Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Masaaki Koizuka

Masahiro Fukuda

Yosuke Shimamune

Katsuaki Ookoshi

Akito Hara

A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.

Selective epitaxial growth method using halogen containing gate sidewall mask

Semiconductor device fabricated by selective epitaxial growth method

The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generate thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.

Low hydrogen-content silicon crystal with few micro-defects caused from

The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generated thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.

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Kawasaki, Japan

Masaaki Koizuka