University of Virginia Patent Foundation

Marzieh Lenjani

Kevin Skadron

Mircea R Stan

Lingxi Wu

Patricia Gonzalez

Abdolrasoul Sharifi

An integrated circuit memory device can include a plurality of banks of memory, each of the banks of memory including a first pair of sub-arrays comprising first and second sub-arrays, the first pair of sub-arrays configured to store data in memory cells of the first pair of sub-arrays, a first row buffer memory circuit located in the integrated circuit memory device adjacent to the first pair of sub-arrays and configured to store first row data received from the first pair of sub-arrays and configured to transfer the row data into and/or out of the first row buffer memory circuit, and a first sub-array level processor circuit in the integrated circuit memory device adjacent to the first pair of sub-arrays and operatively coupled to the first row data, wherein the first sub-array level processor circuit is configured to perform column oriented processing a sparse matrix kernel stored, at least in-part, in the first pair of sub-arrays, with input vector values stored, at least in part, in the first pair of sub-arrays to provide output vector values representing products of values stored in columns of the sparse matrix kernel with the input vector values.

Memory devices including processing-in-memory architecture configured to provide accumulation dispatching and hybrid partitioning

Apparatus includes a plurality of memory cells (e.g., a dynamic random access memory (DRAM)) addressable as rows and columns and a plurality of matching circuits configured to be coupled to respective bit lines associated with the columns A control circuit is configured to store respective reference sequences (e.g., binary-encoded k-mer patterns) in respective ones of the columns, to sequentially provide rows of bits stored in the memory cells and bits of a query to the matching circuits, and to identify one of the reference sequences as corresponding to the query responsive to comparisons by the matching circuits.

Scalable in situ DRAM-based accelerators and methods of operating the same

A method of processing data in a memory can include accessing an array of memory cells located on a semiconductor memory die to provide a row of data including n bits, latching the n bits in one or more row buffer circuits adjacent to the array of memory cells on the semiconductor memory die to provide latched n bits operatively coupled to a column address selection circuit on the semiconductor memory die to provide a portion of the n latched bits as data output from the semiconductor memory die responsive to a memory read operation, and serially transferring the latched n bits in the row buffer circuit to an arithmetic logic unit (ALU) circuit located adjacent to the row buffer circuit on the semiconductor memory die.

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Charlottesville, VA, United States of America

Marzieh Lenjani