Toshiba Ceramics Co., Ltd.

Toyota Jidosha Kabushiki Kaisha

Tokyo Shibaura Denki Kabushiki Kaisha

Masaaki Mori

Norihira Takai

Hiroshi Inoue

Akihiko Tsuge

Katsutoshi Komeya

Hiroyuki Enoki

Tatsuro Kimura

Takeo Sakaigaichi

Minoru Tanaka

Tetsuro Urakawa

Michiko Hayano

Tamotu Ogawa

Kazunari Koide

Yusuke Ueta

Makoto Umeda

Taichiro Hattori

Katsuki Adachi

Yusuke Tarumoto

This invention is intended to evaluate smut resistance with higher accuracy using a marker associated with sugarcane smut resistance, which consists of a continuous nucleic acid region existing in a region between the nucleotide sequence as shown in SEQ ID NO: 1 and the nucleotide sequence as shown in SEQ ID NO: 6, a region between the nucleotide sequence as shown in SEQ ID NO: 135 and the nucleotide sequence as shown in SEQ ID NO: 143, or a region between the nucleotide sequence as shown in SEQ ID NO: 144 or 145 and the nucleotide sequence as shown in SEQ ID NO: 151 of a sugarcane chromosome.

Marker associated with smut resistance in plant belonging to genusand use thereof

A method for producing alkane and a recombinant microorganism with good alkane productivity in a reaction system for synthesizing alkane by alkane synthase activity are provided. Alkane productivity is significantly improved in a system for synthesizing alkane by alkane synthase in the presence of ferredoxin. Specifically, the method for producing alkane according to the present invention comprises synthesizing alkane by alkane synthase in the presence of ferredoxin.

Method for producing alkane and recombinant microorganism capable of synthesizing alkane

Disclosed is a process for preparing silicon nitride powder, which comprises baking a powdery mixture comprising (i) 1 part by weight of silica powder, or a silica-containing substance in terms of silica, (ii) 0.4 to 4 parts by weight of carbon powder, or a substance generating carbon by baking, in terms of carbon and (iii) 0.005 to 1 part by weight of silicon nitride powder synthesized by a silica reduction method, at a temperature of from 1350.degree. to 1550.degree. C. in a non-oxidative atmosphere containing nitrogen.

Process for preparing silicon nitride powder

This invention provides a method for manufacturing said sintered body, comprising preparing a starting material by adding 10 to 1,000 wt. parts of metal silicon powder to 100 wt. parts of mixed powder composed of 20 to 80 wt. % silica powder and 80 to 20 wt. % aluminium powder and mixing said powders thoroughly, further adding, if required, a refractory fine powder of alumina, silicon nitride, aluminium nitride, .beta.'-sialon, aluminium nitride polytype sialon, or silicon carbide, molding the resultant mixture into a green compact, and then sintering said green compact in a nitrogeneous nonoxidative gas atmosphere at a temperature of 1,200.degree. to 1,550.degree. C. This invention further provides a compact sintered body which will be prepared by the above mentioned method.

.beta.'-Sialon sintered body and a method for manufacturing the same

A process for preparing silicon nitride powder having a high .alpha.-phase content which comprises the steps of (a) providing a blended powder material composed of silica powder and amorphous carbon powder having an oil absorption of not less than 100 ml/100g, the weight ratio of the carbon powder to the silica powder being not less than 0.5, and then (b) nitriding and burning the blended powder material by heating in at a temperature of from 1300.degree. to 1700.degree. C while feeding a nitrogen-containing, non-oxidizing gas. The product obtained by this process is suitable as a raw material for the manufacture of high-density and high-strength sintered articles of silicon nitride.

Process for preparing silicon nitride powder having a high .alpha.-phase

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Okazaki, Japan

Masaaki Mori