International Business Machines Corporation

Maryse Cournoyer

Kamal Kumar Sikka

Joshua M Rubin

Pascale Gagnon

Lawrence Alfred Clevenger

Charles Leon Arvin

Arvind Kumar

Paul Stephen Andry

Jon Alfred Casey

Jean Audet

Yang Liu

Mark William Kapfhammer

Dinesh Gupta

Ravi K Bonam

Steve Ostrander

Dale Curtis McHerron

Isabel De Sousa

Christian Bergeron

Valérie Anne Oberson

William John Starke

Ramachandra Divakaruni

Marc Adam Bergendahl

Vijayeshwar Das Khanna

Paul Francis Fortier

Hiroyuki Mori

Luc Gilbert Guerin

Richard D Langlois

Barnim Alexander Janta-Polczynski

Sylvain Pharand

Catherine Dufort

Steve E Whitehead

Louis-Marie Achard

Charles C Bureau

Roxan Lemire

Dishit Paresh Parekh

Francois Arguin

Nathalie Meunier

A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

Direct bonded heterogeneous integration silicon bridge

A photonic package is provided. The photonic package includes a base substrate defining an aperture, a top die and a photonic integrated circuit (PIC) die. The top die includes a body with first and second top die sections. The first top die section is connectable with the base substrate. The PIC die includes body with first and second PIC die sections. The PIC die is disposable in the aperture such that the second PIC die section is connectable with the second top die section and the first PIC die section extends beyond the second top die section and is exposed for connection to a waveguide assembly.

Photonics package with face-to-face bonding

Direct bonding heterogeneous integration packaging structures and processes include a packaging substrate with first and second opposing surfaces. A trench or a pedestal is provided in the first surface. A bridge is disposed in the trench or is adjacent the pedestal sidewall, wherein the bridge includes an upper surface coplanar with the first surface of the package substrate. At least two chips in a side by side proximal arrangement overly the bridge and the packaging substrate, wherein the bridge underlies peripheral edges of the at least two chips in the side by side proximal arrangement. The at least two chips include a plurality of electric connections that are directly coupled to corresponding electrical connections on the bridge and on the packaging substrate.

Direct bonded heterogeneous integration packaging structures

An electronic package and a method of manufacture includes a substrate having an upper surface with a trench formed in a bridge region. First pads are arranged on the upper surface of the substrate, outside of the bridge region, and a bridge is positioned in the trench. A plurality of second pads are arranged on an upper surface of the bridge. A plurality of pillars are electrically coupled to the plurality of second pads. Two or more semiconductor chips are positioned in a side-by-side proximal arrangement overlaying the bridge and the substrate. A first semiconductor chip is joined to the bridge, then a second semiconductor chip is joined to the bridge, followed by attaching the chip-bridge assembly to the substrate with the bridge positioned within the substrate trench. Each of the two or more semiconductor chips have first electrical connections including bumps, and second electrical connections including third pads.

Mixed under bump metallurgy (UBM) interconnect bridge structure

The present invention includes a bridge connector with one or more semiconductor layers in a bridge connector shape. The shape has one or more edges, one or more bridge connector contacts on a surface of the shape, and one or more bridge connectors. The bridge connectors run through one or more of the semiconductor layers and connect two or more of the bridge connector contacts. The bridge connector contacts are with a tolerance distance from one of the edges. In some embodiments the bridge connector is a central bridge connector that connects two or more chips disposed on the substrate of a multi-chip module (MCM). The chips have chip contacts that are on an interior corner of the chip. The interior corners face one another. The central bridge connector overlaps the interior corners so that each of one or more of the bridge contacts is in electrical contact with each of one or more of the chip contacts. In some embodiments, overlap is minimized to permit more access to the surface of the chips. Arrays of MCMs and methods of making bridge connects are disclosed. Bridge connector shapes include: rectangular, window pane, plus-shaped, circular shaped, and polygonal-shaped.

Multiple chip bridge connector

A package and system for high-density chip-to-chip interconnection is provided. Embodiments of the present invention utilizes a plurality of circuit dies including a laminate substrate adjacent to the plurality of circuit dies. It also includes a conductive spacer disposed between the laminate substrate and one of the plurality of circuit dies, a silicon bridge and a conductive interposer disposed between the laminate substrate and the plurality of dies and adjacent to the conductive spacer. Furthermore the embodiment of this present invention can include a top layer of a printed circuit board (PCB) coupled with a bottom layer of the laminate substrate. The conductive spacer comprises, at least of, a laminate, organic or copper material.

High-density chip-to-chip interconnection with silicon bridge

Growing community of inventors

Granby, Canada

Maryse Cournoyer