Fujitsu Corporation

Masaaki Ichikawa

Yukio Hosoda

Takuya Watanabe

Fumitake Mieno

Takayuki Ohba

Mamoru Maeda

Atsuhiro Tsukune

Yoshimi Shioya

Shin-ichi Inoue

Yasushi Oyama

Akira Tabuchi

Norihisa Tsuzuki

Yasuo Uo-ochi

A semiconductor device comprises a plurality of wiring formed on a lower insulating film to be spaced apart from each other, dummy patterns formed on the lower insulating layer between the plurality of wiring and spaced apart from each other, and an upper insulating layer formed to cover the plurality of wiring and the dummy patterns and having therein cavities formed in regions between the plurality of wiring and the dummy patterns.

Method of manufacturing a semiconductor device having dummy patterns and

A semiconductor device comprises a plurality of wiring formed on a lower insulating film to be spaced apart from each other, dummy patterns formed on the lower insulating layer between the plurality of wiring and spaced apart from each other, and an upper insulating layer formed to cover the plurality of wiring and the dummy patterns and having cavities formed in regions between the plurality of wiring and the dummy patterns.

Semiconductor device having dummy patterns and an upper insulating layer

A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface. Aluminum film is deposited on the flat surface and patterned by lithography. The flat aluminum deposition allows fabrication of accurate and reliable wirings and facilitates production of VLSI of sub-micron order.

Method of selectively depositing tungsten upon a semiconductor substrate

Growing community of inventors

Kawasaki, Japan

Masaaki Ichikawa