Sanyo Electric Co., Ltd.

Sanyo Electric., Ltd.

Masaaki Nemoto

Hiroshi Nonoue

Takashi Umemoto

Masao Nakao

Ryokan Yuasa

Shuji Fujiwara

Yasuo Nakahara

Ryohkan Yuasa

Atsuo Mizukami

Kikuko Kato

Masaru Yamano

Yorinobu Yoshisato

Isao Yoshida

Koji Endo

Hiroaki Furukawa

Shingo Terakado

Hideki Kuwahara

Shuichi Yoshikawa

Hiromi Mukaida

Kazuaki Shikiti

An anode includes a first region adjacent to a root of an anode lead, a second region at a corner of one end surface of the anode, a third region between the first region and the second region, and a fourth region in the interior of the anode into which the anode lead is embedded. The thicknesses of a dielectric layer in the first region and the second region are greater than the thicknesses of the dielectric layer in the third region and the fourth region.

Solid electrolytic capacitor and method for manufacturing the same

An object of the present invention is to provide a solid electrolytic capacitor having reduced leakage current and a manufacturing method thereof. The solid electrolytic capacitor of the present invention includes a capacitor element including: an anodecomposed of a sintered body of metal particles; an anode leadprovided so that one end thereof is embedded in the anode; a dielectric layerformed on the surface of the anode; an electrolyte layerformed on the dielectric layer; and a cathode layerformed on the electrolyte layerso that an exposed faceof the electrolyte layerexists around the anode lead, wherein an anode terminalelectrically connected to the other end of the anode leadand a cathode terminalelectrically connected to the cathode layerare attached to the capacitor element, and a first resin partis provided to cover a part of the anode leadextending from the exposed faceof the electrolyte layerof the capacitor element to the anode terminal, and a second resin partis provided to cover at least the above capacitor element and the first resin part

Solid electrolytic capacitor and manufacturing method thereof

A method for manufacturing a solid electrolytic capacitor that prevents leakage current from increasing. The method includes preparing a capacitor element including an anode body, which has an anode lead, and a cathode layer; preparing a lead terminal including an anode terminal, a cathode terminal, and a first insulative member which connects the anode terminal and cathode terminal; connecting the lead terminal and the capacitor element by bonding the anode terminal and the anode lead and bonding the cathode terminal and the cathode layer; and molding a package resin around the capacitor element.

A solid electrolytic capacitor including an anode body, a dielectric layer arranged on the anode body, a conductive polymer layer arranged on the dielectric layer, and a cathode layer including a carbon layer arranged on the conductive polymer layer and a silver layer arranged on the carbon layer. The conductive polymer layer includes ridges and valleys formed in a surface that faces toward the cathode layer. The silver layer includes a first silver layer, which is arranged on the carbon layer, covers the ridges and valleys, and mainly contains spherical silver particles, and a second silver layer, which is arranged on the first silver layer and mainly contains silver flakes.

Solid electrolytic capacitor

A solid electrolytic capacitor comprising an anode body, a dielectric layer placed on the surface of the anode body, a conductive polymer layer placed on the surface of the dielectric layer, and a housing accommodating at least the anode body, the dielectric layer and the conductive polymer layer, wherein a water-retaining layer having higher water absorption than that of the housing is placed between the conductive polymer layer and the housing.

Solid electrolytic capacitor and method of fabricating the same

An electric double layer capacitor comprises an electrode, a current collector, an electrolyte, a separator, a concave-shaped container for accommodating them, and a sealing plate for sealing an opening part of the container, wherein the sealing plate is fitted inside the container. By having a structure fitting the sealing plate inside an opening part of the concave-shaped container, the positioning between the sealing plate and the container becomes easy, and the displacement of the sealing plate in the horizontal direction can be reduced. Thus, the decline of the yield can be prevented.

Electric double layer capacitor with a sealing plate fitted inside a container

The present invention provides an electric double layer capacitor that has less chance for internal resistance increase. For this objective, in this electric double layer capacitor, an electric double layer capacitor element sandwiches a separator between a cathode and an anode, arranged inside a container comprising a lid and a concave shaped containing portion. On the inner bottom face in the containing portion, an insulating layer having a first conductive layer connected to a connecting terminal, and an opening portion penetrates to the first conductive layer are formed, wherein a second conductive layer fills inside the opening portion. Onto the insulating layer and the second conductive layer, a third conductive layer which laminates a first layer comprised of aluminum and a second layer comprised of carbon, is formed and connected to the cathode. The fourth conductive layer is connected to the anode, and also connected to the connecting terminal.

Electric double layer capacitor

A precursor is made from a plurality of materials having different vapor pressures. The precursor and a source material are placed in a closed heat treatment furnace. The source material is materials which are the same as some of the materials contained in the precursor and having particular vapor pressures. The precursor and source material is thermally treated in the furnace while the source material is being supplied, so the particular materials in the precursor have their evaporation suppressed, thereby forming compounds. The compounds may be oxide superconductors, oxide dielectric, and so on.

Method for producing mixed metal oxide compounds

A substrate is set in a reaction chamber, to heat the substrate to a predetermined temperature. Tl, Ba, Ca, Cu and O are supplied to the substrate by a Tl evaporation source and a target, to cause a TlBaCaCuO film to grow on the substrate. The TlBaCaCuO film is crystallized for each formation of each of its blocks each having a layered structure. In an incomplete block which is being formed, the amount of evaporation of Tl by the heating is large, so that the amount of evaporation of Tl varies depending on the ratio of an uncrystallized region on its surface. In a complete block after the formation, the amount of evaporation of Tl by the heating is small, and is approximately constant. Film growth is stopped for a predetermined time period for each formation of the block, to control the amount of supply of Tl depending on the forming step of the block.

Method of fabricating Tl or Hg-containing oxide superconductor film

An ion beam is irradiated to an oxide superconducting thin film formed on a substrate to disturb the crystal structure of the superconducting thin film and thus forming a damaged layer. The damaged layer has higher solubility in a halogen solution has a faster etching rate than other portions. Then, the superconducting thin film is etched by using a halogen solution to remove the damaged layer and form a groove at that portion. As a result, a groove of a desired form can be provided efficiently.

Method for processing superconducting thin films

A method of forming a fine groove on a superconducting thin film. A superconducting oxide thin film is formed on a MgO substrate, and a damaged layer is formed thereon by irradiating the superconducting thin film with focused ion beams to such a degree that not sputter is generated and the crystalline structure of the superconducting thin film is disturbed. The damaged layer is then removed by treatment with a strong alkali such as KOH. Thus, a fine groove is effectively formed. By inserting an oxide layer between the substrate and the superconducting thin film, a Josephson junction device suitable for superconducting transistors is produced.

Method of forming patterned oxide superconducting films and Josephson

The superconducting device according to the present invention is provided with a superconducting thin film of the Tl-Ba-Ca-Cu oxide deposited on a substrate thereof. Consequently, the device can be produced at a low cost because no rare earth elements are required. The superconducting thin film according to the present invention is formed by sputtering on substrate from a Tl-Ba-Ca-Cu oxide target by means of the sputtering method, followed by annealing in an oxidizing atmosphere. In this way, according to the present invention, it is possible to produce a superconducting thin film of the Tl-Ba-Ca-Cu oxide in a simple way by using an ordinary sputtering apparatus.

Superconducting device and method of producing superconducting thin film

The present invention relates to a superconducting material that is, substances having compositions expressed by empirical formulae Y.sub.1-x Ba.sub.x CuO.sub.3, YBa.sub.2 Cu.sub.3 O.sub.7 and LnBa.sub.2 Cu.sub.3 O.sub.7 and critical temperatures of 90 K. or more, and to a method of producing the same in which for example Y.sub.2 O.sub.3, BaCO.sub.3 and CuO are blended at a mixture molar ratio of 1:2:6 and the resulting mixture is molded under pressure followed by slowly cooling in an oxidizing atmosphere.

Growing community of inventors

Kyoto, Japan

Masaaki Nemoto