Rohm Co., Ltd.

Tanabe Seiyaku Company, Limited

Masaaki Matsuo

Kenji Hayashi

Soichiro Takahashi

Akihiro Suzaki

Takumi Kanda

Yoshihisa Tsukamoto

Makoto Ikenaga

Ryuta Watanabe

Yoshitoki Inami

Kaito Inoue

Masashi Hayashiguchi

Akihiro Kimura

Kotaro Shibata

Hiroshi Wada

Kazuhiro Ishii

Mikio Matsumoto

Nobuchika Tsumagari

A semiconductor device includes first semiconductor elements, a control terminal, a first conductive member, and first circuit components. The first semiconductor elements are connected in parallel, and a switching operation of each first semiconductor element is controlled according to a first drive signal inputted to a third electrode of each first semiconductor element. The first conductive member is electrically connected to the control terminal to which the first drive signal is inputted, and is electrically interposed between the third electrodes. The first conductive member includes connecting members and a portion of a signal wiring section. Each of the first circuit components increases an impedance in a first frequency band. The first frequency band includes a resonance frequency of a resonance circuit that is formed by including a parasitic inductance of the first conductive member. The third electrodes of the first semiconductor elements are electrically connected to each other via at least one of the first circuit components.

Semiconductor device

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements.

Semiconductor device Aincludes: semiconductor elementturning on and off connection between drain electrodeand source electrode; semiconductor elementturning on and off connection between drain electrodeand source electrode; metal componentwith semiconductor elementmounted; metal componentwith semiconductor elementmounted; and conductive substrateincluding wiring layerswith insulating layerbetween them. Wiring layerincludes power terminal sectionconnected to drain electrode. Wiring layerincludes power terminal sectionconnected to source electrode. Power terminal sectionsand insulating layeroverlap with each other as viewed in z direction. Conductive substratesurrounds semiconductor elementsas viewed in z direction, while overlapping with a portion between metal componentsas viewed in z direction.

Semiconductor module

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

The disclosure provides a semiconductor device. The device includes first and second substrates, first mounting layers, second mounting layers, power supply terminals, an output terminal, electroconductive coupling members and switching elements. The first substrate has first obverse and reverse surfaces facing in a thickness direction. The second substrate has a second obverse surface facing as the first obverse surface faces in the thickness direction and a second reverse surface facing away from the second obverse surface. The second substrate is spaced from the first substrate in a first direction crossing the thickness direction. The first mounting layers are electrically conductive and disposed on the first obverse surface. The second mounting layers are electrically conductive and disposed on the second obverse surface. The power supply terminals are electrically connected to the first mounting layers. The output terminal is connected to one of the second mounting layers. The electroconductive coupling members are connected to the first and second mounting layers. The switching elements are mounted on the first and second mounting layers. Each of the electroconductive coupling members has strip sections and a connecting section. The strip sections extend in the first direction and are spaced in a second direction crossing the thickness direction and the first direction. The connecting section extends in the second direction to interconnect the strip sections. The strip sections are connected at one end to the first mounting layer and connected at another end to the second mounting layer.

A naphthalene derivative of the formula: ##STR1## wherein R.sup.1 is hydrogen and R.sup.2 is lower alkyl or phenyl-lower alkyl; or R.sup.1 and R.sup.2 are combined together to form lower alkylene; X is halogen; and the absolute configuration at the asymmetric carbon atom shown by the asterisk is either (S)- or (R)-configuration, and a method of preparation thereof are disclosed. Said naphthalene derivative is useful as a chiral reagent for determining the optical purity of an optically active compound containing within its molecule at least one functional group selected from hydroxy, amino and imino groups.

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Kyoto, Japan

Masaaki Matsuo