Sony Semiconductor Solutions Corporation

Sony Corporation

Seiko Epson Corporation

Masaaki Takizawa

Takeshi Yanagita

Yorito Sakano

Shinichi Arakawa

Yohei Chiba

Yuuji Nishimura

Yuugo Nakamura

Motonobu Torii

Atsushi Suzuki

Isao Hirota

Yasushi Tateshita

Junichiro Azami

Motohashi Yuichi

Takahiro Toyoshima

Takuya Toyofuku

Masaki Sakakibara

Masami Suzuki

Kentaro Akiyama

Yuji Takaoka

Tsuneo Kasai

Morikazu Konishi

Tomohiko Asatsuma

Yoshimichi Harada

Yoshihiro Nabe

Satoko Iida

Chiaki Sakai

Shogo Furuya

Naosuke Asari

A wide dynamic range with single exposure is achieved. A solid-state imaging device according to an embodiment includes a first substrate including a photoelectric conversion element, and a second substrate including a capacitor positioned on a side opposite to a surface of incidence of light to the photoelectric conversion element in the first substrate, and configured to accumulate a charge transferred from the photoelectric conversion element.

Solid-state imaging device and electronic device

A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

Imaging element, driving method, and electronic device

The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG.B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG.C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The present disclosure can be applied to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Solid-state imaging device and electronic apparatus

The present disclosure relates to a solid-state imaging device and an electronic device capable of effectively preventing blooming. Provided is a solid-state imaging device including: a pixel array portion in which a plurality of pixels is two-dimensionally arranged, in which the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, the in-pixel capacitance being provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, the counter electrode being provided in the semiconductor substrate. The present disclosure can be applied to, for example, a back-illuminated CMOS image sensor.

Solid-state imaging device with pixels having an in-pixel capacitance

The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section. The present technology is applicable to solid-state imaging devices, for example.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.

Solid-state imaging device and method of controlling solid-state imaging device, and electronic device

Provided are a solid-state imaging device and an electronic apparatus that include a charge storage unit. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to the hole.

An image reading apparatus includes a first sensor that reads a first area of an image, a second sensor that reads a second area, and a processing circuit that generates a merge image by performing a merge process on first image data acquired by reading by the first sensor and second image data acquired by reading by the second sensor. The processing circuit calculates a correction value having a tendency of approaching zero as being away from an overlap area between the first area and the second area based on a reading result acquired by reading the overlap area by the first sensor and a reading result acquired by reading by the second sensor, and generates the merge image by performing an offset process using the correction value.

Image reading apparatus, program, and image generation method for generating merge image of partially overlapping areas of image

A reading apparatus includes a first line sensor and a second line sensor, and a plurality of signal processing circuits including a first signal processing circuit, the plurality of signal processing circuits configured to receive signals from a corresponding line sensor. The first line sensor corresponds to the first signal processing circuit, and the first line sensor and the second line sensor are arranged in such a way as to be separate from each other in a transport direction and overlap with each other in an intersecting direction. A space is adjacent to the second line sensor in the intersecting direction, and the first signal processing circuit is arranged in the space. The first signal processing circuit is arranged to be adjacent to the first line sensor in the transport direction.

Reading apparatus and control method for reading apparatus

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Kanagawa, Japan

Masaaki Takizawa