Samsung Electronics Co., Ltd.

Masaaki Sofue

Kun Yoo Ko

Sang Yeob Song

Chan Mook Lim

Mi Jeong Yun

Myeong Ha Kim

A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

Semiconductor light-emitting device

A white light emitting device includes: a blue light emitting diode (LED) which emits blue light; and a resin packing unit which encapsulates the blue LED, wherein the resin packing unit includes a first wavelength conversion material which, in response to being excited by the blue light, emits green light, a second wavelength conversion material which, in response to being excited by the blue light, emits red light, and a complex compound which absorbs light of a region in which the green light and the red light are mixed, the light of the region being included in white light implemented through a mixture of the green light and the red light excited together with the blue light.

Growing community of inventors

Seongnam-si, South Korea

Masaaki Sofue