Hitachi, Ltd.

Hitachi Automotive Engineering Co., Ltd.

Masaaki Kusano

Ichiro Ohhinata

Shinzi Okuhara

Masao Yano

Toshiki P Tanaka

Seiichi Onoda

Junichi Shimizu

Toshiaki Kaminaga

Kenichi Katagishi

Ichiro Ikushima

Yasumasa Koakutsu

Tamio Takeuchi

Kiyohide Miyake

Kazuya Yuzawa

Takenari Yoshida

Syouji Yamada

The present invention relates to a device for optically monitoring or detecting information regarding a moving object by using optical fibers. The object of the invention is to prevent output characteristics from deteriorating with the passage of time. This deterioration is caused by the fact that a resin-made holder of a detecting section is deformed or a position in which the holder is installed shifts particularly because of heat and vibrations. An intermediate member is disposed between the holder and a fixing member. The holder is secured to the intermediate member which is used as a member for absorbing heat and vibrations.

Optical fiber type device for monitoring a moving object to detect a

In a device for coupling optically a light source with an optical transmission path, the present invention interposes an optical transmission path structure at the center of the distance between them in order to improve the optical coupling efficiency. The optical transmission path structure consists of a plurality of light transmitting elements arranged so that the light from the light source is received by the structure as incident light and is sent out therefrom as outgoing light at an outgoing angle which is equal to the angle of incidence. The light transmitting elements are arranged in parallel with the optical path of the light emitted from the light source and according to this arrangement, the system of the present device becomes equivalent to a system in which the positions of the light source are located at points of .+-.l.sub.1 from the light outgoing surface of the optical transmission path structure. When used with an optical fiber, the optical transmission path structure is disposed such that the distance from the light source to one end face of the optical transmission path structure is the same as the distance from the end face of the means for transmitting to the other end face of the optical transmission path structure.

Optical transmission device

In a semiconductor speech path at least a crosspoint element for forming a unitary matrix is formed on a semiconductor chip. The interconnections between the crosspoint elements and the matrix wirings are made on a ceramic wiring plate. By mounting a plurality of semiconductor chips on the ceramic wiring plate by face-down bonding, unitary matrix arrays are formed and at the same time the whole of a matrix array is formed. A row wiring having first speech path wirings and first selection wirings and a column wiring having second speech path wirings and second selection path wirings are doubly layered on the semiconductor wiring plate, with the intervention of an insulating layer therebetween. The upper layer, except for a pedestal region, is covered with a ceramic insulating layer. Terminals for row and column wirings are arranged in dual-in-line fashion. The speech path terminals of each of the row and column wirings are symmetrically and oppositely disposed to each other. This is correspondingly applied for the selection path terminals. With such a construction, the need for the multi-layered wiring on the semiconductor chip is eliminated, and the manufacturing of chips is simplified. Also crosstalk among the row and column wiring paths on the ceramic wiring plate is lessened and the grid wiring is facilitated.

Semiconductor speech path switch

A wiring substrate for a matrix circuit constituted by mounting a plurality of semiconductor chips in a multi-chip configuration, in which wiring conductors for interconnecting terminal electrodes of the individual chips and terminals of incoming and outgoing lines of the matrix circuit consist of first wiring conductors each for interconnecting the terminal electrodes of adjacent two chips and second wiring conductors for interconnecting the first wiring conductors at their middle portions, whereby the wiring lengths of the wiring conductors through any chips are made substantially equal to one another, thereby to establish uniform resistance among the wiring conductors for the chips with the width of the wiring conductors maintained constant.

Wiring substrate for a matrix circuit

A light-emitting diode element comprises a semiconductor wafer including a pair of a p-type semiconductor region and an n-type semiconductor region forming a pn junction, an inclined first electrode provided on at least one of the peripheral edges of the surface of one of the semiconductor regions in the semiconductor wafer, and a flat second electrode provided on the surface of the other semiconductor region. A light-emitting diode device is provided in which a plurality of such light-emitting diode elements are respectively received in a plurality of openings of a substrate having a first wiring conductor group and a second wiring conductor group electrically connected to the first and second electrodes respectively of the light-emitting diode elements by a low-melting metal. Thus, these light-emitting diode elements can be mounted on the single substrate in a high package density, and the light-emitting diode device of simple construction can be easily assembled.

Light-emitting diode element and device

Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions electrically separated by a polycrystalline semiconductor and dielectric insulation films, and circuit elements formed in the monocrystalline regions, wherein the polycrystalline substrate includes a high resistivity layer and a low resistivity layer, at least the high resistivity layer is adjacent to the monocrystalline region and the low resistivity region is coupled to a contact provided on a surface of the chip, whereby an electrostatic coupling between the circuit elements is shielded by the low resistivity layer to prevent cross-talks due to the electrostatic coupling. A method of manufacturing the same is also disclosed.

Semiconductor integrated circuits and method of manufacturing the same

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Yokohama, Japan

Masaaki Kusano