a rewriting negative voltage therein, a circuit node at a negative voltage is not the circuit ground voltage in the low power consumption mode.

Data processing device

Disk processing apparatus with voltage generating circuit having a boost ratio control

Nonvolatile memory with multi-frequency charge pump control

Method for manufacturing a printed board on which a semiconductor device having two modes is mounted

Microcomputer including a flash memory that is two-way programmable

A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.

Growing community of inventors

Akishima, Japan

Masaaki Terasawa