Matsushita Electric Works, Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Masaaki Saito

Hiroshi Kawada

Hitoshi Yoshida

Kazuhiro Nobutoki

Jun Ogihara

Shigeaki Tomonari

Masanao Kamakura

Shuichi Nagao

Yosuke Hagihara

Katsumi Kakimoto

Takafumi Okudo

Ryo Osabe

Yoichi Nishijima

Naoki Ushiyama

Sumio Akai

Yasufumi Shibata

An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Infrared sensor having improved sensitivity and reduced heat generation

A flexible area is joined at one end via a thermal insulation area to a semiconductor substrate which becomes a frame and at an opposite end to a moving element . The thermal insulation area is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area is made up of a thin portion S and a thin film M different in thermal expansion coefficient. When a diffused resistor formed on the surface of the thin portion S is heated, the flexible area is displaced because of the thermal expansion difference between the thin portion S and the thin film M, and the moving element is displayed with respect to the semiconductor substrate

Semiconductor device

Growing community of inventors

Osaka, Japan

Masaaki Saito